Publications

• Communication dans un congrès

All E-beam technology of GaN Schottky diodes and their large-signal characteristics

C. Jin, M. Zaknoune, D. Ducatteau, D. Pavlidis

37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, 2013, Warnemünde, Germany. pp.11-12. ⟨hal-00828411⟩

• Communication dans un congrès

High cut-off frequency performances of 100nm-gate InAlAs/InGaAs high electron mobility transistors on polyimide flexible substrate

J. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, 2013, Warnemünde, Germany. pp.15-16. ⟨hal-00828414⟩

• Communication dans un congrès

A GaAs MMIC single-chip RF-MEMS switched tunable LNA

R. Malmqvist, C. Samuelsson, S. Reyaz, A. Gustafsson, S. Seok, M. Fryziel, P.A. Rolland, B. Grandchamp, R. Baggen

35th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2013, 2013, Monterey, CA, United States. 4 p., ⟨10.1109/CSICS.2013.6659199⟩. ⟨hal-00906043⟩

• Communication dans un congrès

Bending effect on frequency performance of InAlAs/InGaAs HEMT transferred on flexible substrate

S. Bollaert, J.S. Shi, Nicolas Wichmann, Yannick Roelens

71st Annual Device Research Conference, DRC 2013, 2013, Notre Dame, IN, United States. paper III-31, 111-112, ⟨10.1109/DRC.2013.6633818⟩. ⟨hal-00904681⟩

• Communication dans un congrès

[Invited] Memristive technologies for neuroinspired applications

F. Alibart

Journées Scientifiques de l'Université de Nantes, Colloque 5 : Non-Volatile Emerging Memories, 2013, Nantes, France. ⟨hal-00823437⟩

• Communication dans un congrès

Confocal Raman spectroscopy of graphene on hexagonal boron nitride

Sylvain Engels, F. Forster, A. Molina-Sanchez, A. Epping, K. Watanabe, T. Taniguchi, L. Wirtz, C. Stampfer

XXVIIth International Winterschool on Electronic Properties of Novel Materials, IWEPNM 2013, 2013, Kirchberg, Austria. ⟨hal-00903354⟩

• Autre publication scientifique

Synthèse et caractérisations de couches minces de matériaux piézoélectriques sans plomb

Sébastien Quignon

2013. ⟨hal-00903352⟩

• Article dans une revue

A proof of concept of a non-resonant near-field microwave microscope based on a high impedance reflectometer

D. Glay, A. El Fellahi, T. Lasri

International Journal of Microwave and Wireless Technologies, 2013, 5, pp.301-308. ⟨10.1017/S1759078713000536⟩. ⟨hal-00872090⟩

• Article dans une revue

Water content effect on the dielectric properties of cellular concrete material

M.D. Belrhiti, S. Bri, A. Nakheli, A. Mamouni

Advances in Microwave and Wireless Technologies, 2013, 1, pp.12-15. ⟨10.12966/awmt.07.01.2013⟩. ⟨hal-00872092⟩

• Article dans une revue

Gate length variation effect on performance of gate-first self-aligned In0.53Ga0.47As MOSFET

Mohd F. Mohd Razip Wee, Arash Dehzangi, S. Bollaert, Nicolas Wichmann, Burhanuddin Y. Majlis

A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter…

PLoS ONE, 2013, 8, e82731, 8 p. ⟨10.1371/journal.pone.0082731⟩. ⟨hal-00922403⟩