Publications

• Article dans une revue

Fully atomistic simulations of phonon-limited mobility of electrons and holes in <001>-, <110>-, and <111>-oriented Si nanowires

Y.M. Niquet, C. Delerue, D. Rideau, Brice Videau

Phonon-limited mobilities of electrons and holes in Si nanowires (NWs) with 〈001〉, 〈110〉, and 〈111〉 orientations are calculated in a fully atomistic framework for diameters up to 10 nm. Electron-phonon scattering rates are computed with an sp3d5s* tight-binding model for electrons and a valence-…

• Article dans une revue

Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si3N4 by CDLTS

M. Gassoumi, B. Grimbert, Christophe Gaquière, H. Maaref

Semiconductors, 2012, 46, pp.382-385. ⟨10.1134/S1063782612030104⟩. ⟨hal-00788194⟩

• Article dans une revue

[Review] Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs

F. Berthet, Y. Guhel, H. Gualous, B. Boudart, J.L. Trolet, M. Piccione, V. Sbrugnera, B. Grimbert, Christophe Gaquière

Solid-State Electronics, 2012, 72, pp.15-21. ⟨10.1016/j.sse.2011.12.002⟩. ⟨hal-00788193⟩

• Article dans une revue

Hysteretic magnetoresistance in stress controled magnetic memory device

Yannick Dusch, V. Rudenko, Nicolas Tiercelin, S. Giordano, Vladimir Preobrazhensky, Philippe Pernod

Nanomaterialy i nanostruktury XXI vek., 2012, 2, pp.44-50. ⟨hal-00787359⟩

• Article dans une revue

Large signal microwave performances of high-k metal gate 28 nm CMOS technology

R. Ouhachi, A. Pottrain, D. Ducatteau, Etienne Okada, D. Gloria, Christophe Gaquière

Electronics Letters, 2012, 48, pp.1627-1629. ⟨10.1049/el.2012.3443⟩. ⟨hal-00788176⟩

• Article dans une revue

In-line dynamic acoustic behavior of a viscoelastic complex media : dough application

Georges Nassar, Bertrand Nongaillard, J. Cheio

Open Acoustics Journal, 2012, 5, pp.39-45. ⟨10.2174/1874837601205010039⟩. ⟨hal-00788343⟩

• Article dans une revue

Analytical modeling of acoustic emission from buried or surface-breaking crack under stress

W. Ben Khalifa, K. Jezzine, G. Hello, Sébastien Grondel

Journal of Physics: Conference Series, 2012, 353, pp.012016-1-12. ⟨10.1088/1742-6596/353/1/012016⟩. ⟨hal-00790432⟩

• Article dans une revue

A memristive nanoparticle/organic hybrid synapstor for neuroinspired computing

F. Alibart, S. Pleutin, O. Bichler, C. Gamrat, T. Serrano-Gotarredona, B. Linares-Barranco, D. Vuillaume

A large effort is devoted to the research of new computing paradigms associated to innovative nanotechnologies that should complement and/or propose alternative solutions to the classical Von Neumann/CMOS association. Among various propositions, Spiking Neural Network (SNN) seems a valid candidate…

Advanced Functional Materials, 2012, 22, pp.609-616. ⟨10.1002/adfm.201101935⟩. ⟨hal-00787366⟩

• Article dans une revue

First demonstration of high-power GaN-on-silicon transistors at 40 GHz

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this letter, high-output-power-density GaN-based high-electron-mobility transistors grown on a 100-mm silicon substrate is demonstrated for the first time at 40 GHz. The use of an optimized double heterostructure based on ultrathin barrier AlN/GaN allows both high current density and low leakage…

IEEE Electron Device Letters, 2012, 33 (8), pp.1168-1170. ⟨10.1109/LED.2012.2198192⟩. ⟨hal-00786912⟩

• Communication dans un congrès

CBRAM devices as binary synapses for low-power stochastic neuromorphic systems: auditory (cochlea) and visual (retina) cognitive processing applications

M. Suri, O. Bichler, D. Querlioz, G. Palma, E. Vianello, D. Vuillaume, C. Gamrat, B. de Salvo

In this work, we demonstrate an original methodology to use Conductive-Bridge RAM (CBRAM) devices as binary synapses in low-power stochastic neuromorphic systems. A new circuit architecture, programming strategy and probabilistic STDP learning rule are proposed. We show, for the first time, how the…

IEEE International Electron Devices Meeting, Dec 2012, San Francisco, CA, United States. ⟨10.1109/IEDM.2012.6479017⟩. ⟨hal-00803088⟩