Publications

Affichage de 7671 à 7680 sur 16092


  • Communication dans un congrès

Importance-weighted the imbalanced data for C-SVM classifier to human activity recognition

M.B. Abidine, B. Fergani, Laurent Clavier

9th International Workshop on Systems, Signal Processing and their Applications, WoSSPA 2013, 2013, Algiers, Algeria. pp.330-335, ⟨10.1109/WoSSPA.2013.6602386⟩. ⟨hal-00879486⟩

  • Communication dans un congrès

Interferometric technique for scanning near-field microwave microscopy applications

H. Bakli, Kamel Haddadi, T. Lasri

IEEE International Instrumentation and Measurement Technology Conference, I2MTC 2013, 2013, Minneapolis, MN, United States. pp.1694-1698, ⟨10.1109/I2MTC.2013.6555703⟩. ⟨hal-00877837⟩

  • Communication dans un congrès

Functionalized gold nanoparticles with electropolymerizable conjugated systems for organic transistors behaving as biological synapse

A. Yassin, M. Oçafrain, David Guérin, S. Lenfant, D. Vuillaume, J. Roncali, P. Blanchard

Matériaux et Nanostructures π-Conjugués, MNPC 13, 2013, Annecy, France. ⟨hal-00878944⟩

  • Article dans une revue

Analytical procedure for determining the linear and nonlinear effective properties of the elastic composite cylinder

S. Giordano

International Journal of Solids and Structures, 2013, 50, pp.4055-4069. ⟨10.1016/j.ijsolstr.2013.08.017⟩. ⟨hal-00871911⟩

  • Communication dans un congrès

[Invited] Graphene growth by molecular beam epitaxy (on SiC)

E. Moreau, S. Godey, X. Wallart, I. Razado-Colambo, J. Avila, M.C. Asensio, D. Vignaud

PDI Topical Workshop on MBE-Grown Graphene, 2013, Berlin, Germany. ⟨hal-00878497⟩

  • Article dans une revue

Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT

François Lecourt, Alain Agboton, Nico Ketteniss, Hannes Behmenburg, N. Defrance, Virginie Hoel, Holger Kalisch, Andrei Vescan, Michael Heuken, Jean-Claude de Jaeger

Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In 0.11 Al 0.72 Ga 0.17 N/GaN heterostructure on sapphire substrate are fabricated and characterized. This structure shows a very high Hall electron mobility of 2200 cm 2 /V·s, which is the highest value ever…

IEEE Electron Device Letters, 2013, 34, pp.978-980. ⟨10.1109/LED.2013.2266123⟩. ⟨hal-00872022⟩

  • Communication dans un congrès

Photomixing THz sources : mW level and kHz linewidth

Emilien Peytavit, Guillaume Ducournau, P. Szriftgiser, Alexandre Beck, Tahsin Akalin, Jean-Francois Lampin

European Microwave Week 2013, Workshops and Short Courses, W12, EuMC & EuMIC, Terahertz Technologies - From Materials to Devices and Their Applications, 2013, Nuremberg, Germany. ⟨hal-00878926⟩

  • Communication dans un congrès

94-GHz load pull measurements of SiGe HBT by extracting output power density in W-band

Issam Hasnaoui, Elodie Canderle, Pascal Chevalier, Daniel Gloria, Christophe Gaquière

In this paper, we present a W-Band load pull test bench used to improve a characterization of Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT). High accuracy is obtained in Load-pull measurements at 94 GHz on lastgeneration SiGe HBTs by extracting the input reflection hot Sparameter (…

8th European Microwave Integrated Circuits Conference, EuMIC 2013, and 43rd European Microwave Conference, EuMC 2013, European Microwave Week 2013, 2013, Nuremberg, Germany. paper EuMC/EuMIC04-4, 400-403. ⟨hal-00922493⟩

  • Article dans une revue

Record combination of power-gain cut-off frequency and three-terminal breakdown voltage for GaN-on-silicon devices

F Medjdoub, B. Grimbert, D. Ducatteau, N. Rolland

Japanese Journal of Applied Physics, part 2 : Letters, 2013, 6, pp.044001-1-3. ⟨10.7567/APEX.6.044001⟩. ⟨hal-00809852⟩