Publications

Affichage de 8691 à 8700 sur 16170


  • Article dans une revue

Tunable dual-mode DFB laser for millimetre-wave signal generation

S. Ginestar, F. van Dijk, A. Accard, F. Poingt, F. Pommereau, L. Le Gouezigou, O. Le Gouezigou, F. Lelarge, B. Rousseau, J. Landreau, Jean-Pierre Vilcot, G.-H. Duan

Highly compact dual-mode semiconductor laser sources get more and more attention in different application fields such as radar, security and personal communication systems. When the two generated wavelengths are detected within the same photodetector, an electrical signal which frequency is the…

European Physical Journal: Applied Physics, 2011, 53 (3), pp.33609-1-5. ⟨10.1051/epjap/2011100065⟩. ⟨hal-00672783⟩

  • Communication dans un congrès

B(Al,Ga)N materials capability for advanced optic devices structures in the UV range

S. Gautier, M. Abid, T. Moudakir, G. Orsal, V. Ravindran, O. Naciri, A. Migan-Dubois, Z. Djebbour, David Troadec, A. Soltani, G. Patriarche, A. Ougazzaden

SPIE 2011, Jan 2011, San Francisco, United States. ⟨hal-00578877⟩

  • Article dans une revue

Deep structural analysis of novel BGaN material layers grown by MOVPE

S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal, K. Pantzas, David Troadec, A. Soltani, L. Largeau, O. Mauguin, A. Ougazzaden

BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional fluctuations were observed with XRD or STEM measurements. Photoluminescence at…

Journal of Crystal Growth, 2011, 315 (1), pp.288-291. ⟨10.1016/j.jcrysgro.2010.08.042⟩. ⟨hal-00554231⟩

  • Article dans une revue

Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth

W.H. Goh, G. Patriarche, P.L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A.A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, David Troadec, A. Soltani, A. Ougazzaden

Nanodots, nanowires, and semi-polar quantum well structures of GaN-based material have been grown by nano-selective area growth (NSAG). The growth evolution of the nanostructure has been studied. Cross-sectional transmission electron microscopy (TEM) shows that the nanostructures are free of…

Journal of Crystal Growth, 2011, 315 (1), pp.160-163. ⟨10.1016/j.jcrysgro.2010.08.053⟩. ⟨hal-00554254⟩

  • Brevet

Microsystème de génération d'un jet synthétique, procédé de fabrication et dispositif de contrôle d'écoulement correspondants

L. Gimeno-Monge, Abdelkrim Talbi, Philippe Pernod, A. Merlen, Vladimir Preobrazhensky, R. Viard

N° de brevet: FR2947813 (A1). 2011. ⟨hal-00559182⟩