Publications

• Communication dans un congrès

Etude des performances en puissance des TBH Si/SiGe pour les applications millimétriques

A. Pottrain, T. Lacave, D. Gloria, P. Chevalier, D. Ducatteau, Sylvie Lepilliet, Christophe Gaquière

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. pp.6E2, 1-4. ⟨hal-00603137⟩

• Article dans une revue

Dielectric properties at microwaves frequencies of (Ni, Ti, La, Mg)-doped Ba0.3Sr0.7TiO3 thin films deposited on high-resistivity silicon substrates

Freddy Ponchel, Denis Remiens, J. Midy, Jean-François Legier, Caroline Soyer, T. Lasri, G. Guegan

Journal of the American Ceramic Society, 2011, 94, pp.1661-1663. ⟨10.1111/j.1551-2916.2011.04546.x⟩. ⟨hal-00603030⟩

• Article dans une revue

Above 600 mS/mm transconductance with 2.3 A/mm drain current density AlN/GaN high electron mobility transistors grown on silicon

F Medjdoub, Malek Zegaoui, Nicolas Waldhoff, B. Grimbert, N. Rolland, Paul-Alain Rolland

AlN/GaN high-electron-mobility transistors (HEMTs) capped with an in-situ grown SiN have been successfully developed on 100mm Si substrates. A unique combination of maximum output current density exceeding 2A/mm and a record extrinsic transconductance above 600 mS/mm has been reached, which is well…

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4 (6), pp.064106-1-3. ⟨10.1143/APEX.4.064106⟩. ⟨hal-00603010⟩

• Article dans une revue

Band gap engineering in simultaneous phononic and photonic crystal slabs

Bahram Djafari-Rouhani, Yan Pennec, El Houssaine El Boudouti, Jerome O. Vasseur, Youssef El Hassouani, C. Li, Abdellatif Akjouj, Driss Bria

We discuss the simultaneous existence of phononic and photonic band gaps in two types of phononic crystals slabs, namely periodic arrays of nanoholes in a Si membrane and of Si nanodots on a SiO2 membrane. In the former geometry, we investigate in detail both the boron nitride lattice and the…

Applied physics. A, Materials science & processing, 2011, 103, pp.735-739. ⟨10.1007/s00339-010-6207-x⟩. ⟨hal-00603012⟩

• Article dans une revue

Fabrication of AD/DA microfluidic converter using deep reactive ion etching of silicon and low temperature wafer bonding

C. Wu, F. Bendriaa, F. Brunelle, V. Senez

Microelectronic Engineering, 2011, 88, pp.1878-1883. ⟨10.1016/j.mee.2010.12.001⟩. ⟨hal-00795913⟩

• Article dans une revue

Use of catalytic oxidation and dehydrogenation of hydrocarbons reactions to highlight improvement of heat transfer in catalytic metallic foams

A. Löfberg, A. Essakhi, S. Paul, Y. Swesi, M.L. Zanota, V. Meille, I. Pitault, P. Supiot, B. Mutel, V. Le Courtois, E. Bordes-Richard

Chemical Engineering Journal, 2011, 176-177, pp.49-56. ⟨10.1016/j.cej.2011.04.064⟩. ⟨hal-00795915⟩

• Article dans une revue

Patterned L10-FePt for polarization of magnetic films

Yannick Dusch, Nicolas Tiercelin, A. Klimov, V. Rudenko, Y. Ignatov, S. Hage-Ali, Philippe Pernod, Vladimir Preobrazhensky

In various micro and nanosystems applications comprising magnetic films, the polarizing field still needs to be integrated. We hereby present a solution for the self biasing of magnetic films using micropatterned permanent magnets. Micromagnetic simulations were used as a designing and optimization…

Journal of Applied Physics, 2011, 109, pp.07A720-1-3. ⟨10.1063/1.3561172⟩. ⟨hal-00591347⟩

• Article dans une revue

Investigation of the anisotropic strain relaxation in GaSb islands on GaP

Y. Wang, P. Ruterana, H.P. Lei, Jie Chen, S. Kret, S. El Kazzi, L. Desplanque, X. Wallart

Journal of Applied Physics, 2011, 110, pp.043509-1-8. ⟨10.1063/1.3622321⟩. ⟨hal-00639828⟩

• Article dans une revue

Influence of a localized defect on acoustic field correlation in a reverberant medium

Najib Abou Leyla, Emmanuel Moulin, Jamal Assaad

Journal of Applied Physics, 2011, 110, pp.084906-1-8. ⟨10.1063/1.3652907⟩. ⟨hal-00639940⟩

• Article dans une revue

Initial stages of graphitization on SiC(000-1), as studied by phase atomic force microscopy

F.J. Ferrer, E. Moreau, D. Vignaud, D. Deresmes, S. Godey, X. Wallart

The initial stages of graphitization on 4H- and 6H-SiC (000-1) under ultrahigh vacuum at temperatures of 1125–1175°C have been studied by atomic force microscopy (AFM), X-ray photoemission spectroscopy and reflected high energy electron diffraction. A progressive coverage of the surface by graphene…

Journal of Applied Physics, 2011, 109 (5), pp.054307-1-6. ⟨10.1063/1.3560896⟩. ⟨hal-00577059⟩