Publications

Affichage de 9091 à 9100 sur 16173


  • Communication dans un congrès

[Invited] Epitaxial growth of controlled III-V nanowires : materials for transport physics

P. Caroff

IAP Workshop on Semiconductor Quantum Dots and Nanowires, 2011, Louvain-la-Neuve, Belgium. ⟨hal-00807146⟩

  • Communication dans un congrès

Améliorer les photomélangeurs THz

P. Latzel

14èmes Journées Nationales du Réseau Doctoral de Micro et Nanoélectronique, JNRDM 2011, 2011, Cachan, France. pp.1-3. ⟨hal-00806719⟩

  • Communication dans un congrès

Optical and magneto-optical properties of γ-Fe2O3 magnetic fluids

A. Klimov, Philippe Pernod, Vladimir Preobrazhensky, Y. Pylnov, V. Rudenko, V. Dupuis, S. Neveu

International Conference "Functional Materials", ICFM 2011, 2011, Partenit, Crimea, Ukraine. ⟨hal-00807185⟩

  • Communication dans un congrès

Strain relaxation of GaSb islands on GaP and GaAs substrates for highmobility AlSb/InAs heterostructures

S. El Kazzi, L. Desplanque, X. Wallart, Y. Wang, P. Ruterana

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00799994⟩

  • Communication dans un congrès

Transmission electron microscopy of misfit dislocation and strain relaxation in lattice mismatched III-V heterostructures versus substrate surface treatment

Y. Wang, P. Ruterana, L. Desplanque, S. El Kazzi, X. Wallart

Materials Research Society Spring Meeting, MRS Spring 2011, Symposium D : Compound semiconductors for energy applications and environmental sustainability, 2011, San Francisco, CA, United States. pp.143-148, ⟨10.1557/opl.2011.841⟩. ⟨hal-00799993⟩

  • Communication dans un congrès

First AlN/GaN HEMTs power measurement at 18 GHz on silicon substrate

F Medjdoub, Malek Zegaoui, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

AlN/GaN heterostructure is an ideal candidate to push the limits of microwave GaN-based devices owing to the maximum theoretical spontaneous and piezoelectric difference between the epitaxial AlN barrier and the underlying GaN layer. If the tricky growth conditions of this binary can be controlled…

69th Device Research Conference, DRC 2011, Jun 2011, Santa Barbara, CA, United States. pp.219-220, ⟨10.1109/DRC.2011.5994506⟩. ⟨hal-00799973⟩

  • Communication dans un congrès

Assessment of III-V MOSFET architectures for low power applications using static and dynamic numerical simulation

Minghua Shi, J. Saint-Martin, A. Bournel, D. Querlioz, P. Dollfus, J.J. Mo, Nicolas Wichmann, L. Desplanque, X. Wallart, Francois Danneville, S. Bollaert

37th IEEE International SOI Conference, SOI 2011, 2011, Tempe, AZ, United States. pp.1-2, ⟨10.1109/SOI.2011.6081701⟩. ⟨hal-00799795⟩

  • Communication dans un congrès

Recent developments in amorphous sputterred ITO thin films acting as transparent front contact layer of CIGS solar cells for energy autonomous wireless microsystems

Thomas Aviles, C. Lethien, Malek Zegaoui, Jean-Pierre Vilcot, Floriane Leroy, Pascal Roussel, Nathalie Rolland, Paul-Alain Rolland

In this paper, we report on the study of electrical, optical and structural properties of RF sputtered Indium Tin Oxide (ITO) thin films at room temperature. These films are dedicated to act as front electrode of CIGS solar microcells and shall so compel with the electrical and optical criteria…

37th IEEE Photovoltaic Specialist Conference, PVSC 2011, Jun 2011, Seattle, WA, United States. pp.1235-1237, ⟨10.1109/PVSC.2011.6186180⟩. ⟨hal-00800073⟩

  • Communication dans un congrès

Spectral regrowth analysis in wideband polar architectures applied to software defined radio

A. Werquin, A. Frappe, J. Muller, A. Kaiser

9th IEEE International New Circuits and Systems Conference, NEWCAS 2011, 2011, Bordeaux, France. pp.305-308, ⟨10.1109/NEWCAS.2011.5981316⟩. ⟨hal-00800023⟩