Publications

• Communication dans un congrès

Extrinsic base resistance optimization in DPSA-SEG SiGe:C HBTs

Elodie Canderle, Pascal Chevalier, A. Montagne, L. Moynet, Gregory Avenier, Pierre Boulenc, M. Buczko, Y. Carminati, J. Rosa, Christophe Gaquière, Alain Chantre

The influence of an additional annealing in the base/emitter module fabrication of state-of-the-art DPSA-SEG SiGe:C HBTs is studied in this paper. The objective of this annealing is to reduce the extrinsic base resistance R Bx which in previous studies appeared to limit f MAX of DPSA-SEG SiGe HBTs…

26th IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2012, Sep 2012, Portland, OR, United States. pp.1-4, ⟨10.1109/BCTM.2012.6352650⟩. ⟨hal-00801192⟩

• Article dans une revue

Effect of electrode materials on the scaling behavior of energy density in Pb(Zr0.96Ti0.03)Nb0.01O3 antiferroelectric films

J. Ge, G. Pan, Denis Remiens, Y. Chen, F. Cao, X.L. Dong, G.S. Wang

Applied Physics Letters, 2012, 101, pp.112905-1-3. ⟨10.1063/1.4752726⟩. ⟨hal-00788341⟩

• Article dans une revue

Low power sessile droplets actuation via modulated surface acoustic waves

Michael Baudoin, Philippe Brunet, Olivier Bou Matar, Etienne Herth

Low power actuation of sessile droplets is of primary interest for portable or hybrid lab-on-a-chip and harmless manipulation of biofluids. In this paper, we show that the acoustic power required to move or deform droplets via surface acoustic waves can be substantially reduced through the forcing…

Applied Physics Letters, 2012, 100, pp.154102-1-4. ⟨10.1063/1.3701725⟩. ⟨hal-00787356⟩

• Communication dans un congrès

Holistic modelling of heterogeneous embedded systems with high multi-discipline feedback : application to a precollision mitigation braking system

A. Leveque, François Pecheux, M.M. Louerat, H. Aboushady, F. Cenni, S. Scotti, A. Massouri, Laurent Clavier

Design, Automation & Test in Europe, DATE 2012, 2012, Dresden, Germany. pp.739-744. ⟨hal-00801059⟩

• Communication dans un congrès

Microwave performances of 100nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate

J. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801047⟩

• Communication dans un congrès

[Invited] High frequency characterization of nanotechnologies : toward new instrumentations and techniques

Gilles Dambrine, Kamel Haddadi, Christophe Gaquière, T. Lasri, Y. Tagro, L. Poulain, A. Pottrain

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-4. ⟨hal-00801042⟩

• Article dans une revue

Influence of a superficial field of residual stress on the propagation of surface waves - Applied to the estimation of the depth of the superficial stressed zone

Marc Duquennoy, Mohammadi Ouaftouh, J. Deboucq, Jean-Etienne Lefebvre, Frédéric Jenot, Mohamed Ourak

Applied Physics Letters, 2012, 101, pp.234104-1-3. ⟨10.1063/1.4768434⟩. ⟨hal-00790364⟩

• Communication dans un congrès

Vibrational distribution function of N2(C3Πu, v') state in N2-Ar discharge created by a RF helical coupling device

A. Annusova, C. Foissac, J. Kristof, P. Veis, P. Supiot

XXI Europhysics Conference on Atomic and Molecular Physics of Ionized Gases, ESCAMPIG 2012, 2012, Viana do Castelo, Portugal. paper P1.1.10, 1-2. ⟨hal-00802624⟩

• Communication dans un congrès

Fabrication, characterization and analysis of AlN thin films grown on HR-silicon by MBE and PVD methods

N. Defrance, Marie Lesecq, F. Lecourt, Virginie Hoel, Jean-Claude de Jaeger

11th Expert Meeting on Evaluation & Control of Coumpound Semiconductor Materials and Technologies, EXMATEC 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801190⟩

• Communication dans un congrès

Characterization and analysis of different surface passivation for AlGaN/GaN HEMTs

F. Lecourt, N. Defrance, S. Rennesson, Virginie Hoel, Y. Cordier, Jean-Claude de Jaeger

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801154⟩