Publications

Affichage de 6581 à 6590 sur 16064


  • Communication dans un congrès

[Invité] Emergence des ISFETs 0D : un nouvel outil pour la récupération d'énergie et la détection de bio-molécules uniques

Nicolas Clément

6ème Réunion Plénière du GdR Nanofils, 2014, Toulouse, France. ⟨hal-01055041⟩

  • Communication dans un congrès

Enhanced efficiency by the effect of strain on the structure of a solar cell

Abdelkader Aissat, Rachid Bestam, M. El Bey, Jean-Pierre Vilcot

This paper is expected at the study of Ga1-xInxP/GaAs based solar cell. The effects of indium concentration, lattice parameter mismatch and thickness of the SiO2 insulating layer on the characteristics and efficiency of the Ga1-xInxP/GaAs structure were investigated. We noticed that for higher…

International Conference on Technologies and Materials for Renewable Energy, Environment and Sustainability, TMREES14, 2014, Beirut, Lebanon. pp.817-823, ⟨10.1016/j.egypro.2014.06.100⟩. ⟨hal-01055040⟩

  • Communication dans un congrès

Monitoring conductance switching by light in azobenzene derivative-gold nano-particle self-assembled networks

Yannick Viero, Stéphane Lenfant, David Guérin, Dominique Vuillaume

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium M - Molecular materials - Towards quantum properties (MOLMAT-Q), 2014, Lille, France. ⟨hal-00957796⟩

  • Communication dans un congrès

Optical and microstructural properties into nanoporous GaN films grown on sapphire by metal organic chemical vapor deposition

Bandar Alshehri, S.-M. Lee, J.-H. Kang, Karim Dogheche, S.-H. Gong, S.-W. Ryu, E. Dumont, Y.-H. Cho, El Hadj Dogheche

Gallium Nitride (GaN) thin films have been prepared on sapphire by metal organic chemical vapor deposition (MOCVD) technique and a chemical etching method using KOH is used to develop nanoporous structures [1]. We present comparative investigations of porous and nonporous GaN layers. While the…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond, 2014, Lille, France. ⟨hal-00961412⟩

  • Communication dans un congrès

[Invited] Surface science of semiconductor nanowires

B. Grandidier

International Nano-Optoelectronic Workshop, iNOW 2014, 2014, St. Petersburg, Russia. ⟨hal-01044671⟩