Publications

Affichage de 6731 à 6740 sur 16179


  • Communication dans un congrès

Distributional upper bound on the interference in spatial wireless multiuser ultrawideband communication systems

Gareth W. Peters, Ido Nevat, Laurent Clavier, François Septier

We develop a novel distributional upper bound on the interference created in an ultra-wideband wireless communication systems under two general assumptions: the first is that there is an unknown number of interferers who are distributed according to a homogeneous Poisson point process randomly in…

IEEE International Conference on Acoustics, Speech, and Signal Processing, ICASSP 2014, 2014, Florence, Italy. pp.5764-5768, ⟨10.1109/ICASSP.2014.6854708⟩. ⟨hal-01056963⟩

  • Article dans une revue

[Invited] Ultrathin barrier GaN-on-silicon devices for millimeter wave applications

F Medjdoub

Microelectronics Reliability, 2014, 54, pp.1-12. ⟨10.1016/j.microrel.2013.11.009⟩. ⟨hal-00923934⟩

  • Communication dans un congrès

Electro-optic and converse piezoelectric coefficients of epitaxial thin films : GaN grown on Si, and (Sr,Ba)Nb2O6 (SBN) grown on Pt coated MgO (poster)

Mireille Cuniot-Ponsard, Irma Saraswati, Suk-Min Ko, Mathieu Halbwax, Yong-Hoon Cho, El Hadj Dogheche

We report the first measurement of the (r13, r33) Pockels electro-optic coefficients in a SBN thin film and in a GaN thin film grown on silicon. The converse-piezoelectric and electro-absorptive coefficients are simultaneously determined.

Conference on Lasers and Electro-Optics, CLEO 2014, Laser Science to Photonic Applications, 2014, San Jose, CA, United States. ⟨hal-00975792⟩

  • Article dans une revue

1900 V, 1.6 mΩ cm2 AlN/GaN-on-Si power devices realized by local substrate removal

Nicolas Herbecq, Isabelle Roch-Jeune, Nathalie Rolland, Domenica Visalli, Joff Derluyn, Stefan Degroote, Marianne Germain, F Medjdoub

We demonstrate a high-voltage low on-resistance AlN/GaN/AlGaN double heterostructure grown by metal-organic chemical vapor deposition on a silicon (111) substrate using a total buffer thickness of less than 2 μm. A fully scalable local substrate removal technique was developed to dramatically…

Japanese Journal of Applied Physics, part 2 : Letters, 2014, 7 (3), 034103, 3 p. ⟨10.7567/APEX.7.034103⟩. ⟨hal-00950148⟩

  • Communication dans un congrès

[Invited] High frequency electronic devices : impact of beyond graphene materials

Henri Happy, D. Mele, Ivy Colambo, Mohamed Salah Khenissa, Mohamed Moez Belhaj, Emiliano Pallecchi, Abdelkarim Ouerghi, Dominique Vignaud, Gilles Dambrine

Considering graphene field effect transistors (GFETs), considerable efforts have been made during the recent years to reach impressive current gain cut-off frequency (ft) over 400 GHz. Unfortunately, for these devices, the maximum frequency of oscillation (fmax) remains under 100GHz. This deviation…

62nd IEEE MTT-S International Microwave Symposium, IMS 2014, Workshop WFK - Beyond Graphene Electronic Devices and their Potential for High-Frequency Applications, 2014, Tampa, FL, United States. ⟨hal-01044773⟩

  • Communication dans un congrès

[Invited] Surface science of semiconductor nanowires

B. Grandidier

International Nano-Optoelectronic Workshop, iNOW 2014, 2014, St. Petersburg, Russia. ⟨hal-01044671⟩