Publications

Affichage de 7721 à 7730 sur 16109


  • Communication dans un congrès

[Invited] Graphene growth by molecular beam epitaxy (on SiC)

E. Moreau, S. Godey, X. Wallart, I. Razado-Colambo, J. Avila, M.C. Asensio, D. Vignaud

PDI Topical Workshop on MBE-Grown Graphene, 2013, Berlin, Germany. ⟨hal-00878497⟩

  • Article dans une revue

Record combination of power-gain cut-off frequency and three-terminal breakdown voltage for GaN-on-silicon devices

F Medjdoub, B. Grimbert, D. Ducatteau, N. Rolland

Japanese Journal of Applied Physics, part 2 : Letters, 2013, 6, pp.044001-1-3. ⟨10.7567/APEX.6.044001⟩. ⟨hal-00809852⟩

  • Article dans une revue

Lysozyme detection on aptamer functionalized graphene-coated SPR interfaces

P. Subramanian, A. Lesniewski, I. Kaminska, Alexis Vlandas, A. Vasilescu, J. Niedziolka-Jonsson, E. Pichonat, H. Happy, Rabah Boukherroub, Sabine Szunerits

Biosensors and Bioelectronics, 2013, 50, pp.239-243. ⟨10.1016/j.bios.2013.06.026⟩. ⟨hal-00877645⟩

  • Article dans une revue

Hypersound damping in vitreous silica measured by ultrafast acoustics

S. Sadtler, Arnaud Devos, M. Foret

International Journal of Thermophysics, 2013, 34, pp.1785-1794. ⟨10.1007/s10765-013-1511-2⟩. ⟨hal-00877635⟩

  • Article dans une revue

Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT

François Lecourt, Alain Agboton, Nico Ketteniss, Hannes Behmenburg, N. Defrance, Virginie Hoel, Holger Kalisch, Andrei Vescan, Michael Heuken, Jean-Claude de Jaeger

Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In 0.11 Al 0.72 Ga 0.17 N/GaN heterostructure on sapphire substrate are fabricated and characterized. This structure shows a very high Hall electron mobility of 2200 cm 2 /V·s, which is the highest value ever…

IEEE Electron Device Letters, 2013, 34, pp.978-980. ⟨10.1109/LED.2013.2266123⟩. ⟨hal-00872022⟩

  • Communication dans un congrès

A multi-path multi-rate CMOS polar DPA for wideband multi-standard RF transmitters

A. Werquin, A. Frappe, A. Kaiser

IEEE Radio Frequency Integrated Circuits Symposium, IEEE RFIC 2013, 2013, Seattle, WA, United States. paper RTU2A-4, 327-330, ⟨10.1109/RFIC.2013.6569595⟩. ⟨hal-00877745⟩

  • Article dans une revue

Blind digital modulation detector for MIMO systems over high-speed railway channels

Sofiane Kharbech, Iyad Dayoub, E. Simon, Marie Zwingelstein

Lecture Notes in Computer Science, 2013, 7865, pp.232-241. ⟨10.1007/978-3-642-37974-1_19⟩. ⟨hal-00877703⟩

  • Article dans une revue

Fast slot characterization using laser ultrasonics and mode conversion

F. Faëse, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

Measurement Science and Technology, 2013, 24, 095602, 7 p. ⟨10.1088/0957-0233/24/9/095602⟩. ⟨hal-00877664⟩

  • Communication dans un congrès

Interferometric technique for scanning near-field microwave microscopy applications

H. Bakli, Kamel Haddadi, T. Lasri

IEEE International Instrumentation and Measurement Technology Conference, I2MTC 2013, 2013, Minneapolis, MN, United States. pp.1694-1698, ⟨10.1109/I2MTC.2013.6555703⟩. ⟨hal-00877837⟩