Publications

Affichage de 7241 à 7250 sur 16090


  • Communication dans un congrès

Réalisation et caractérisation de transistors à effet de champ à hétérojonction de la filière InAlAs/InGaAs sur substrat flexible

J.S. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

18èmes Journées Nationales Microondes, JNM 2013, 2013, Paris, France. papier J2-DA-P9, 4 p. ⟨hal-00878373⟩

  • Communication dans un congrès

Series-like InP transferred electron devices for CW submillimeter-wave power pources

Christophe Dalle

37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, 2013, Warnemünde, Germany. pp.19-20. ⟨hal-00828413⟩

  • Communication dans un congrès

Real time bio mechanical characterization of DNA damage under therapeutic radiation beams

G. Perret, T. Lacornerie, M. Kumemura, N. Lafitte, H. Guillou, L. Jalabert, E. Lartigau, T. Fujii, F. Cleri, H. Fujita, D. Collard

We report the first real-time biomechanical measurement of DNA bundle degradation in solution when exposed to a therapeutic radiation beam. The Silicon Nano Tweezers and their microfluidic endure the harsh environment of radiation beams and still retain molecular-level accuracy. This result paves…

17th International Conference on Miniaturized Systems for Chemistry and Life Sciences, microTAS 2013, 2013, Freiburg, Germany. pp.1162-1163. ⟨hal-00940877⟩

  • Communication dans un congrès

Enhanced gold film-coupled graphene-based plasmonic nanosensor

Rana Nicolas, Thomas Maurer, Julien Proust, Jérémie Béal, Silvere Schuermans, Edy Wijaya, Jean-Pierre Vilcot, Jerome Plain, Rabah Boukherroub, Pierre-Michel Adam, Sabine Szunerits, Gaëtan Lévêque, Abdellatif Akjouj, Bahram Djafari-Rouhani

Summer School of Plasmonics, SSOP3, 2013, Cargese, France. ⟨hal-01063873⟩

  • Article dans une revue

Pattern classification by memristive crossbar circuits using ex situ and in situ training

F. Alibart, E. Zamanidoost, D.B. Strukov

Nature Communications, 2013, 4, pp.2072-1-7. ⟨10.1038/ncomms3072⟩. ⟨hal-00871928⟩

  • Article dans une revue

First reliability demonstration of sub-200 nm AlN/GaN-on-silicon double heterostructure HEMTs for Ka band applications

G. Meneghesso, M. Meneghini, F Medjdoub, Y. Tagro, B. Grimbert, D. Ducatteau, N. Rolland, R. Silvestri, E. Zanoni

IEEE Transactions on Device and Materials Reliability, 2013, 13, pp.480-488. ⟨10.1109/TDMR.2013.2276425⟩. ⟨hal-00913577⟩