Publications

• Article dans une revue

Boron distribution in the core of Si nanowire grown by chemical vapor deposition

W. Chen, V.G. Dubrovskii, X.L. Liu, T. Xu, Rodrigue Lardé, J.P. Nys, B. Grandidier, D. Stievenard, G. Patriarche, Philippe Pareige

The boron dopant distribution in Si nanowires grown by the Au-catalyzed chemical vapor deposition is characterized by laser-assisted atom probe tomography. A convenient and an effective method for performing the atom probe tomography of an individual nanowire is developed. Using this technique, we…

Journal of Applied Physics, 2012, 111 (9), pp.094909. ⟨10.1063/1.4714364⟩. ⟨hal-00787433⟩

• Article dans une revue

Theoretical and experimental evidence of level repulsion states and evanescent modes in sonic crystal stubbed waveguides

V. Romero-Garcia, Jerome O. Vasseur, Lluis Miquel Garcia-Raffi, Anne-Christine Hladky

The complex band structures calculated using the Extended Plane Wave Expansion (EPWE) reveal the presence of evanescent modes in periodic systems, never predicted by the classical ω(~k) methods, providing novel interpretations of several phenomena as well as a complete picture of the system. In…

New Journal of Physics, 2012, 14, pp.023049-1-21. ⟨10.1088/1367-2630/14/2/023049⟩. ⟨hal-00786887⟩

• Article dans une revue

Numerical and experimental investigation of kerf depth effect on high-frequency phased array transducer

Jin-Ying Zhang, Wei-Jiang Xu, Julien Carlier, X.M. Ji, S. Queste, Bertrand Nongaillard, Y.P. Huang

Background High-frequency ultrasonic transducer arrays are essential for high resolution imaging in clinical analysis and Non-Destructive Evaluation (NDE). However, the structure design and fabrication of the kerfed ultrasonic array is quite challenging when very high frequency (⩾100 MHz) is…

Ultrasonics, 2012, 52, pp.223-229. ⟨10.1016/j.ultras.2011.08.006⟩. ⟨hal-00790373⟩

• Brevet

Mémoire magnétoélectrique

Nicolas Tiercelin, Yannick Dusch, Philippe Pernod, Vladimir Preobrazhensky

N° de brevet: FR2961632 (A1). 2011. ⟨hal-00654806⟩

• Thèse

Contribution au développement de microcomposants pour la caractérisation ultrasonore en canal microfluidique sur silicium : modélisation de la propagation, Development of microcomponents for ultrasonic characterization in silicon based microchannel : propagation modeling

Assane Ndieguene

Les recherches menées pour le développement des microsystèmes ont permis d’améliorer considérablement la miniaturisation de certaines fonctions. Ces travaux, très multidisciplinaires, ont conduit à de nombreuses applications dans les domaines des télécommunications, de la chimie et de la biologie.…, The research activities for the development of microsystems enabled the downsizing of many functions. These multidisciplinary works concerns many applications in the fields of telecommunications, chemistry, and biology. In that context, our work concerned the conception and analyses of acoustical…

Micro et nanotechnologies/Microélectronique. Université de Valenciennes et du Hainaut-Cambrésis, 2011. Français. ⟨NNT : 2011VALE0033⟩. ⟨tel-03416217⟩

• Article dans une revue

Level repulsion and evanescent waves in sonic crystals

V. Romero-Garcia, Jerome O. Vasseur, Anne-Christine Hladky, Lluis Miquel Garcia-Raffi, J.V. Sanchez-Perez

This work theoretically and experimentally reports the evanescent connections between propagating bands in periodic acoustic materials. The complex band structures obtained by solving for the k(ω) problem reveal a complete interpretation of the propagation properties of these systems. The…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84, pp.212302-1-4. ⟨10.1103/PhysRevB.84.212302⟩. ⟨hal-00783380⟩

• Communication dans un congrès

The transverse electromagnetic horn antenna as an efficient THz pulse emitter

Jean-Francois Lampin, Emilien Peytavit, Tahsin Akalin, Guillaume Ducournau, Jens Klier, Sabine Wohnsiedler, Joachim Jonuscheit, René Beigang

We have fabricated a new photoconductive antenna based on a transverse electromagnetic horn and low temperature grown GaAs. It has been tested with a time-domain terahertz setup. The horn was used as the emitter and a standard dipole photoconductive antenna was used as the receiver. The spectrum…

International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2011, Oct 2011, Houston, TX, United States. paper Tu3D.2, 1-2, ⟨10.1109/irmmw-THz.2011.6105067⟩. ⟨hal-00800486⟩

• Communication dans un congrès

A 300 GHz InP/GaAsSb/InP HBT for high data rate applications

Maher, Hassan, Vincent Delmouly, U. Rouchy, Michel Renvoisé, Peter Frijlink, Derek Smith, M. Zaknoune, Damien Ducatteau, Vanessa Avramovic, André Scavennec, Jean Godin, Muriel Riet, Cristell Maneux, Bertrand Ardouin

In this paper, a fully passivated InP/GaAsSb/InP DHBT on InP substrate with excellent DC and RF performance is developed. The epi-layers are grown by the MOCVD technique, with a base layer of 25nm and a collector layer of 130nm. The emitter width of the transistor is 0.35μm and the base contact is…

Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Dec 2011, Berlin, Germany. pp.Art n°68. ⟨hal-00671674⟩

• Article dans une revue

Sliding Droplets on Superomniphobic Zinc Oxide Nanostructures

Guillaume Perry, Yannick Coffinier, V. Thomy, Rabah Boukherroub

Langmuir, 2011, 28 (1), pp.389-395. ⟨10.1021/la2035032⟩. ⟨hal-02388424⟩

• Communication dans un congrès

Optimization of carrier multiplication in quantum dots for more efficient solar cells

Christophe Delerue, Guy Allan

Reviewing recent theoretical works, we propose a strategy to optimize the carrier multiplication in semiconductor quantum dots. This strategy is discussed using calculations on quantum dots of a semi-metal, α-Sn.

Workshop on Semiconductor Nanostructures for Photovoltaics, Dec 2011, Hangzhou, China. ⟨hal-00807253⟩