Publications
Affichage de 8071 à 8080 sur 16181
Les technologies hautes fréquences émergentes
H. Happy
Salon RF Hyper & Wireless, 2012, Paris, France. ⟨hal-00797366⟩
Influence of antimony on III-V nanowires grown by MBE
P. Caroff, S. Conesa-Boj, Y. Makoudi, B. Grandidier, A. Fontcuberta I Morral, X. Wallart
6th Nanowire Growth Workshop, 2012, Saint Petersburg, Russia. ⟨hal-00797348⟩
[Invited] Can we achieve high power GaN-on-Si in the mmW range ?
F Medjdoub
48th Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2012, 2012, Napa Valley, CA, United States. ⟨hal-00797332⟩
Nonlinear magnetoelectric effect in multiferroic nanostructure TbCo/FeCo-AlN in high frequency electromagnetic field
Y. Ignatov
13èmes Journées de la Matière Condensée, JMC13, 2012, Montpellier, France. ⟨hal-00797665⟩
Optical properties of GaAs/GaAs(1-x)Sbx heterostructure nanowires grown by MBE
Y. Fontana, S. Conesa Boj, P. Caroff, A. Fontcubeta I Morral
31st International Conference on the Physics of Semiconductors, ICPS 2012, 2012, Zurich, Switzerland. ⟨hal-00797655⟩
Observation of the superconductivity in a Nb-InSb nanowire-Nb hybrid quantum device
C.L. Yu, M.T. Deng, P. Caroff, H.Q. Xu
31st International Conference on the Physics of Semiconductors, ICPS 2012, 2012, Zurich, Switzerland. ⟨hal-00797653⟩
Conductance statistics from a large array of sub-10 nm molecular junctions
K. Smaali, N. Clement, G. Patriarche, D. Vuillaume
International Conference on Nanoscience and Technology, ICN+T 2012, 2012, Paris, France. ⟨hal-00797676⟩
Investigation of GaAs/GaAsxSb1-x nanowires by micro-Raman spectroscopy
L. Zweifel, P. Caroff, S. Conesa Boj, M. Heiss, A. Fontcubeta I Morral
31st International Conference on the Physics of Semiconductors, ICPS 2012, 2012, Zurich, Switzerland. ⟨hal-00797652⟩
The vibration dipole : a time reversed acoustics scheme for the experimental localisation of surface breaking cracks
B. van Damme, K. van den Abeele, Olivier Bou Matar
Applied Physics Letters, 2012, 100, pp.084103-1-3. ⟨10.1063/1.3690043⟩. ⟨hal-00787355⟩
Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) silicon using a GaSb/GaP accommodation layer
L. Desplanque, S. El Kazzi, Christophe Coinon, S. Ziegler, B. Kunert, A. Beyer, K. Volz, W. Stolz, Y. Wang, P. Ruterana, X. Wallart
Applied Physics Letters, 2012, 101, pp.142111-1-4. ⟨10.1063/1.4758292⟩. ⟨hal-00787025⟩