Publications

Affichage de 6771 à 6780 sur 16231


  • Article dans une revue

On the effect of δ-doping in self-switching diodes

Andreas Westlund, Ignacio Iñiguez-De-La-Torre, Per-Åke Nilsson, Tomas González, Javier Mateos, Paul Sangaré, Guillaume Ducournau, Christophe Gaquière, L. Desplanque, Xavier Wallart, Jan Grahn

Lowering the carrier concentration is presented as a way to considerably improve the performance of self-switching diode (SSD) detectors. A physics-based theoretical model was used to derive an expression for the responsivity of SSDs as a function of carrier concentration, mobility, and design…

Applied Physics Letters, 2014, 105 (9), 093505, 5 p. ⟨10.1063/1.4894806⟩. ⟨hal-01061584⟩

  • Article dans une revue

Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

J.F. Millithaler, I. Iniguez-De-La-Torre, A. Iniguez-De-La-Torre, T. Gonz Alez, P. Sangaré, Guillaume Ducournau, Christophe Gaquière, J. Mateos

In this work, recent advances in the design of GaN planar Gunn diodes with asymmetric shape, socalled self-switching diodes, are presented. A particular geometry for the nanodiode is proposed, referred as V-shape, where the width of the channel is intentionally increased as approaching the anode.…

Applied Physics Letters, 2014, 104, 073509, 4 p. ⟨10.1063/1.4866166⟩. ⟨hal-00951554⟩

  • Communication dans un congrès

Current-voltage characteristics of (Mo/Au)/AlGaN/GaN/Si Schottky diodes

H. Mosbahi, M. Charfeddine, M. Gassoumi, Christophe Gaquière, M.A. Zaidi, H. Maaref

The AlGaN/GaN high electron mobility transistors (HEMTs) is a promising candidate for microwave applications due to its high power and high temperature. owing to their large and direct band gap, as well as favorable transport properties. Moreover, III-V nitrides could be suitable for the emitters…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments, 2014, Lille, France. ⟨hal-00961393⟩

  • Communication dans un congrès

200 GHz coherent wireless link using photonics-based emission

Guillaume Ducournau, Y. Yoshimizu, S. Hisatake, F. Pavanello, Emilien Peytavit, Mohammed Zaknoune, T. Nagatsuma, Jean-Francois Lampin

We investigated a coherent THz link at 200 GHz, with variable data rate up to 11 Gbit/s, featuring the combination of a quasi-optic UTC-PD emitter and a high sensitivity electronic receiver. This coherent link relies on an optical frequency comb generator at emission to produce an optical beat note…

39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), Sep 2014, Tucson, United States. ⟨10.1109/IRMMW-THz.2014.6956001⟩. ⟨hal-03286172⟩

  • Communication dans un congrès

Fabrication of integrated micrometer platform for thermoelectric measurements

Maciej Haras, V. Lacatena, François Morini, J.F. Robillard, S. Monfray, T. Skotnicki, Emmanuel Dubois

60th Annual IEEE International Electron Devices Meeting (IEDM), Dec 2014, San Francisco, United States. paper 8.5, 8.5.1-8.5.4, ⟨10.1109/IEDM.2014.7047012⟩. ⟨hal-03325009⟩

  • Communication dans un congrès

Deformation of droplets with magnetic nanoparticles in a rotating magnetic field

Sergey S. Koshelyuk, Yu V. Pylnov, Vladimir L. Preobrazhensky, Philippe Pernod

This paper investigates the change in contact angle of droplets of fluid containing dispersed nanoparticles (nanofluid) stabilized in oleic acid and ethanol placed in a rotating magnetic field. Paramagnetic nanoparticles with an average size 100 nm were injected into the droplets and situated on…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01020263⟩