Publications

• Communication dans un congrès

A Digital Delay Line with Coarse/Fine tuning through Gate/Body biasing in 28nm FDSOI

Ilias Sourikopoulos, Antoine Frappé, Andreia Cathelin, Laurent Clavier, Andreas Kaiser

This paper discusses the design and characterization of a programmable digital delay line. The core of the proposed architecture is a thyristor-type delay element featuring the capability for coarse/fine tuning without using any additional hardware. This is made possible by taking advantage of body…

46th European Solid-State Device Research Conference (ESSDERC) / 42nd European Solid-State Circuits Conference (ESSCIRC), Sep 2016, Lausanne, Switzerland. pp.145-148, ⟨10.1109/ESSCIRC.2016.7598263⟩. ⟨hal-03270099⟩

• Communication dans un congrès

Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs

Hector Sanchez-Martin, Oscar Garcia-Perez, Ignacio Íñiguez-De-La-Torre, Susana Perez, Tomás González, Javier Mateos, Philippe Altuntas, N. Defrance, Marie Lesecq, Virginie Hoel, Yvon Cordier, Stephanie Rennesson

The performance of GaN transistors is still limited by physical and fabrication problems, mainly related to different kinds of traps. In this work, virgin transistors reveals strong low frequency dispersion both in the transconductance and output conductance, that we attribute to the presence of…

11th European Microwave Integrated Circuits Conference (EuMIC), Oct 2016, London, United Kingdom. paper EuMIC10-03, 153-156, ⟨10.1109/EuMIC.2016.7777513⟩. ⟨hal-03270103⟩

• Article dans une revue

Magnetic-Phase Dependence of the Spin Carrier Mean Free Path in Graphene Nanoribbons

Jing Li, Yann-Michel Niquet, Christophe Delerue

We show theoretically that the intrinsic (phonon-limited) carrier mobility in graphene nanoribbons is considerably influenced by the presence of spin-polarized edge states. When the coupling between opposite edges switches from antiferromagnetic to ferromagnetic with increasing carrier density, the…

Physical Review Letters, 2016, 116 (23), pp.236602. ⟨10.1103/PhysRevLett.116.236602⟩. ⟨cea-01849844⟩

• Article dans une revue

METASTABILITY OF FINITE STATE MARKOV CHAINS: A RECURSIVE PROCEDURE TO IDENTIFY SLOW VARIABLES FOR MODEL REDUCTION

Claudio Landim, T. Xu

Consider a sequence (η N (t) : t ≥ 0) of continuous-time, irreducible Markov chains evolving on a fixed finite set E. Denote by R N (η, ξ) the jump rates of the Markov chain η N t , and assume that for any pair of bonds (η, ξ),

ALEA : Latin American Journal of Probability and Mathematical Statistics, 2016. ⟨hal-01728594⟩

• Communication dans un congrès

Bulk acoustic wave transformer employing periodically polled array of piezoelectric rods

Victor Plessky, Ventsislav Yantchev, C. Granger, Anne-Christine Hladky

Multilayer bulk acoustic wave transformer employing a periodical array of piezoelectric rods with alternating polarization is experimentally demonstrated for the first time. Voltage transformation coefficient in excess of 6 was measured at a frequency of 150kHz, providing thus a solid experimental…

IEEE International Ultrasonics Symposium (IUS), Sep 2016, Tours, France. ⟨10.1109/ULTSYM.2016.7728583⟩. ⟨hal-03300124⟩

• Article dans une revue

Inverse saffman-taylor experiments with particles lead to capillarity driven fingering instabilities

Ilyesse Bihi, Michael Baudoin, Jason E. Butler, Christine Faille, Farzam Zoueshtiagh

Using air to displace a viscous fluid contained in a Hele-Shaw cell can create a fingering pattern at the interface between the fluids if the capillary number exceeds a critical value. This Saffman-Taylor instability is revisited for the inverse case of a viscous fluid displacing air when partially…

Physical Review Letters, 2016, 117 (3), ⟨10.1103/PhysRevLett.117.034501⟩. ⟨hal-02636447⟩

• Article dans une revue

Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress

Hadhemi Lakhdar, Nathalie Labat, Arnaud Curutchet, N. Defrance, Marie Lesecq, J.C. Dejaeger, Nathalie Malbert

Microelectronics Reliability, 2016. ⟨hal-01718762⟩

• Communication dans un congrès

InAs/Al_0.4Ga_0.6Sb side gated vertical TFET on GaAs substrate

Vinay Chinni, Mohammed Zaknoune, X. Wallart, L. Desplanque

• Article dans une revue

Above 2000 V breakdown voltage at 600 K GaN-on-silicon high electron mobility transistors

Nicolas Herbecq, Isabelle Roch-Jeune, Astrid Linge, Malek Zegaoui, Pierre-Olivier Jeannin, Nicolas Clément, Jean-Paul Rouger, F Medjdoub

Physica Status Solidi A (applications and materials science), 2016, 213 (4), pp.873--877. ⟨10.1002/pssa.201532572⟩. ⟨hal-02277752⟩

• Communication dans un congrès

Containment nuclear plant structures evaluation by non destructive testing: strategy and results

Vincent Garnier, Jean-Marie Henault, Hamid Hafid, Jérôme Verdier, Jean François Chaix, Odile Abraham, Zoubir Medhi Sbartaï, Jean-Paul Balayssac, Bogdan Piwakowski, Géraldine Villain, Xavier Derobert, Cédric Payan, Sandrine Rakotonarivo, Éric Larose, Hognon Sogbossi, Quang Anh Vu, Martin Lott, Jean-Baptiste Legland, Olivier Durand, Radoslaw Drelich, Charles Ciccarone

Containment nuclear plants structures are an ultimate barrier in the event of an accident. Mechanical resistance and tightness are the two functions that they are expected to provide. To evaluate their capacity to perform them, destructive testing cannot be used to characterize the material. Non-…

TINCE 2016 3rd Conference on Technological Innovations in Nuclear Civil Engineering, Sep 2016, Paris, France. 13p. ⟨hal-01599552⟩