Publications

• Communication dans un congrès

[Invited] AlSb/InAs HEMTs : an option for performance/power trade-off ?

Yannick Roelens

European Microwave Week, EuMIC, Workshop W07 - High-performance narrow-bandgap HEMT technology for advanced microwave front-ends : towards the end of the roadmap ?, 2011, Manchester, United Kingdom. ⟨hal-00807120⟩

• Proceedings/Recueil des communications

Physics–Mathematics Relationship. Historical and Epistemological notes

Raffaele Pisano

Proceedings of the ESU 6 European Summer University History And Epistemology In Mathematics, Verlag Holzhausen GmbH–Holzhausen Publishing Ltd, pp.457-452, 2011, 978-3-85493-206-2. ⟨hal-04513891⟩

• Article dans une revue

Functionalization of silicon nanowires for specific sensing

V. Passi, Emmanuel Dubois, C. Celle, S. Clavaguera, J.P. Simonato, J.P. Raskin

Thanks to their large surface-to-volume ratio, silicon nanowires (Si NWs) are extremely sensitive to all phenomena which could alter their surface potential and charge distribution. Those surface variations lead to a change of the Si NWs equivalent conductance. The use of the output conductance of…

ECS Transactions, 2011, 35, pp.313-318. ⟨10.1149/1.3570811⟩. ⟨hal-00591351⟩

• Communication dans un congrès

Silicon High Frequency Test Structures Improvement for Millimeter Wave Varactors Characterization Optimization and Modeling

F. Sonnerat, R. Debroucke, Y. Morandini, D. Gloria, Jean-Daniel Arnould

Silicon High Frequency Test Structures Improvement for Millimeter Wave Varactors Characterization Optimization and Modeling". IEEE International Conference on Microelectronic Test Structures (ICMTS), Apr 2011, Amsterdam, Netherlands. ⟨hal-01068863⟩

• Article dans une revue

Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate

F Medjdoub, Malek Zegaoui, N. Rolland, Paul-Alain Rolland

High quality AlN/GaN heterostructures grown on silicon substrate are demonstrated. It is found that high carrier concentration can be achieved whereas circular diodes showed a low leakage current up to 200 V reverse bias. 200 nm gate length AlN/GaN transistors exhibited a drain current density of 1…

Applied Physics Letters, 2011, 98 (22), pp.223502-1-3. ⟨10.1063/1.3595943⟩. ⟨hal-00603008⟩

• Communication dans un congrès

SiN/AlN/GaN : a promising heterostructure for millimeter wave applications

F Medjdoub, Malek Zegaoui, N. Rolland, Paul-Alain Rolland

35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, May 2011, Catania, Italy. pp.39-40. ⟨hal-00603112⟩

• Communication dans un congrès

[Invited] Single electron and spin transport in semiconductor nanowire quantum dots

Renaud Leturcq

IAP Workshop on Semiconductor Quantum Dots and Nanowires, 2011, Louvain-la-Neuve, Belgium. ⟨hal-00986881⟩

• Article dans une revue

Size-dependent catalytic and melting properties of platinum-palladium nanoparticles

G. Guisbiers, G. Abudukelimu, D. Hourlier

While nanocatalysis is a very active field, there have been very few studies in the size/shape-dependent catalytic properties of transition metals from a thermodynamical approach. Transition metal nanoparticles are very attractive due their high surface to volume ratio and their high surface energy…

Nanoscale Research Letters, 2011, 6, pp.396-1-5. ⟨10.1186/1556-276X-6-396⟩. ⟨hal-00639824⟩

• Article dans une revue

Impact of chain length, temperature, and humidity on the growth of long alkyltrichlorosilane self-assembled monolayers

S. Desbief, L. Patrone, D. Goguenheim, David Guérin, D. Vuillaume

Physical Chemistry Chemical Physics, 2011, 13, pp.2870-2879. ⟨10.1039/c0cp01382j⟩. ⟨hal-00572642⟩

• Article dans une revue

Dielectric dispersion of BaSrTiO3 thin film from centimeter to submillimeter wavelengths

Grégory Houzet, Karine Blary, Sylvie Lepilliet, Didier Lippens, Ludovic Burgnies, Gabriel Vélu, Jean-Claude Carru, Edwin Nguema Agnandji, Patrick Mounaix

The dielectric dispersion of ferroelectric BaxSr1-xTiO3 (BST) thin film in a paraelectric phase was characterized from centimeter to submillimeter wavelengths. To this aim, interdigitated capacitors were patterned on a micrometer scale onto a BST layer with a barium concentration of 0.5 and were…

Journal of Applied Physics, 2011, 109 (1), pp.014116. ⟨10.1063/1.3531534⟩. ⟨hal-00572636⟩