Publications
Affichage de 9111 à 9120 sur 16075
Guided waves in functionally graded viscoelastic plates
J.G. Yu, F.E. Ratolojanahary, Jean-Etienne Lefebvre
Composite Structures, 2011, 93, pp.2671-2677. ⟨10.1016/j.compstruct.2011.06.009⟩. ⟨hal-00639935⟩
Exceptional plasticity of silicon nanobridges
T. Ishida, F. Cleri, K. Kakushima, M. Mita, T. Sato, M. Miyata, N. Itamura, J. Endo, H. Toshiyoshi, N. Sasaki, D. Collard, H. Fujita
Nanotechnology, 2011, 22, pp.355704-1-6. ⟨10.1088/0957-4484/22/35/355704⟩. ⟨hal-00639885⟩
[Invited paper] Nonlinear elasticity in nanostructured materials
L. Colombo, S. Giordano
Reports on Progress in Physics, 2011, 74, pp.116501-1-35. ⟨10.1088/0034-4885/74/11/116501⟩. ⟨hal-00639832⟩
Unit cell structure of crystal polytypes in InAs and InSb nanowires
D. Kriegner, C. Panse, B. Mandl, K.A. Dick, M. Keplinger, J.M. Persson, P. Caroff, D. Ercolani, L. Sorba, F. Bechstedt, J. Stangl, G. Bauer
Nano Letters, 2011, 11, pp.1483-1489. ⟨10.1021/nl1041512⟩. ⟨hal-00591318⟩
Structural, ferroelectric and dielectric properties of In2O3:Sn (ITO) on PbZr0.53 Ti 0.47O3 (PZT)/Pt and annealing effect
L. Kerkache, A. Layadi, El Hadj Dogheche, Denis Remiens
Journal of Alloys and Compounds, 2011, 509, pp.6072-6076. ⟨10.1016/j.jallcom.2011.03.022⟩. ⟨hal-00591328⟩
Wurtzite-zincblende superlattices in InAs nanowires using a supply interruption method
J. Bolinsson, P. Caroff, B. Mandl, K.A. Dick
Nanotechnology, 2011, 22, pp.265606-1-10. ⟨10.1088/0957-4484/22/26/265606⟩. ⟨hal-00597079⟩
Small signal and HF noise performance of 45nm CMOS technology in mmW range
L. Poulain, N. Waldhoff, D. Gloria, Francois Danneville, Gilles Dambrine
IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2011, 2011, Baltimore, MD, United States. pp.1-4, ⟨10.1109/RFIC.2011.5940646⟩. ⟨hal-00799962⟩
Low frequency transconductance and output resistance dispersion of epitaxial graphene nanoribbon-based field effect transistors
G. Aroshvili, N. Meng, D. Vignaud, D. Pavlidis, H. Happy
69th Device Research Conference, DRC 2011, 2011, Santa Barbara, CA, United States. pp.149-150, ⟨10.1109/DRC.2011.5994461⟩. ⟨hal-00799968⟩
100nm-gate-length In0.47Ga0.53As multi-gate MOSFET : fabrication and characterisation
J.J. Mo, Nicolas Wichmann, Yannick Roelens, M. Zaknoune, L. Desplanque, X. Wallart, S. Bollaert
23rd International Conference on Indium Phosphide and Related Materials, IPRM 2011, 2011, Berlin, Germany. pp.1-4. ⟨hal-00799971⟩
Nanostructured PANI-based materials for sensor and molecular electronics applications
V.N. Bliznyuk, J.L. Wojkiewicz, S. Carquigny, N. El Kamchi, N. Redon, T. Lasri, A.A. Pud
International Conference on Organic Electronics, ICOE 2011, 2011, Rome, Italy. pp.78-79. ⟨hal-00800348⟩