Publications

Affichage de 71 à 80 sur 16261


  • Brevet

Intermediate substrate for producing a substrate for a high-electron-mobility transistor

Francois Grandpierron, Farid Medjdoub, Thierry Boudet

France, Patent n° : FR3166240 (A1) 2026-03-13. 2026, pp.N° de demande : FR20240009687 20240912. ⟨hal-05655725⟩

  • Brevet

Intermediate substrate for producing a substrate for a high-electron-mobility transistor

Francois Grandpierron, Farid Medjdoub, Thierry Boudet

France, Patent n° : FR3166240 (A1) 2026-03-13. 2026, pp.N° de demande : FR20240009687 20240912. ⟨hal-05659564⟩

  • Article dans une revue

Is All Lithium Created Equal? Effects of Processing Conditions on Lithium Microstructure and Battery Performance

Wan-Yu Tsai, Ethan Self, Yan-Ru Lin, Till Fuchs, Kyra Owensby, Christian Lerch, Sinje Burberg, Katie Browning, Erik Herbert, Xi Chelsea Chen, Jürgen Janek, Andrew Westover

Despite growing interest in rechargeable lithium metal batteries, the influence of anode microstructure on battery performance is often overlooked, largely due to lithium’s air sensitivity and low atomic number (Z = 3), which makes it difficult to apply standard characterization methods such as…

ACS Applied Materials & Interfaces, 2026, 18 (11), pp.16338-16349. ⟨10.1021/acsami.5c22180⟩. ⟨hal-05619924⟩

  • Pré-publication, Document de travail

Bottom gated in-plane InSb nanostructures on GaAs(111)B grown by selective area epitaxy

Clément Barbot, Christophe Coinon, Maxime Berthe, Yves Deblock, Qianqian Lan, Etienne Okada, L. Thomas, Pierre Capiod, Coline Demoncheaux, Rafal E Dunin-Borkowski, Philipp Ebert, Bruno Grandidier, Ludovic Desplanque

This work presents a method of achieving high-quality in-plane InSb nanowires on a highly mismatched GaAs (111)B substrate through the combination of atomic hydrogen-assisted selective area molecular beam epitaxy and extreme Sb-rich conditions. By inserting an InGaP barrier layer on top of the…

2026. ⟨hal-05547559⟩

  • Article dans une revue

Enhanced Thermoelectric Performance in Li-Intercalated PdPS

Weng Hou Yip, Chan How Oh, See Wee Koh, Qundong Fu, Xingli Wang, Ruihuan Duan, Philippe Coquet, Jing Wu, Mohamed Boutchich, Beng Kang Tay

ACS Applied Materials & Interfaces, 2026, 18 (11), pp.16316-16323. ⟨10.1021/acsami.5c21695⟩. ⟨hal-05575428⟩