Publications

Affichage de 8681 à 8690 sur 16255


  • Communication dans un congrès

A crown-ether-derivatized oligothiophene doubly attached on gold surface as cation-binding electrical switchable molecular junction

K. Smaali, S. Lenfant, S. Godey, D. Vuillaume, T.K. Tran, M. Hardouin, Q. Bricaud, M. Oçafrain, P. Blanchard, J. Roncali, Christophe Krzeminski, F. Cleri, C. Delerue

6th International Meeting on Molecular Electronics, ElecMol'12, 2012, Grenoble, France. ⟨hal-00797674⟩

  • Communication dans un congrès

InAs hot electron transistors with cutoff frequency above 200 GHz

H. Nguyen Van, A. N. Baranov, R. Teissier, M. Zaknoune

24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. ⟨hal-00797314⟩

  • Communication dans un congrès

Effect of nitrogen on the optical and structural properties of dilute GaInNAs double quantum wells grown by MBE on (100), (311)A and (311)B GaAs substrates

A. Khatab, M. Henini, G. Patriarche, David Troadec, M. Sadeghi, S. Wang

17th International Conference on Molecular Beam Epitaxy, MBE 2012, 2012, Nara, Japan. ⟨hal-00798220⟩

  • Communication dans un congrès

[Invited] Playing with liquid droplets

V. Senez

10th NAMIS Workshop, ''Nano and micro systems for a better life'', 2012, Sendai, Japan. ⟨hal-00798244⟩

  • Communication dans un congrès

GaInSb nanowires grown by MOVPE

S. Gorji Ghalamestani, M. Ek, P. Caroff, K.A. Dick

6th Nanowire Growth Workshop, 2012, Saint Petersburg, Russia. ⟨hal-00797374⟩

  • Communication dans un congrès

[Invited] Graphene material for RF devices on flexible substrate

H. Happy

European Microwave Week, EuMC/EuMIC, Workshop W16 : Graphene RF Nanoelectronics, 2012, Amsterdam, Netherlands. ⟨hal-00797279⟩

  • Communication dans un congrès

Fabrication de composants passifs par impression jet d'encre - Caractérisation RF

W. Wei, Thomas Dargent, Virginie Hoel, H. Happy

12èmes Journées Pédagogiques CNFM, 2012, Saint Malo, France. ⟨hal-00797331⟩

  • Article dans une revue

Boron distribution in the core of Si nanowire grown by chemical vapor deposition

W. Chen, V.G. Dubrovskii, X.L. Liu, T. Xu, Rodrigue Lardé, J.P. Nys, B. Grandidier, D. Stievenard, G. Patriarche, Philippe Pareige

The boron dopant distribution in Si nanowires grown by the Au-catalyzed chemical vapor deposition is characterized by laser-assisted atom probe tomography. A convenient and an effective method for performing the atom probe tomography of an individual nanowire is developed. Using this technique, we…

Journal of Applied Physics, 2012, 111 (9), pp.094909. ⟨10.1063/1.4714364⟩. ⟨hal-00787433⟩

  • Communication dans un congrès

Atomistic calculations of the mobility in ultimate Si (Ge) nanowires and carbon nanotubes

Y.M. Niquet, J. Li, V.H. Nguyen, F. Triozon, W. Zhang, Christophe Krzeminski, L. Genovese, D. Rideau, C. Delerue

6th International Meeting on Molecular Electronics, ElecMol'12, 2012, Grenoble, France. ⟨hal-00797753⟩