Publications

• Article dans une revue

Direct characterization of native chemical ligation of peptides on hydrogenated silicon nanowires

N. Dendane, O. Melnyk, T. Xu, B. Grandidier, Rabah Boukherroub, D. Stievenard, Yannick Coffinier

Langmuir, 2012, 28, pp.13336-13344. ⟨10.1021/la3030217⟩. ⟨hal-00787470⟩

• Article dans une revue

Investigation of indium nitride for micro-nanotechnology

Anisha Gokarna, Jean-Francois Lampin, Dominique Vignaud, El Hadj Dogheche, Didier Decoster, Sandra Ruffenach, Olivier Briot, Matthieu Moret

We present a study of non–intentionally doped InN epilayers directly grown on sapphire substrate by metal organic chemical vapour deposition (MOCVD) technique. Structural and optical characterisations of this sample have been conducted by SEM, temperature–dependent photoluminescence and time…

International Journal of Nanotechnology, 2012, 9 (10-12), pp.900-906. ⟨10.1504/IJNT.2012.049454⟩. ⟨hal-00787438⟩

• Article dans une revue

A 7-bit 18th order 9.6 GS/s FIR up-sampling filter for high data rate 60-GHz wireless transmitters

J. Muller, B. Stefanelli, A. Frappe, L. Ye, A. Cathelin, A. Niknejad, A. Kaiser

IEEE Journal of Solid-State Circuits, 2012, 47, pp.1743-1756. ⟨10.1109/JSSC.2012.2191677⟩. ⟨hal-00787386⟩

• Article dans une revue

SYMONE project : synaptic molecular networks for bio-inspired information processing

G. Wendin, D. Vuillaume, M. Calame, S. Yitzchaik, C. Gamrat, G. Cuniberti, V. Beiu

International Journal of Unconventional Computing, 2012, 8, pp.325-332. ⟨hal-00787374⟩

• Communication dans un congrès

THz metamaterials and metasurfaces

Gabriel Moreno, Haian Sebai, Serkan Kaya, Abbas Ghaddar, Abdallah Chahadih, Ibrahim Türer, Mokhtar Zehar, Guillaume Ducournau, Jean-Francois Lampin, Renaud Leturcq, Tahsin Akalin

International Symposium on Frontiers in THz Technology, FTT 2012, 2012, Nara, Japan. ⟨hal-00820996⟩

• Article dans une revue

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, Jeramy Dickerson, Paul L. Voss, Marie-Antoinette Di Forte-Poisson, Jean-Claude de Jaeger, Abdallah Ougazzaden

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects:…

Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩. ⟨hal-00787871⟩

• Article dans une revue

AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs

L. Desplanque, S. El Kazzi, J.L. Codron, Y. Wang, P. Ruterana, G. Moschetti, J. Grahn, X. Wallart

Applied Physics Letters, 2012, 100, pp.262103-1-4. ⟨10.1063/1.4730958⟩. ⟨hal-00786990⟩

• Communication dans un congrès

Wafer-level BCB cap packaging of integrated MEMS switches with MMIC

S. Seok, J.G. Kim, M. Fryziel, N. Rolland, P.A. Rolland, H. Maher, W. Simon, R. Baggen

60th IEEE MTT-S International Microwave Symposium, IMS 2012, 2012, Montréal, Canada. pp.1-3, ⟨10.1109/MWSYM.2012.6258270⟩. ⟨hal-00801069⟩

• Communication dans un congrès

Transport properties of strained silicon nanowires

Y.M. Niquet, C. Delerue, V.H. Nguyen, Christophe Krzeminski, F. Triozon

42nd European Solid-State Device Research Conference, ESSDERC 2012, 2012, Bordeaux, France. pp.session C3L-G, 290-293, ⟨10.1109/ESSDERC.2012.6343390⟩. ⟨hal-00801132⟩

• Communication dans un congrès

AlN/GaN-on-silicon devices for millimeter wave high power/low noise applications

F Medjdoub, Malek Zegaoui, Y. Tagro, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

6th Space Agency - MOD Workshop on Wideband Gap Semiconductors and Components, 2012, Noordwijk, Netherlands. pp.CD-ROM, 1-8. ⟨hal-00801061⟩