Publications

Affichage de 6971 à 6980 sur 16178


  • Communication dans un congrès

1-20 GHz k Omega-range BiCMOS 55 nm Reflectometer

Pietro M. Ferreira, Cora Donche, Kamel Haddadi, Tuami Lasri, Gilles Dambrine, Christophe Gaquière, Thomas Quemerais, Daniel Gloria

Scanning microwave microscope (SMM) combines the high spatial resolution with the high-sensitivity electric measurement capabilities of a vector network analyzer (VNA). SMM has been pointed out as very well suited for nanodevices characterization. In recent publications, SMM has demonstrated high…

12th IEEE International New Circuits and Systems Conference (IEEE NEWCAS), Jun 2014, Trois-Rivieres, Canada. pp.385-388. ⟨hal-03224670⟩

  • Article dans une revue

Enhancing LSPR sensitivity of Au gratings through graphene coupling to Au film

Thomas Maurer, Rana Nicolas, Gaëtan Lévêque, P. Subramanian, Julien Proust, Jérémie Béal, Silvere Schuermans, Jean-Pierre Vilcot, Z. Herro, M. Kazan, Jerome Plain, Rabah Boukherroub, Abdellatif Akjouj, Bahram Djafari-Rouhani, Pierre-Michel Adam, Sabine Szunerits

A particular interesting plasmonic system is that of metallic nanostructures interacting with metal films. As the localized surface plasmon resonance (LSPR) behavior of gold nanostructures (Au NPs) on the top of a gold thin film is exquisitely sensitive to the spacer distance of the film-Au NPs, we…

Plasmonics, 2014, 9, pp.507-512. ⟨10.1007/s11468-013-9649-0⟩. ⟨hal-00994804⟩

  • Article dans une revue

Waves in periodic media : Fourier analysis shortcuts and physical insights, case of 2D phononic crystals

Samuel Dupont, Joseph Gazalet, Jean-Claude Kastelik

Phononic crystal is a structured media with periodic modulation of its physical properties that influences the propagation of elastic waves and leads to a peculiar behaviour, for instance the phononic band gap effect by which elastic waves cannot propagate in certain frequency ranges. The…

Journal of Physics: Conference Series, 2014, 2nd International Conference on Mathematical Modeling in Physical Sciences 2013 (IC-MSQUARE 2013) 1–5 September 2013, Prague, Czech Republic, 490 (1), pp.012120. ⟨10.1088/1742-6596/490/1/012120⟩. ⟨hal-00961500⟩

  • Article dans une revue

Back cover

S. Arscott

Lab on a Chip, 2014, 14 (19), pp.3896. ⟨10.1039/C4LC90090A⟩. ⟨hal-02345645⟩

  • Communication dans un congrès

On wafer silicon integrated noise source characterization up to 110 GHz based on germanium-on-silicon photodiode

Sandrine Oeuvrard, Jean-Francois Lampin, Guillaume Ducournau, Sylvie Lepilliet, Francois Danneville, Thomas Quemerais, Daniel Gloria

In this work, a new concept of photonic noise source has been developed and characterized, based on Germanium-on-Silicon high speed photodiode (GeHSPD). This photodiode RF output power has been preliminary characterized up to 210 GHz, using a dedicated optoelectronic bench and demonstrating…

27th IEEE International Conference on Microelectronic Test Structures, ICMTS 2014, 2014, Udine, Italy. pp.150-154, ⟨10.1109/ICMTS.2014.6841484⟩. ⟨hal-01055046⟩

  • Communication dans un congrès

Croissance localisée d'InAs par épitaxie par jets moléculaires

Maria Fahed, L. Desplanque, Xavier Wallart

Ce travail porte sur l'étude de la croissance localisée d'InAs sur InAs déposé par épitaxie par jets moléculaires (EJM). Nous présentons la caractérisation de la morphologie des surfaces par microscopie électronique à balayage (MEB).

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01018426⟩

  • Communication dans un congrès

Engineering of oxide based resistive switching for neuromorphic computing

F. Alibart, Selina La Barbera, G. Sassine, N. Najjari, Dominique Vuillaume

Journées Nationales du GdR OXYFUN " Oxydes fonctionnels : du matériau au dispositif ", 2014, Autrans, France. ⟨hal-01055005⟩

  • Communication dans un congrès

InAs based Esaki tunnel diodes

Vinay Kumar Chinni, L. Desplanque, Mohamed Zaknoune, Xavier Wallart

We present simulation results of InAs based Esaki tunnel diodes. InAs homojunction and InAs/AlGaSb heterojunction are considered and we investigate the role of source and drain doping levels as well as band energy discontinuities on the tunneling current of the device. The results are very…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01018430⟩