Publications

• Communication dans un congrès

Vibrational distribution function of N2(C3Πu, v') state in N2-Ar discharge created by a RF helical coupling device

A. Annusova, C. Foissac, J. Kristof, P. Veis, P. Supiot

XXI Europhysics Conference on Atomic and Molecular Physics of Ionized Gases, ESCAMPIG 2012, 2012, Viana do Castelo, Portugal. paper P1.1.10, 1-2. ⟨hal-00802624⟩

• Communication dans un congrès

[Invited] High frequency characterization of nanotechnologies : toward new instrumentations and techniques

Gilles Dambrine, Kamel Haddadi, Christophe Gaquière, T. Lasri, Y. Tagro, L. Poulain, A. Pottrain

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-4. ⟨hal-00801042⟩

• Communication dans un congrès

Reliability studies of pentacene-based thin film transistors

Romuald Ledru, Stéphane Pleutin, Bruno Grouiez, Damien Zander, H. Bejbouji, Kamal Lmimouni, Dominique Vuillaume

The complex admittance of the Si+/SiO2/Pentacene/Au (metal/oxide/pentacene) thin film junctions is investigated under ambient conditions. The results are compared with the ones obtained for the corresponding Si+/SiO2/Au junctions (i.e. a small part of the surface left free from pentacene) which…

Materials Research Society Spring Meeting, MRS Spring 2012, Symposium J : Organic and Hybrid-Organic Electronics, 2012, San Francisco, CA, United States. ⟨10.1557/opl.2012.1248⟩. ⟨hal-00797703⟩

• Communication dans un congrès

[Invited] The electro-magneto-elastic Eshelby tensor : applications to homogenization methods and nano-structures

S. Giordano, Yannick Dusch, Nicolas Tiercelin, Philippe Pernod, Vladimir Preobrazhensky

Colloque National MECAMAT, 2012, Aussois, France. pp.1-13. ⟨hal-00806603⟩

• Article dans une revue

Comparative study of erbium disilicide thin films grown in situ under ultrahigh vacuum or ex situ with a capping layer

N. Reckinger, C.A. Dutu, Xing Tang, Emmanuel Dubois, Dmitri Yarekha, S. Godey, L. Nougaret, A. Laszcz, J. Ratajczak, J.P. Raskin

Thin Solid Films, 2012, 520, pp.4501-4505. ⟨10.1016/j.tsf.2012.02.076⟩. ⟨hal-00787381⟩

• Article dans une revue

Erratum: ''Enhanced directional optical transmission'' [Appl. Phys. Lett. 93, 043114 (2008)]

L. Dobrzynski, Abdellatif Akjouj

Applied Physics Letters, 2012, 101, pp.149901-1. ⟨10.1063/1.4756784⟩. ⟨hal-00787476⟩

• Article dans une revue

Exploitation of acoustic noise correlation for structural health monitoring applications

Najib Abou Leyla, Emmanuel Moulin, Jamal Assaad

Many recent studies in different domains exploited the ambient noise correlation to retrieve the Green's function between two points. This technique allows a passive characterization of a given medium in the presence of a perfect diffuse field. The aim of this paper is to apply this principle…

Open Acoustics Journal, 2012, 5, pp.23-31. ⟨10.2174/1874837601205010023⟩. ⟨hal-00790362⟩

• Communication dans un congrès

Intelligent transports systems based on UWB technologies

Fouzia Boukour, Atika Rivenq

Ultra Wide Band (UWB) may offer very efficient solutions for various communication and localisation transport applications. We propose to use this technique to establish communication vehicle- to- vehicle and vehicle- to-infrastructure. In fact, compared to traditional carrier-based, Ultra-Wide…

IEEE European Wireless Conference, Sep 2012, Poland. 5p. ⟨hal-01068408⟩

• Article dans une revue

Acousto-optic couplings in two-dimensional phoxonic crystal cavities

Quentin Rolland, M. Oudich, Said El-Jallal, Samuel Dupont, Yan Pennec, Joseph Gazalet, Jean-Claude Kastelik, Gaëtan Lévêque, Bahram Djafari-Rouhani

Applied Physics Letters, 2012, 101, pp.061109-1-4. ⟨10.1063/1.4744539⟩. ⟨hal-00787416⟩

• Article dans une revue

Anomaly and defects characterization by I-V and current deep level transient spectroscopy of Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors

S. Saadaoui, M.M. Ben Salem, M. Gassoumi, H. Maaref, Christophe Gaquière

In this paper, we report static electric drain-source current-voltage measurements for different gate voltages and at different temperatures, performed on Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors (HEMT). The results show the presence of kink and collapse effects. We have…

Journal of Applied Physics, 2012, 111 (7), pp.073713. ⟨10.1063/1.3702458⟩. ⟨hal-00787870⟩