Publications

• Autre publication scientifique

Amplificateurs de puissance et convertisseurs DC/DC à base GaN pour des applications hyperfréquences

Florent Gamand

2013. ⟨hal-00878448⟩

• Communication dans un congrès

[Invited] Graphene growth by molecular beam epitaxy (on SiC)

E. Moreau, S. Godey, X. Wallart, I. Razado-Colambo, J. Avila, M.C. Asensio, D. Vignaud

PDI Topical Workshop on MBE-Grown Graphene, 2013, Berlin, Germany. ⟨hal-00878497⟩

• Article dans une revue

Legendre and Laguerre polynomial approach for modeling of wave propagation in layered magneto-electro-elastic media

Olivier Bou Matar, Noura Gasmi, Huan Zhou, M. Goueygou, Abdelkrim Talbi

A numerical method to compute propagation constants and mode shapes of elastic waves in layered piezoelectric-piezomagnetic composites, potentially deposited on a substrate, is described. The basic feature of the method is the expansion of particle displacement, stress fields, electric and magnetic…

Journal of the Acoustical Society of America, 2013, 133 (3), pp.1415-1424. ⟨10.1121/1.4776198⟩. ⟨hal-00799251⟩

• Article dans une revue

Manifestation of charged and strained graphene layers in the Raman response of graphite intercalation compounds

J.C. Chacon-Torres, L. Wirtz, T. Pichler

ACS Nano, 2013, 7, pp.9249-9259. ⟨10.1021/nn403885k⟩. ⟨hal-00878430⟩

• Communication dans un congrès

Antenne fer platine sur substrat ultra-souple accordable mécaniquement en fréquence en bande millimétrique

Y. Orlic, B. Lacroix, Nicolas Tiercelin, G. Dufour, Philippe Pernod, Vladimir Preobrazhensky, J. Papapolymerou, P. Coquet

18èmes Journées Nationales Microondes, JNM 2013, 2013, Paris, France. papier J1-TM2-5, 4 p. ⟨hal-00878385⟩

• Communication dans un congrès

AlN/SI interfaces properties revealed by broadband characterization of coplanar waveguides

Adrien Cutivet, Alain Agboton, Philippe Altuntas, François Lecourt, Marie Lesecq, Nicolas Defrance, Yvon Cordier, Magdalena Chmielowska, Stephanie Rennesson, Julien Camus, Keltouma Aït Aïssa, Laurent Le Brizoual, Mohamed Abdou Djouadi, Jean-Claude de Jaeger, François Boone, Hassan Maher

This paper focuses on the electrical investigation of various AlN/Si interfaces by means of broadband characterization and modeling of CPW (coplanar waveguide) for frequencies up to 50 GHz. These electric measurements are performed under different biases and temperatures in order to investigate the…

37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, 2013, Warnemünde, Germany. pp.37-38. ⟨hal-00828412⟩

• Communication dans un congrès

Performance analysis of OCDMA systems with 2-D optical codes in MMF channels

H. Mrabet, Iyad Dayoub, R. Attia

TELECOM'2013 and 8èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2013, Marrakech, Morocco. papier 252, 1-4. ⟨hal-00804740⟩

• Communication dans un congrès

Technique interférométrique pour la caractérisation diélectrique en milieu liquide par ligne coaxiale ouverte

H. Balki, M. Moutaoukil, Kamel Haddadi, T. Lasri

TELECOM'2013 and 8èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2013, Marrakech, Maroc. papier 266, 1-4. ⟨hal-00804745⟩

• Article dans une revue

An interferometric scanning microwave microscope and calibration method for sub-fF microwave measurements

Thomas Dargent, Kamel Haddadi, T. Lasri, N. Clément, D. Ducatteau, Bernard Legrand, H. Tanbakuchi, Didier Theron

We report on an adjustable interferometric set-up for Scanning Microwave Microscopy. This interferometer is designed in order to combine simplicity, a relatively flexible choice of the frequency of interference used for measurements as well as the choice of impedances range where the interference…

Review of Scientific Instruments, 2013, 84 (12), pp.123705. ⟨10.1063/1.4848995⟩. ⟨hal-00922585⟩

• Communication dans un congrès

Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate

Alain Agboton, N. Defrance, Philippe Altuntas, Vanessa Avramovic, Adrien Cutivet, Rezki Ouhachi, Jean-Claude de Jaeger, Samira Bouzid-Driad, Maher, Hassan, M. Renvoise, Peter Frijlink

A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The influence of high parasitics in the access pads is considered using de-embedding procedure from the measured S parameters. From the…

43rd Conference on European Solid-State Device Research, Sep 2013, Bucharest, Romania. ⟨hal-03285110⟩