Publications

Affichage de 7751 à 7760 sur 16173


  • Communication dans un congrès

Low loss microstrip transmission-lines using cyclic olefin copolymer COC-substrate for sub-THz and THz applications

Abdallah Chahadih, Magdalena Chudzik, Israel Arnedo, Abbas Ghaddar, Ivan Arregui, Fernando Teberio, Aintzane Lujambio, Miguel A. G. Laso, Txema Lopetegi, Tahsin Akalin

We describe low loss microstrip transmission line with compact coplanar waveguide transitions for sub-terahertz application. The conducting transmission line is fabricated on the surface of a thin cyclic olefin copolymer dielectric layer. A vector network analyzer (VNA) has been used to obtain the…

38th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2013, Sep 2013, Mainz, Germany. paper WE P2-81, 2 p., ⟨10.1109/IRMMW-THz.2013.6665702⟩. ⟨hal-00914251⟩

  • Communication dans un congrès

Digital-to-analog and analog-to-digital conversion with metal oxide memristors for ultra-low power computing

L.G. Gao, F. Merrikh-Bayat, F. Alibart, X.J. Guo, B.D. Hoskins, K.T. Cheng, D.B. Strukov

9th IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2013, 2013, New-York, NY, United States. pp.19-22, ⟨10.1109/NanoArch.2013.6623031⟩. ⟨hal-00909953⟩

  • Communication dans un congrès

Larges bandes interdites phononiques dans une structure de piliers coniques déposés sur un substrat piézoélectrique

Abdelali Mrabti, Mourad Oudich, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani, Abdelkrim Talbi, Jérémy Streque, Yu Du, Ali Soltani, Philippe Pernod

Dans ce papier nous étudions l'existence et le comportement des bandes interdites absolues en dessous de la ligne du son du substrat dans une structure phononique. Le cristal phononique est constitué de piliers coniques de Nickel déposés sur un substrat de Niobate de Lithium (LiNbO3). Nous…

16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, 2013, Grenoble, France. papier 95, 3 p. ⟨hal-00977478⟩

  • Communication dans un congrès

Terahertz negative index metamaterials by means of stacked subwavelength hole arrays

N. Soltani, Guillaume Ducournau, Eric Lheurette, Jean-Francois Lampin, D. Lippens

7th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, Metamaterials 2013, 2013, Bordeaux, France. Poster session II, 3 p., published by Metamorphose-VI, CD-ISBN 978-952-67611-5-2. ⟨hal-00881305⟩

  • Communication dans un congrès

Surface acoustic wave scattering matrix evaluation using COMSOL Multiphysics®: application to surface acoustic wave transmission through 2D surface phononic crystal

S. Yankin, Abdelkrim Talbi, Vladimir Preobrazhensky, Philippe Pernod, Olivier Bou Matar, A. Pavlova

COMSOL Conference 2013, 2013, Rotterdam, Netherlands. 3 p. ⟨hal-00881296⟩

  • Communication dans un congrès

Bending effect on frequency performance of InAlAs/InGaAs HEMT transferred on flexible substrate

S. Bollaert, J.S. Shi, Nicolas Wichmann, Yannick Roelens

71st Annual Device Research Conference, DRC 2013, 2013, Notre Dame, IN, United States. paper III-31, 111-112, ⟨10.1109/DRC.2013.6633818⟩. ⟨hal-00904681⟩

  • Communication dans un congrès

Confocal Raman spectroscopy of graphene on hexagonal boron nitride

Sylvain Engels, F. Forster, A. Molina-Sanchez, A. Epping, K. Watanabe, T. Taniguchi, L. Wirtz, C. Stampfer

XXVIIth International Winterschool on Electronic Properties of Novel Materials, IWEPNM 2013, 2013, Kirchberg, Austria. ⟨hal-00903354⟩

  • Communication dans un congrès

THz wireless communications at high data rate using plasma-wave field-effect transistors for detection: State of the art and perspectives

S. Blin, L. Tohme, P. Nouvel, A. Pénarier, D. Coquillat, W. Knap, Guillaume Ducournau, Jean-Francois Lampin, S. Bollaert, S. Hisatake, T. Nagatsuma

GDRI – THz, 2013, Montpellier, France. ⟨hal-01929183⟩

  • Communication dans un congrès

Strain relaxation and thermal effects on the drain conductance in AlGaN/GaN HEMT

A. Telia, A. Bellakhdar, L. Semra, A. Soltani

In this work the effects of technological and electrical parameters of Al m Ga 1-m N/GaN High Electron Mobility Transistors (HEMT) on the output conductance "gd" was studied in the first part. In the second part, the effect on gd of thermal and self heating in the device was analyzed.…

2nd Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013, 2013, Riyadh, Saudi Arabia. 6 p., ⟨10.1109/SIECPC.2013.6550780⟩. ⟨hal-00877787⟩