Publications

• Article dans une revue

In situ silicon-integrated tuner for automated on-wafer mmW noise parameters extraction using multi-impedance method for transistor characterization

Y. Tagro, N. Waldhoff, D. Gloria, S. Boret, Gilles Dambrine

IEEE Transactions on Semiconductor Manufacturing, 2012, 25, pp.170-177. ⟨10.1109/TSM.2011.2181673⟩. ⟨hal-00819467⟩

• Communication dans un congrès

Contact mechanics based on Preisach analysis

Vladislav Aleshin

The origin of acoustic contact nonlinearity is in nonlinear force-displacement relationships for mechanical contacts between solids or surfaces. The response of a particular contact depends on shapes of contacting surfaces (regular or random) as well as on external excitation (normal and/or…

European GDR-Workshop on Nonlinearities in Acoustics, 2012, Nice, France. ⟨hal-00819461⟩

• Communication dans un congrès

Calculation of thermal resistances by approach-to-equilibrium molecular dynamics

E. Lampin, P.A. Francioso, Pier Luca Palla, F. Cleri

European Materials Research Society Fall Meeting, E-MRS Fall 2012, Symposium I - Computer modelling in nanoscience and nanotechnology : an atomic-scale perspective II, 2012, Warsaw, Poland. ⟨hal-00797757⟩

• Communication dans un congrès

Integrated prism-free coupled surface plasmon resonance biochemical sensor

C. Lenaerts, J. Hastanin, B. Pinchemel, Sophie Maricot, Jean-Pierre Vilcot, S. Habraken, N. Maalouli, E. Wijaya, M. Bouazaoui, C. Desfours, K. Fleury

2nd Workshop on Frontiers in Biological Detection, PLASMOBIO 2012, 2012, Mons, Belgium. ⟨hal-00797733⟩

• Article dans une revue

First demonstration of high-power GaN-on-silicon transistors at 40 GHz

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this letter, high-output-power-density GaN-based high-electron-mobility transistors grown on a 100-mm silicon substrate is demonstrated for the first time at 40 GHz. The use of an optimized double heterostructure based on ultrathin barrier AlN/GaN allows both high current density and low leakage…

IEEE Electron Device Letters, 2012, 33 (8), pp.1168-1170. ⟨10.1109/LED.2012.2198192⟩. ⟨hal-00786912⟩

• Article dans une revue

Decoding metric study for turbo codes in very impulsive environment

W. Gu, Laurent Clavier

IEEE Communications Letters, 2012, 16, pp.256-258. ⟨10.1109/LCOMM.2011.112311.111504⟩. ⟨hal-00786905⟩

• Article dans une revue

Lode dependency in the cold die powder compaction process

S.A. Rolland, P. Mosbah, D.T. Gethin, R.W. Lewis

Powder Technology, 2012, 221, pp.123-136. ⟨10.1016/j.powtec.2011.12.044⟩. ⟨hal-00786891⟩

• Article dans une revue

Intra-band gap in Lamb modes propagating in a periodic solid structure

J. Pierre, M. Renier, Bernard Bonello, Anne-Christine Hladky

Journal of Physics D: Applied Physics, 2012, 45, pp.185305-1-5. ⟨10.1088/0022-3727/45/18/185305⟩. ⟨hal-00786888⟩

• Article dans une revue

Combinatorial approaches to understanding polytypism in III-V nanowires

J. Johansson, J. Bolinsson, M. Ek, P. Caroff, K.A. Dick

ACS Nano, 2012, 6, pp.6142-6149. ⟨10.1021/nn301477x⟩. ⟨hal-00786988⟩

• Article dans une revue

Fully atomistic simulations of phonon-limited mobility of electrons and holes in <001>-, <110>-, and <111>-oriented Si nanowires

Y.M. Niquet, C. Delerue, D. Rideau, Brice Videau

Phonon-limited mobilities of electrons and holes in Si nanowires (NWs) with 〈001〉, 〈110〉, and 〈111〉 orientations are calculated in a fully atomistic framework for diameters up to 10 nm. Electron-phonon scattering rates are computed with an sp3d5s* tight-binding model for electrons and a valence-…