Publications

• Article dans une revue

Initial stages of graphitization on SiC(000-1), as studied by phase atomic force microscopy

F.J. Ferrer, E. Moreau, D. Vignaud, D. Deresmes, S. Godey, X. Wallart

The initial stages of graphitization on 4H- and 6H-SiC (000-1) under ultrahigh vacuum at temperatures of 1125–1175°C have been studied by atomic force microscopy (AFM), X-ray photoemission spectroscopy and reflected high energy electron diffraction. A progressive coverage of the surface by graphene…

Journal of Applied Physics, 2011, 109 (5), pp.054307-1-6. ⟨10.1063/1.3560896⟩. ⟨hal-00577059⟩

• Article dans une revue

Phase-control in two-dimensional phononic crystals

N. Swinteck, S. Bringuier, J.F. Robillard, Jerome O. Vasseur, Anne-Christine Hladky, K. Runge, P.A. Deymier

A theoretical model is developed to ascertain the necessary band structure and equi-frequency contour (EFC) features of two-dimensional phononic crystals (PCs) for the realization of phase control between propagating acoustic waves. Two different PCs, a square array of cylindrical polyvinylchloride…

Journal of Applied Physics, 2011, 110 (7), pp.074507. ⟨10.1063/1.3641634⟩. ⟨hal-00639810⟩

• Article dans une revue

A silicon nanowire ion-sensitive field-effect-transistor with elementary charge sensitivity

N. Clement, K. Nishiguchi, Jean-François Dufrêche, David Guérin, A. Fujiwara, D. Vuillaume

We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nanoscale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements also show that ionic strength of the surrounding electrolyte…

Applied Physics Letters, 2011, 98, pp.014104-3. ⟨10.1063/1.3535958⟩. ⟨hal-00572646⟩

• Communication dans un congrès

An alternative numerical spectral method applied to the design of naval structures against UNDEX loading

G. Vanderborck, P. Mosbah, H. Callewaert

82nd Shock and Vibration Symposium, 2011, Baltimore, MD, United States. ⟨hal-00807114⟩

• Communication dans un congrès

Spatial evolution of radio channel modelled with stable random processes

N. Azzaoui, Laurent Clavier

1st International Workshop on Propagation and Channel Modeling for Next-Generation Wireless Networks, IWPCM 2011, 2011, Lyon, France. ⟨hal-00807129⟩

• Communication dans un congrès

Polytypism in III-V nanowires

S. Lehmann, K.A. Dick, J. Johansson, P. Caroff, J. Bolinsson, M.E. Messing, D. Jacobsson, K. Deppert, L. Samuelson

3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, SemiconNano 2011, 2011, Traunkirchen, Austria. ⟨hal-00807148⟩

• Communication dans un congrès

Towards cost-effective millimeter wave high power GaN devices

F Medjdoub

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. ⟨hal-00807130⟩

• Communication dans un congrès

Le réseau RENATECH des grandes centrales de technologie du CNRS

A. Cappy

4ème Colloque du Laboratoire International Associé en Nanotechnologies et Nanosystèmes, 2011, Allevard-Les-Bains, France. ⟨hal-00807125⟩

• Communication dans un congrès

A 7-bit 18th order 9.6 GS/s FIR filter for high data rate 60-GHz wireless communications

J. Muller, B. Stefanelli, A. Frappe, L. Ye, A. Cathelin, A. Niknejad, A. Kaiser

37th European Solid-State Circuits Conference, ESSCIRC 2011, 2011, Helsinki, Finland. paper ID 5264, 67-70. ⟨hal-00800004⟩

• Communication dans un congrès

TCAD study of the detection mechanisms in silicon nanoribbon-based gas sensors

L. Silvestri, S. Reggiani, V. Passi, F. Ravaux, Emmanuel Dubois, J.P. Raskin, S. Clavaguera, A. Carella, C. Celle, J.P. Simonato

41st European Solid-State Device Research Conference, ESSDERC 2011, 2011, Helsinki, Finland. paper ID 5173, 131-134. ⟨hal-00800024⟩