Publications

Affichage de 8451 à 8460 sur 16106


  • Communication dans un congrès

Effect of phonon confinement on the dispersion relation and heat capacity in nanoscale Si membranes

J. Cuffe, E. Chávez, A. Shchepetov, P.O. Chapuis, E.H. El Boudouti, F. Alzina, Yan Pennec, Bahram Djafari-Rouhani, M. Prunnila, J. Ahopelto, C.M. Sotomayor Torres

The effect of confinement on the acoustic phonon dispersion relation and heat capacity in free-standing silicon membranes is investigated, with thickness values down ∼ 8 nm. The discrete phonon branches are observed by angle-resolved inelastic light scattering spectroscopy. The fundamental flexural…

ASME 2012 International Mechanical Engineering Congress and Exposition, Symposium on Phononic Crystals and Acoustic Metamaterials, Nov 2012, Houston, United States. pp.1081-1088, ⟨10.1115/IMECE2012-87635⟩. ⟨hal-00911369⟩

  • Communication dans un congrès

Modeling of the far-field acoustic emission from a crack under stress

W. Ben Khalifa, K. Jezzine, Sébastien Grondel, A. Lhemery, S. Chatillon

30th European Conference on Acoustic Emission Testing and 7th International Conference on Acoustic Emission, EWGAE-ICAE 2012, 2012, Granada, Spain. CD-ROM, paper ID 104, 1-13. ⟨hal-00802647⟩

  • Communication dans un congrès

Contrôle passif des tubes par inter-corrélation de champ acoustique ambiant

S. Djili, Emmanuel Moulin, Jamal Assaad, F. Boubenider, Farouk Benmeddour

3ème Conférence Internationale sur le Soudage, le Contrôle Non Destructif et l'Industrie des Matériaux et Alliages, IC-WNDT-MI'12, 2012, Aïn El Turck-Oran, Algérie. pp.17-21. ⟨hal-00802648⟩

  • Communication dans un congrès

Specular path estimation errors with ESPRIT, SAGE, and RiMAX in the presence of dense multipath

E. Tanghe, L. Martens, W. Joseph, D.P. Gaillot, M. Lienard, Pierre Degauque

2nd IEEE-APS Topical Conference on Antennas and Propagation in Wireless Communications, IEEE APWC'12, 2012, Cape Town, South Africa. pp.315-316, ⟨10.1109/APWC.2012.6324917⟩. ⟨hal-00802575⟩

  • Communication dans un congrès

Time-domain semiconductor structure simulation based on 2D/3D coupled electromagnetism/transport modeling

Christophe Dalle

Advanced Electromagnetics Symposium, AES 2012, 2012, Paris, France. pp.116-120. ⟨hal-00802589⟩

  • Communication dans un congrès

Permittivité diélectrique des liquides dans la bande X

M.D. Belrhiti, S. Bri, A. Nakheli, M. Haddad, A. Mamouni

12èmes Journées de Caractérisation Microondes et Matériaux, JCMM 2012, 2012, Chambéry, France. session S8, papier ID10, 1-4. ⟨hal-00806621⟩

  • Communication dans un congrès

Démonstration expérimentale du couplage entre dipôles magnétique et électrique de cubes ferroélectriques

Véronique Sadaune, F. Zhang, L. Kang, Q. Zhao, J. Zhou, D. Lippens

12èmes Journées de Caractérisation Microondes et Matériaux, JCMM 2012, 2012, Chambéry, France. sesion S8, papier ID6, 1-4. ⟨hal-00806601⟩

  • Communication dans un congrès

Métamatériaux fishnet aux longueurs d'ondes submillimétriques

Frédéric Garet, S. Wang, M. Astic, Eric Lheurette, Karine Blary, Jean-Louis Coutaz, Didier Lippens

12èmes Journées de Caractérisation Microondes et Matériaux, JCMM 2012, 2012, Chambéry, France. session S4, papier ID8, 1-4. ⟨hal-00806595⟩

  • Communication dans un congrès

160W InAlN/GaN HEMTs amplifier at 2 GHz with optimized thermal management

Stéphane Piotrowicz, Olivier Jardel, Jean-Claude Jacquet, D. Lancereau, Raphaël Aubry, Erwan Morvan, Nicolas Sarazin, Jérémy Dufraisse, Charu Dua, Mourad Oualli, Eric Chartier, Marie-Antoinette Di Forte-Poisson, Christophe Gaquière, Sylvain Laurent Delage

We report on the realization and measurements of InAlN/GaN HEMTs on SiC substrate. At device level, load-pull power measurements were performed at 2 GHz on 2.2mm devices in CW mode. An output power of 10.5W (40.2dBm) with a PAE of 53% were reached. Then, an amplifier was realized using 36mm power…

34th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, Oct 2012, La Jolla, CA, United States. pp.1-4, ⟨10.1109/CSICS.2012.6340059⟩. ⟨hal-00801142⟩

  • Communication dans un congrès

Source-drain scaling of ion-implanted InAs/AlSb HEMTs

G. Moschetti, P. Nilsson, A. Hallen, L. Desplanque, X. Wallart, J. Grahn

24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. pp.57-60, ⟨10.1109/ICIPRM.2012.6403318⟩. ⟨hal-00801079⟩