Publications

• Article dans une revue

Record combination of power-gain cut-off frequency and three-terminal breakdown voltage for GaN-on-silicon devices

F Medjdoub, B. Grimbert, D. Ducatteau, N. Rolland

Japanese Journal of Applied Physics, part 2 : Letters, 2013, 6, pp.044001-1-3. ⟨10.7567/APEX.6.044001⟩. ⟨hal-00809852⟩

• Article dans une revue

Lysozyme detection on aptamer functionalized graphene-coated SPR interfaces

P. Subramanian, A. Lesniewski, I. Kaminska, Alexis Vlandas, A. Vasilescu, J. Niedziolka-Jonsson, E. Pichonat, H. Happy, Rabah Boukherroub, Sabine Szunerits

Biosensors and Bioelectronics, 2013, 50, pp.239-243. ⟨10.1016/j.bios.2013.06.026⟩. ⟨hal-00877645⟩

• Article dans une revue

Hypersound damping in vitreous silica measured by ultrafast acoustics

S. Sadtler, Arnaud Devos, M. Foret

International Journal of Thermophysics, 2013, 34, pp.1785-1794. ⟨10.1007/s10765-013-1511-2⟩. ⟨hal-00877635⟩

• Autre publication scientifique

Contribution à l'étude et à la réalisation de systèmes de communication inter puces à très haut débit en gamme millimétrique

Samuel Foulon

2013. ⟨hal-00825117⟩

• Article dans une revue

Improvement of the oxidation interface in an AlGaAs/AlxOy waveguide structure by using a GaAs/AlAs superlattice

J.Y. Song, S. Bouchoule, G. Patriarche, E. Galopin, A.M. Yacomotti, E. Cambril, Q.G. Kou, David Troadec, J.J. He, J.C. Harmand

The wet oxidation from the mesa sidewalls of AlGaAs/GaAs epitaxial structures is investigated in details. In addition to the intended lateral oxidation of the Al-rich buried layer, we observe a parasitic vertical oxidation of the adjacent layers of lower Al content. This vertical oxidation produces…

Physica Status Solidi A (applications and materials science), 2013, 210, pp.1171-1177. ⟨10.1002/pssa.201228770⟩. ⟨hal-00872060⟩

• Article dans une revue

Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT

François Lecourt, Alain Agboton, Nico Ketteniss, Hannes Behmenburg, N. Defrance, Virginie Hoel, Holger Kalisch, Andrei Vescan, Michael Heuken, Jean-Claude de Jaeger

Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In 0.11 Al 0.72 Ga 0.17 N/GaN heterostructure on sapphire substrate are fabricated and characterized. This structure shows a very high Hall electron mobility of 2200 cm 2 /V·s, which is the highest value ever…

IEEE Electron Device Letters, 2013, 34, pp.978-980. ⟨10.1109/LED.2013.2266123⟩. ⟨hal-00872022⟩

• Communication dans un congrès

A multi-path multi-rate CMOS polar DPA for wideband multi-standard RF transmitters

A. Werquin, A. Frappe, A. Kaiser

IEEE Radio Frequency Integrated Circuits Symposium, IEEE RFIC 2013, 2013, Seattle, WA, United States. paper RTU2A-4, 327-330, ⟨10.1109/RFIC.2013.6569595⟩. ⟨hal-00877745⟩

• Article dans une revue

Blind digital modulation detector for MIMO systems over high-speed railway channels

Sofiane Kharbech, Iyad Dayoub, E. Simon, Marie Zwingelstein

Lecture Notes in Computer Science, 2013, 7865, pp.232-241. ⟨10.1007/978-3-642-37974-1_19⟩. ⟨hal-00877703⟩

• Article dans une revue

Fast slot characterization using laser ultrasonics and mode conversion

F. Faëse, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

Measurement Science and Technology, 2013, 24, 095602, 7 p. ⟨10.1088/0957-0233/24/9/095602⟩. ⟨hal-00877664⟩

• Communication dans un congrès

Interferometric technique for scanning near-field microwave microscopy applications

H. Bakli, Kamel Haddadi, T. Lasri

IEEE International Instrumentation and Measurement Technology Conference, I2MTC 2013, 2013, Minneapolis, MN, United States. pp.1694-1698, ⟨10.1109/I2MTC.2013.6555703⟩. ⟨hal-00877837⟩