Publications

• Article dans une revue

Bragg band gaps tunability in an homogeneous piezoelectric rod with periodic electrical boundary conditions

Sébastien Degraeve, Christian Granger, Bertrand Dubus, Jerome O. Vasseur, Mai Pham Thi, Anne-Christine Hladky

An homogeneous piezoelectric rod is shown to exhibit Bragg band gaps when an electrical boundary condition is applied periodically with the help of metallic electrodes. An analytical model is developed which formulation depends on the applied electric boundary condition and reveals that Bragg band…

Journal of Applied Physics, 2014, 115, 194508, 8 p. ⟨10.1063/1.4876757⟩. ⟨hal-00995265⟩

• Article dans une revue

From 'petal effect' to 'lotus effect' on the highly flexible Silastic S elastomer microstructured using a fluorine based reactive ion etching process

Christophe Frankiewicz, Farzam Zoueshtiagh, Abdelkrim Talbi, Jeremy Streque, Philippe Pernod, Alain Merlen

A fluorine-based reactive ion etching (RIE) process has been applied on a new family of silicone elastomers named 'Silastic S' for the first time. Excellent mechanical properties are the principal advantage of this elastomer. The main objective of this study was (i) to develop a new…

Journal of Micromechanics and Microengineering, 2014, 24 (11), ⟨10.1088/0960-1317/24/11/115008⟩. ⟨hal-03277849⟩

• Article dans une revue

[Review] Generation of transversal envelope soliton in polymeric and wooden rods

M. de Billy, Anne-Christine Hladky

This paper is concerned with the probing of the transversal envelope solitons propagation in circular waveguides when a set of requirements (non-linearity and dispersion) are fulfilled in the waveguide and balanced. The basic idea is to analyze the shape of an acoustic pulse after it has traveled…

Ultrasonics, 2014, 54, pp.1281-1288. ⟨10.1016/j.ultras.2014.01.016⟩. ⟨hal-00969120⟩

• Communication dans un congrès

Interfacial strength of InP/Si substructure

Éric Le Bourhis, Konstantinos Pantzas, Gilles Patriarche, Isabelle Sagnes, David Troadec, Anne Talneau

16th International Conference on Experimental Mechanics, ICEM16, 2014, Cambridge, United Kingdom. 2 p. ⟨hal-00992686⟩

• Article dans une revue

High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

Ali Soltani, Michel Rousseau, Jean-Claude Gerbedoen, Maghnia Mattalah, P.L. Bonanno, A. Telia, Nour Eddine Bourzgui, Gilles Patriarche, A. Ougazzaden, A. Ben Moussa

High performance titanium nitride sub-100 nm rectifying contact, deposited by sputtering on AlGaN/GaN high electron mobility transistors, shows a reverse leakage current as low as 38 pA/mm at VGS = -40 V and a Schottky barrier height of 0.95 eV. Based on structural characterization and 3D…

Applied Physics Letters, 2014, 104, 233506, 5 p. ⟨10.1063/1.4882415⟩. ⟨hal-01009966⟩

• Communication dans un congrès

Microwave optical switches metal-semiconductor-metal Schottky based on GaAs

Sabah Benzeghda, Farida Hobar, Didier Decoster, Jean-Francois Lampin, A. Benzeghda

Interdigitated metal-semiconductor-metal (MSM) photodetectors have received considerable attention for applications in microwave optical phoswitches. The impulse response of interdigitated metal-semiconductor- metal photoswich fabricated on GaAs non-intentional doped (NID) absorbing layer is…

International Conference on Renewable Energies and Power Quality, ICREPQ'14, 2014, Córdoba, Spain. paper 534, 5 p., ⟨10.24084/repqj12.534⟩. ⟨hal-00955226⟩

• Article dans une revue

Synthesis and electrical conductivity of multilayer silicene

Patrick Vogt, Pierre Capiod, Maxime Berthe, Andrea Resta, Paola de Padova, Thomas Brühne, Guy Le Lay, B. Grandidier

The epitaxial growth and the electrical resistance of multilayer silicene on the Ag(111) surface has been investigated. We show that the atomic structure of the first silicene layer differs from the next layers and that the adsorption of Si induces the formation of extended silicene terraces…

Applied Physics Letters, 2014, 104 (2), 021602, 5 p. ⟨10.1063/1.4861857⟩. ⟨hal-00934419⟩

• Article dans une revue

Ferroelectric thin films working at microwave frequency for reconfigurable devices on silicon substrate: performances comparison between BST, PST

Freddy Ponchel, Denis Remiens, Areski Ghalem, Tuami Lasri

The dielectric microwave performance of BST and PST films is studied via tunability. The films are deposited onto silicon wafer with high resistivity using radio frequency magnetron sputtering with an in situ process for BST films and ex situ for PST films. In order to improve the crystalline…

International Journal of Materials Engineering Innovation, 2014, 5 (4), pp.327. ⟨10.1504/IJMATEI.2014.066857⟩. ⟨hal-03525889⟩

• Communication dans un congrès

A GaN Schottky diode-based analog phase shifter MMIC

Chong Jin, Etienne Okada, Marc Faucher, Damien Ducatteau, Mohammed Zaknoune, Dimitris Pavlidis

A GaN Schottky Diode-based Analog Phase Shifter MMIC of T-topology has been designed for 35 GHz operation. An all E-Beam technology was employed for MMIC realization. The measured, as well modeled small and large-signal diode characteristics were used for evaluating the phase-shifter performance in…

9th European Microwave Integrated Circuit Conference (EuMIC), Oct 2014, Rome, Italy. pp.96-99, ⟨10.1109/EuMIC.2014.6997800⟩. ⟨hal-03286170⟩

• Article dans une revue

Experimental determination of temperature-dependent electron-electron collision frequency in isochorically heated warm dense gold

C. Fourment, F. Deneuville, D. Descamps, F. Dorchies, S. Petit, O. Peyrusse, B. Holst, V. Recoules

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 89 (16), ⟨10.1103/PhysRevB.89.161110⟩. ⟨hal-01561840⟩