Publications

• Article dans une revue

A 10 Gb/s 45 mW adaptive 60 GHz baseband in 65 nm CMOS

C. Thakkar, L. Kong, K. Jung, A. Frappe, E. Alon

IEEE Journal of Solid-State Circuits, 2012, 47, pp.952-968. ⟨10.1109/JSSC.2012.2184651⟩. ⟨hal-00787383⟩

• Article dans une revue

Electromechanical transconductance properties of a GaN MEMS resonator with fully integrated HEMT transducers

M. Faucher, Y. Cordier, M. Werquin, L. Buchaillot, Christophe Gaquière, D. Theron

Journal of Microelectromechanical Systems, 2012, 21, pp.370-378. ⟨10.1109/JMEMS.2011.2179010⟩. ⟨hal-00787408⟩

• Communication dans un congrès

Integrative Technology-Based Approach of Microelectromechanical Systems (MEMS) for Biosensing Applications

Liviu Nicu, Thomas Alava, Thierry Leichle, Daisuke Saya, Jean Bernard Pourciel, Fabrice Mathieu, Caroline Soyer, Denis Remiens, Cédric Ayela, Karsten Haupt

EMBC'12, 2012, San Diego, United States. 4 p. ⟨hal-00865903⟩

• Article dans une revue

Dielectric, ferroelectric and piezoelectric properties of 100-oriented Pb0.4Sr0.6TiO3 thin film sputtered on LaNiO3 electrode

X. Lei, Denis Remiens, N. Sama, Y. Chen, C.L. Mao, X.L. Dong, G.S. Wang

Journal of Crystal Growth, 2012, 347, pp.15-18. ⟨10.1016/j.jcrysgro.2012.03.026⟩. ⟨hal-00788337⟩

• Article dans une revue

435mS/mm transconductance for AlGaN/GaN HEMTs on HR-Si substrate with optimised gate-source spacing

S. Bouzid, H. Maher, N. Defrance, Virginie Hoel, F. Lecourt, M. Renvoise, Jean-Claude de Jaeger, P. Frijlink

Electronics Letters, 2012, 48, pp.69-71. ⟨10.1049/el.2011.3605⟩. ⟨hal-00787867⟩

• Article dans une revue

Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques

T. Xu, K.A. Dick, S.R. Plissard, T.H. Nguyen, Y. Makoudi, Maxime Berthe, J.P. Nys, X. Wallart, B. Grandidier, P. Caroff

Nanotechnology, 2012, 23, pp.095702-1-9. ⟨10.1088/0957-4484/23/9/095702⟩. ⟨hal-00787477⟩

• Autre publication scientifique

Caractérisations électriques et analyse de la méthode ''transition voltage spectroscopy'' sur les jonctions moléculaires à base de molécules alkyles

Guillaume Ricoeur

2012. ⟨hal-00799287⟩

• Article dans une revue

Boron distribution in the core of Si nanowire grown by chemical vapor deposition

W. Chen, V.G. Dubrovskii, X.L. Liu, T. Xu, Rodrigue Lardé, J.P. Nys, B. Grandidier, D. Stievenard, G. Patriarche, Philippe Pareige

The boron dopant distribution in Si nanowires grown by the Au-catalyzed chemical vapor deposition is characterized by laser-assisted atom probe tomography. A convenient and an effective method for performing the atom probe tomography of an individual nanowire is developed. Using this technique, we…

Journal of Applied Physics, 2012, 111 (9), pp.094909. ⟨10.1063/1.4714364⟩. ⟨hal-00787433⟩

• Communication dans un congrès

Atomistic calculations of the mobility in ultimate Si (Ge) nanowires and carbon nanotubes

Y.M. Niquet, J. Li, V.H. Nguyen, F. Triozon, W. Zhang, Christophe Krzeminski, L. Genovese, D. Rideau, C. Delerue

6th International Meeting on Molecular Electronics, ElecMol'12, 2012, Grenoble, France. ⟨hal-00797753⟩

• Communication dans un congrès

Fabrication de composants passifs par impression jet d'encre - Caractérisation RF

W. Wei, Thomas Dargent, Virginie Hoel, H. Happy

12èmes Journées Pédagogiques CNFM, 2012, Saint Malo, France. ⟨hal-00797331⟩