Publications

• Article dans une revue

Effect of interface configurations on the dynamic scaling behavior of Pb(Zr0.53Ti0.47)O3 thin films

Kui Li, Nossikpendou Sama, Tao Li, Denis Remiens, Gang Du, Xianlin Dong, Genshui Wang

The ferroelectric hysteresis and the scaling relations of hysteresis area ⟨A⟩ against field amplitude E and frequency f in Pb(Zr0.53Ti0.47)O3 thin films using platinum and LaNiO3 (LNO) as both bottom and top electrodes were systematically investigated. Interestingly, it was found that the influence…

Applied Physics Letters, 2014, 104, 092904, 5 p. ⟨10.1063/1.4867506⟩. ⟨hal-00957814⟩

• Article dans une revue

Surface asymmetry of coated spherical nanoparticles

Amélie H.R. Koch, Gaëtan Lévêque, Sebastian Harms, Karmena Jaskiewicz, Max Bernhardt, Andreas Henkel, Carsten Sönnichsen, Katharina Landfester, George Fytas

We validate the nonspherical grafting arrangement of isotropically coated spherical nanoparticles as very recently proposed. We utilize localized surface plasmon resonance enhanced dynamic polarized and depolarized light scattering from Au nanoparticles, the spherical symmetry of which was revealed…

Nano Letters, 2014, 14, pp.4138-4144. ⟨10.1021/nl501783x⟩. ⟨hal-01044850⟩

• Communication dans un congrès

[Invité] Echelle nanométrique et grandes longueurs d'onde : un mariage fructueux ?

Jean-Francois Lampin

Workshop 'Les Nanos au coeur du THz et du MIR', 2014, Paris, France. ⟨hal-01044786⟩

• Article dans une revue

Young's modulus extraction of epitaxial heterostructure AlGaN/GaN for MEMS application

Achraf Ben Amar, Marc Faucher, Virginie Brandli, Yvon Cordier, Didier Theron

This paper presents a Young's modulus extraction method for thin film group III-nitrides materials such as GaN, AlN, and its ternary AlGaN. The AlGaN/GaN heterostructures are grown by molecular beam epitaxy on Si (111) substrate and designed for MEMS applications. Various cantilevers with a…

Physica Status Solidi A (applications and materials science), 2014, 211, pp.1655-1659. ⟨10.1002/pssa.201330339⟩. ⟨hal-01044844⟩

• Article dans une revue

Optical waveguiding properties into porous gallium nitride structures investigated by prism coupling technique

Bandar Alshehri, Seung-Min Lee, Jin-Ho Kang, Su-Hyun Gong, Sang-Wan Ryu, Yong-Hoon Cho, El Hadj Dogheche

In order to modulate the refractive index and the birefringence of Gallium Nitride (GaN), we have developed a chemical etching method to perform porous structures. The aim of this research is to demonstrate that optical properties of GaN can be tuned by controlling the pores density. GaN films are…

Applied Physics Letters, 2014, 105, 051906, 4 p. ⟨10.1063/1.4892528⟩. ⟨hal-01056953⟩

• Article dans une revue

Ingénierie des matériaux artificiels électromagnétiques : cristaux photoniques et métamatériaux

D. Lippens

Le développement des techniques de micro-structuration des matériaux diélectriques et des composés métalliques permet actuellement un contrôle sans précédent de l'interaction des ondes électromagnétiques avec les matériaux artificiels. Nous illustrons ici l'ingénierie de telles structures…

Photoniques, 2014, 69, pp.31-34. ⟨10.1051/photon/20146931⟩. ⟨hal-00954473⟩

• Article dans une revue

Terahertz wireless communication using GaAs transistors as detectors

L. Tohme, S. Blin, Guillaume Ducournau, P. Nouvel, D. Coquillat, S. Hisatake, T. Nagatsuma, A. Pénarier, L. Varani, W. Knap, Jean-Francois Lampin

The detection of high data-rate wireless communication using a terahertz- frequency carrier, and a GaAs transistor as a detector, is reported. Communications are investigated around 0.2 and 0.3087 THz. For the first time, an error-free transmission at data rates up to 8.2 Gbit/s is demonstrated,…

Electronics Letters, 2014, 50, pp.323-325. ⟨10.1049/el.2013.3702⟩. ⟨hal-00954475⟩

• Article dans une revue

Epitaxial Bi2Sr2Co2Oy thin films as a promising p-type transparent conducting oxides

Shufang Wang, Liqing Sun, Hongrui Zhang, El Hadj Dogheche, Jianglong Wang, Guangsheng Fu

Transparent conductive p-type Bi2Sr2Co2Oy thin films were epitaxial grown on LaAlO3 substrate by pulsed laser deposition. Film with thickness of 50 nm showed a room temperature resistivity of about 5.5 mΩ cm and an average optical transmittance of about 51% in the visible region, resulting in a…

Optical Materials Express, 2014, 4 (10), pp. 2209-2214. ⟨hal-03682662⟩

• Communication dans un congrès

Organic synapstor for unconventional computing and biocompatible applications

Dominique Vuillaume

21st Korean Conference on Semiconductors, KCS 2014, International Symposium on Next Generation Terabit Memory Technology, 2014, Seoul, South Korea. ⟨hal-00957813⟩

• Communication dans un congrès

Effects of deposition parameters on the composition of Cu(In,Ga)Se2 thin films deposited by magnetron pulsed DC sputtering

Thomas Aviles, Jean-Pierre Vilcot

Industrial Cu(In,Ga)Se2 (CIGS) thin films formation process generally require two steps : 1) Cu-In-Ga precursors deposition 2) crystallization under selenium atmosphere (H2Se). Unfortunately, hydrogen selenide is very hazardous, being the most toxic selenium compound. Nevertheless, recent works…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium A - Thin film chalcogenide photovoltaic materials, 2014, Lille, France. ⟨hal-00964159⟩