Publications

• Article dans une revue

Novel heterostructured Ge nanowires based on polytype transformation

Laetitia Vincent, Gilles Patriarche, Géraldine Hallais, Charles Renard, Cyrille Gardès, David Troadec, Daniel Bouchier

We report on a strain-induced phase transformation in Ge nanowires under external shear stresses. The resulted polytype heterostructure may have great potential for photonics and thermoelectric applications. ⟨111⟩-oriented Ge nanowires with standard diamond structure (3C) undergo a phase…

Nano Letters, 2014, 14, pp.4828-4836. ⟨10.1021/nl502049a⟩. ⟨hal-01058064⟩

• Communication dans un congrès

InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate

L. Desplanque, Xianglei Han, Maria Fahed, Vinay K. Chinni, David Troadec, M.-P. Chauvat, Pierre Ruterana, Xavier Wallart

We report on the realization of AlGaSb/InAs Esaki tunnel diodes on GaSb (001) substrate. Selective area molecular beam epitaxy of InAs is used to define the area of the diodes down to submicron dimensions. A peak current density up to 1.3 MA/cm2 is achieved.

26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Compound Semiconductor Week, CSW 2014, 2014, Montpellier, France. paper Mo-C1-6, 2 p., ⟨10.1109/ICIPRM.2014.6880530⟩. ⟨hal-01059835⟩

• Communication dans un congrès

Direct path detection algorithm in multiple input single output configuration for transport applications

Kobenan Ignace Kossonou, Yassin El Hillali, Michael Bocquet, Atika Rivenq, Jamal Assaad

This paper introduces a novel technique that exploits cross-correlation properties of near-orthogonal pseudonoise (PN) codes to estimate the time of arrival of the direct path signal for Multiple Input Single Output (MISO) applications. Indeed, multipath are a source of error in the time…

2014 IEEE International Conference on Ultra-WideBand, ICUWB 2014, Sep 2014, Paris, France. pp.438-443, ⟨10.1109/ICUWB.2014.6959022⟩. ⟨hal-03528685⟩

• Communication dans un congrès

Broadband sound attenuation on a periodic array of rectangular profile holes in plate

Rayisa P. Moiseyenko, Yan Pennec, Rémi Marchal, Bernard Bonello, Bahram Djafari-Rouhani

Transmission of acoustic waves through a periodic array of sub-wavelength slits or holes have been studied in several recent works in relation with physical phenomena such as resonant (extraordinary) transmission, broadband sound shielding or acoustic induced transparency (AIT). In this work, we…

SPIE Smart Structures/NDE 2014, Conference 9057 - Active and Passive Smart Structures and Integrated Systems VIII, 2014, San Diego, CA, France. 90571Q, 6 p., ⟨10.1117/12.2044845⟩. ⟨hal-00969103⟩

• Communication dans un congrès

On clustering for deterministic and measured indoor mmW channels

Maria-Teresa Martinez-Ingles, Davy Gaillot, Juan Pascual-Garcia, Jose-Maria Garcia-Pardo, M. Lienard, Jose-Victor Rodriguez

8th European Conference on Antennas and Propagation, EuCAP 2014, Apr 2014, The Hague, Netherlands. pp.801-802, ⟨10.1109/EuCAP.2014.6901883⟩. ⟨hal-03346257⟩

• Communication dans un congrès

Modeling of GaN Schottky diodes

Chong Jin, Etienne Okada, Marc Faucher, Damien Ducatteau, Mohamed Zaknoune, Dimitris Pavlidis

GaN-based Schottky diodes for microwave, millimeter-wave power applications were characterized and modeled. The modeling technique employed dummy structure to derive parasitic elements introduced by access pads. Intrinsic elements were extracted by fitting junction capacitance for fixed grading…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01020469⟩

• Communication dans un congrès

Contribution au développement d'un réseau sans fil pour le contrôle santé intégré (CSI) des structures

Laïd Sadoudi, Michael Bocquet, Emmanuel Moulin, Yassin El Hillali, Farouk Benmeddour, Jamal Assaad

L'explosion des technologies sans fil durant la dernière décennie a suscité une quantité importante d'applications couvrant des domaines très variés. Dans le domaine des transports et notamment dans celui du ferroviaire, la suppression des liens filaires permet une couverture…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, May 2014, Villeneuve d'Ascq, France. 4 p. ⟨hal-01020391⟩

• Communication dans un congrès

Robust receiver in impulsive noise

Xin Yan, Laurent Clavier, Ido Nevat, Gareth W. Peters, François Septier

Impulsive interference is a strong limitation in ultra wide band systems or ad hoc networks. Using stochastic geometry without considering a guard zone around the receiver leads to an alpha-stable distribution for this interference. Based on this assumption, it is possible to design efficient…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p. ⟨hal-01020280⟩

• Article dans une revue

Graphene nanotransistors for RF charge detection

E. Pallecchi, Q. Wilmart, A.C. Betz, S.H. Jhang, G. Fève, J.M. Berroir, Sylvie Lepilliet, Gilles Dambrine, H. Happy, B. Plaçais

We have studied the static and dynamical properties of a graphene microwave nanotransistor to be used as sensitive fast charge detectors. The channel consists of exfoliated graphene on SiO2 with a 120 nm long, 900-1500 nm wide top-gate deposited on 5 nm AlOx dielectric. The scattering parameters…

Journal of Physics D: Applied Physics, 2014, 47, 094004, 5 p. ⟨10.1088/0022-3727/47/9/094004⟩. ⟨hal-00946703⟩

• Communication dans un congrès

Design and fabrication of uni-travelling carrier (UTC) photodiode based on InxGa1-xN semiconductors

Bandar Alshehri, Karim Dogheche, P.I. Seetoh, J.H. Teng, S.J. Chua, Didier Decoster, El Hadj Dogheche

This work is focused both on InxGa1-xN single-layer and InxGa1-xN/GaN multilayered structures, with high Indium content (x>35%). In this study, InGaN/GaN films are epitaxially grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The microstructure of GaN and InxGa1-xN…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond, 2014, Lille, France. ⟨hal-00961396⟩