Publications

• Article dans une revue

Deep structural analysis of novel BGaN material layers grown by MOVPE

S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal, K. Pantzas, David Troadec, A. Soltani, L. Largeau, O. Mauguin, A. Ougazzaden

BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional fluctuations were observed with XRD or STEM measurements. Photoluminescence at…

Journal of Crystal Growth, 2011, 315 (1), pp.288-291. ⟨10.1016/j.jcrysgro.2010.08.042⟩. ⟨hal-00554231⟩

• Article dans une revue

Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth

W.H. Goh, G. Patriarche, P.L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A.A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, David Troadec, A. Soltani, A. Ougazzaden

Nanodots, nanowires, and semi-polar quantum well structures of GaN-based material have been grown by nano-selective area growth (NSAG). The growth evolution of the nanostructure has been studied. Cross-sectional transmission electron microscopy (TEM) shows that the nanostructures are free of…

Journal of Crystal Growth, 2011, 315 (1), pp.160-163. ⟨10.1016/j.jcrysgro.2010.08.053⟩. ⟨hal-00554254⟩

• Brevet

Microsystème de génération d'un jet synthétique, procédé de fabrication et dispositif de contrôle d'écoulement correspondants

L. Gimeno-Monge, Abdelkrim Talbi, Philippe Pernod, A. Merlen, Vladimir Preobrazhensky, R. Viard

N° de brevet: FR2947813 (A1). 2011. ⟨hal-00559182⟩

• Article dans une revue

Epitaxial GaAs for X-ray imaging

G. C. Sun, R. Rao, S. Makham, J. C. Bourgoin, X. Y. Zhang, R. Gohier, F. Masiello, J. Haertwig, J. Baruchel, C. Ponchut, Andrea Balocchi, Xavier Marie, O. Gilard, Isabelle Roch-Jeune, J. C. Pesant

To be used for X-ray imaging, semiconductor materials must exhibit good and uniform electronic properties. Epitaxial layers are therefore better adapted than bulk materials which contain dislocations, precipitates and point defects in variable concentrations depending on the growth mode and the…

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011, 633 (1), pp.S65-S68. ⟨10.1016/j.nima.2010.06.123⟩. ⟨hal-01233828⟩

• Communication dans un congrès

Thin film transmission lines using cyclic olefin copolymer

Emilien Peytavit, C. Donche, Sylvie Lepilliet, Guillaume Ducournau, Jean-Francois Lampin

36th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2011, 2011, Houston, TX, United States. paper W2E.2, 1-2, ⟨10.1109/irmmw-THz.2011.6105161⟩. ⟨hal-00800490⟩

• Communication dans un congrès

Improvement in graphene nanoribbons process for field effet transistors

D. Mele, R. Fleurier, E. Pichonat, H. Happy

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00799794⟩

• Communication dans un congrès

Electrical compact modelling of graphene transistors

S. Fregonese, H.N. Nguyen, C. Majek, C. Maneux, H. Happy, N. Meng, T. Zimmer

ImagineNano, Graphene 2011, 2011, Bilbao, Spain. pp.121-122. ⟨hal-00799969⟩

• Communication dans un congrès

Wide bandgap self switch nanodevices for THz applications at room temperature

Christophe Gaquière, Guillaume Ducournau, P. Sangare, B. Grimbert, M. Faucher, I. Iniguez-De-La-Torre, A. Iniguez-De-La-Torre, T. Gonzalez, J. Mateos

41st European Microwave Conference, EuMC 2011, 2011, Manchester, United Kingdom. pp.1150-1152. ⟨hal-00800102⟩

• Article dans une revue

Atomic scale investigation of silicon nanowires and nanoclusters

Manuel Roussel, W.H. Chen, Etienne Talbot, Rodrigue Lardé, E. Cadel, F. Gourbilleau, B. Grandidier, D. Stievenard, Philippe Pareige

In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and…

Nanoscale Research Letters, 2011, 6, pp.271-1-6. ⟨10.1186/1556-276X-6-271⟩. ⟨hal-00597078⟩

• Communication dans un congrès

Fonctionnement de la photodiode à transport unipolaire et transition large bande guide d'onde-microruban dans la bande W

F. Pavanello

14èmes Journées Nationales du Réseau Doctoral de Micro et Nanoélectronique, JNRDM 2011, 2011, Cachan, France. pp.1-4. ⟨hal-00806720⟩