Publications

• Communication dans un congrès

Fabrication, characterization and analysis of AlN thin films grown on HR-silicon by MBE and PVD methods

N. Defrance, Marie Lesecq, F. Lecourt, Virginie Hoel, Jean-Claude de Jaeger

11th Expert Meeting on Evaluation & Control of Coumpound Semiconductor Materials and Technologies, EXMATEC 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801190⟩

• Communication dans un congrès

Characterization and analysis of different surface passivation for AlGaN/GaN HEMTs

F. Lecourt, N. Defrance, S. Rennesson, Virginie Hoel, Y. Cordier, Jean-Claude de Jaeger

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801154⟩

• Communication dans un congrès

Evaluación experimental de la técnica time-reversal para sistemas de gran ancho de banda en túneles

Concepcion Garcia Pardo, M. Lienard, Pierre Degauque, Jose Maria Molina Garcia-Pardo, Leandro Juan Llacer

XXVII Simposium Nacional de la Unión Científica Internacional de Radio, URSI 2012, 2012, Elche, España. pp.75-77. ⟨hal-00994829⟩

• Communication dans un congrès

A direct conversion IQ modulator in CMOS 65 nm SOI for multi-gigabit 60 GHz systems

Christophe Loyez, A. Siligaris, P. Vincent, A. Cathelin, N. Rolland

7th European Microwave Integrated Circuits Conference, EuMIC 2012, 2012, Amsterdam, Netherlands. pp.5-7. ⟨hal-00814970⟩

• Communication dans un congrès

Towards highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this work, the possibility to achieve GaN-on-Si devices for millimeter wave applications operating at high bias is demonstrated. It is shown that highly scaled AlN/GaN-on-Si double heterostructure enables to significantly improve the electron confinement under high electric field as compared to…

7th European Microwave Integrated Circuits Conference, EuMIC 2012, Oct 2012, Amsterdam, Netherlands. pp.321-324. ⟨hal-00814972⟩

• Communication dans un congrès

The thermal effect on the output conductance in AlGaN/GaN HEMT's

A. Bellakhdar, A. Telia, L. Semra, A. Soltani

24th International Conference on Microelectronics, ICM 2012, 2012, Algiers, Algeria. pp.1-4, ⟨10.1109/ICM.2012.6471365⟩. ⟨hal-00814968⟩

• Article dans une revue

Enhancement of bonding strength of packaging based on BCB bonding for RF devices

S. Seok, M. Fryziel, N. Rolland, P.A. Rolland

Microsystem Technologies, 2012, 18, pp.2035-2039. ⟨10.1007/s00542-012-1530-0⟩. ⟨hal-00786909⟩

• Article dans une revue

Trapping effects dependence on electron confinement in ultrashort GaN-on-Si high-electron-mobility transistors

F Medjdoub, Damien Ducatteau, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

We report on the dependence of trapping effects on electron confinement in ultrashort AlN/GaN-on-Si high-electron-mobility transistors grown on 100mm silicon substrates. The use of a back barrier allows a drastic reduction of the current collapse while offering high current density and high voltage…

Japanese Journal of Applied Physics, part 2 : Letters, 2012, 5 (3), pp.034103-1-3. ⟨10.1143/APEX.5.034103⟩. ⟨hal-00786953⟩

• Article dans une revue

Enhanced backscattering for infrared detection using photonic crystal based flat lens

J. Oden, M. Hofman, X. Melique, D. Lippens, O. Vanbesien

Applied optics, 2012, 51, pp.5601-5608. ⟨10.1364/AO.51.005601⟩. ⟨hal-00786957⟩

• Article dans une revue

Comparative study of erbium disilicide thin films grown in situ under ultrahigh vacuum or ex situ with a capping layer

N. Reckinger, C.A. Dutu, Xing Tang, Emmanuel Dubois, Dmitri Yarekha, S. Godey, L. Nougaret, A. Laszcz, J. Ratajczak, J.P. Raskin

Thin Solid Films, 2012, 520, pp.4501-4505. ⟨10.1016/j.tsf.2012.02.076⟩. ⟨hal-00787381⟩