Publications

• Article dans une revue

Irradiation damage tests on backside-illuminated CMOS APS prototypes for the extreme ultraviolet imager on-board solar orbiter

A. Benmoussa, S. Gissot, B. Giordanengo, G. Meynants, X. Wang, B. Wolfs, J. Bogaerts, U. Schuhle, G. Berger, A. Gottwald, C. Laubis, U. Kroth, F. Scholze, A. Soltani, T. Saito

IEEE Transactions on Nuclear Science, 2013, 60, pp.3907-3914. ⟨10.1109/TNS.2013.2279550⟩. ⟨hal-00877648⟩

• Chapitre d'ouvrage

Electrochemical detection

T. Houssin, V. Senez

Bridle H. Waterborne pathogens - Detection methods and applications, Academic Press/Elsevier, chapter 6, 151-192, 2013, 978-0-444-59543-0. ⟨hal-00878470⟩

• Article dans une revue

Preface for the special issue of MTAP following CBMI 2011

José M. Martínez, Bernard Merialdo, Jenny Benois-Pineau, Joemon Jose

Multimedia Tools and Applications, 2013, 62 (1), pp.1 - 4. ⟨10.1007/s11042-011-0927-6⟩. ⟨hal-01437497⟩

• Article dans une revue

Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics

A. Lecavelier Des Etangs-Levallois, Marie Lesecq, Francois Danneville, Y. Tagro, Sylvie Lepilliet, Virginie Hoel, David Troadec, D. Gloria, C. Raynaud, Emmanuel Dubois

In this work, we report on the HF performance and noise characteristics of 65 nm SOI-CMOS technology transferred onto plastic films. After transfer-bonding onto a thin flexible substrate, RF-SOI-MOSFETs are shown to feature high unity-current-gain cutoff and maximum oscillation frequencies f T /f…

Solid-State Electronics, 2013, 90, pp.73-78. ⟨10.1016/j.sse.2013.02.049⟩. ⟨hal-00914203⟩

• Communication dans un congrès

Deterministic placement of doping atoms on hydroxylated surfaces

L. Mathey, L. Veyre, H. Fontaine, V. Enyedi, K. Yckache, J. Guerrero, N. Chevalier, F. Martin, J.P. Barnes, F. Bertin, C. Durand, Maxime Berthe, B. Grandidier, C. Thieuleux, C. Coperet

An improved approach of semi-conductor doping by Molecular Layer Deposition (MLD) is investigated. Here, dopant-containing molecules are directly grafted onto silica-coated silicon wafers and optimized ligands can provide more effective dopant drive-in annealing. The grafting approach is validated…

International Conference on Solid State Devices and Materials, SSDM 2013, 2013, Fukuoka, Japan. ⟨10.7567/SSDM.2013.B-3-2⟩. ⟨hal-00956279⟩

• Article dans une revue

The Faraday threshold in small cylinders and the sidewall non-ideality

William R. Batson, Farzam Zoueshtiagh, Raviprasad Narayanan

In this work we investigate, by way of experiments and theory, the Faraday instability threshold in cylinders at low frequencies. This implies large wavelengths where effects from mode discretization cannot be ignored. Careful selection of the working fluids has resulted in an immiscible interface…

Journal of Fluid Mechanics, 2013, 729, pp.496-523. ⟨10.1017/jfm.2013.324⟩. ⟨hal-00871919⟩

• Communication dans un congrès

Fonctionnalisation de germanium par des couches minces organiques pour sa passivation et son isolation électrique

L. Fillaud, X. Lefevre, S. Smaali, S. Lenfant, D. Vuillaume, Serge Palacin, Bruno Jousselme

Matériaux et Nanostructures π-Conjugués, MNPC 13, 2013, Annecy, France. ⟨hal-00878941⟩

• Article dans une revue

Delay time calculation for dual-wavelength quantum cascade lasers

A. Hamadou, S. Lamari, Jean-Luc Thobel

Journal of Applied Physics, 2013, 114, 203102, 7 p. ⟨10.1063/1.4829914⟩. ⟨hal-00912357⟩

• Article dans une revue

Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays

N. Clement, X.L. Han, Guilhem Larrieu

Low-frequency noise is used to study the electronic transport in arrays of 14 nm gate length vertical silicon nanowire devices. We demonstrate that, even at such scaling, the electrostatic control of the gate-all-around is sufficient in the sub-threshold voltage region to confine charges in the…

Applied Physics Letters, 2013, 103 (26), pp.263504. ⟨10.1063/1.4858955⟩. ⟨hal-00922923⟩

• Article dans une revue

Evaluation of the surface bonding energy of an InP membrane bonded oxide-free to Si using instrumented nanoindentation

K. Pantzas, G. Patriarche, Éric Le Bourhis, David Troadec, A. Itawi, G. Beaudoin, I. Sagnes, A. Talneau

Applied Physics Letters, 2013, 103, pp.081901-1-4. ⟨10.1063/1.4817675⟩. ⟨hal-00872063⟩