Publications

• Article dans une revue

Beyond 100 GHz AlN/GaN HEMTs on silicon substrate

F Medjdoub, Malek Zegaoui, N. Rolland

A report is presented on high-speed 100nm AlN/GaN high-electron-mobility transistors (HEMTs) grown on (111) high-resistive silicon substrate. The device delivers an extrinsic peak transconductance gm=530mS/mm, a maximum current of 1.74A/mm, and current gain and maximum oscillation cutoff…

Electronics Letters, 2011, 47 (24), pp.1345-1346. ⟨10.1049/el.2011.3166⟩. ⟨hal-00783379⟩

• Article dans une revue

High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs

Vikram Passi, Florent Ravaux, Emmanuel Dubois, Simon Clavaguera, Alexandre Carella, Caroline Celle, Jean-Pierre Simonato, Luca Silvestri, Susanna Reggiani, Dominique Vuillaume, Jean-Pierre Raskin

—The top-down fabrication of doped p-type silicon-nanowired (NW) arrays and their application as gas detectors is presented. After surface functionalization with 3-(4-ethynyl-benzyl)-1, 5, 7-trimethyl-3-azabicyclo [3.3.1] nonane-7-methanol molecules, the wires were subjected to an organophosphorous…

IEEE Electron Device Letters, 2011, 32, pp.1-3. ⟨10.1109/LED.2011.2146750⟩. ⟨cea-01344105⟩

• Article dans une revue

X-ray combined analysis of fiber-textured and epitaxial Ba(Sr,Ti)O3 thin films deposited by radio frequency sputtering

Denis Remiens, L. Yang, Freddy Ponchel, Jean-François Legier, D. Chateigner, Gang Wang, X. Dong

Journal of Applied Physics, 2011, 109, pp.114106-1-11. ⟨10.1063/1.3592282⟩. ⟨hal-00603029⟩

• Communication dans un congrès

Assessment of III-V MOSFET architectures for low power applications using static and dynamic numerical simulation

Minghua Shi, J. Saint-Martin, A. Bournel, D. Querlioz, P. Dollfus, J.J. Mo, Nicolas Wichmann, L. Desplanque, X. Wallart, Francois Danneville, S. Bollaert

37th IEEE International SOI Conference, SOI 2011, 2011, Tempe, AZ, United States. pp.1-2, ⟨10.1109/SOI.2011.6081701⟩. ⟨hal-00799795⟩

• Communication dans un congrès

Anisotropic transport of InAs/AlSb heterostructures grown on InP substrates

G. Moschetti, H. Zhao, P.A. Nilsson, S. Wang, A. Kalabukhov, Gilles Dambrine, S. Bollaert, L. Desplanque, X. Wallart, J. Grahn

35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, 2011, Catania, Italy. pp.17-18. ⟨hal-00799700⟩

• Article dans une revue

Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

H.A. Nilsson, P. Caroff, E. Lind, M.E. Pistol, C. Thelander, L.E. Wernersson

Journal of Applied Physics, 2011, 110, pp.064510-1-4. ⟨10.1063/1.3633742⟩. ⟨hal-00639829⟩

• Chapitre d'ouvrage

Low frequency acoustic devices for viscoelastic complex media characterization

Georges Nassar

Beghi M.G. Acoustic waves - From microdevices to helioseismology, InTech, Chapter 10, 213-238, 2011, ISBN 978-953-307-572-3. ⟨hal-00799656⟩

• Autre publication scientifique

Tunneling spectroscopy of hetero-nanocrystals

Thanh Hai Nguyen

2011. ⟨hal-00799435⟩

• Autre publication scientifique

Développements de capacités variables en technologie silicium pour les applications RF et mmW

Romain Debroucke

2011. ⟨hal-00799451⟩

• Autre publication scientifique

Nano-système magnéto-électro-mécanique (NMEMS) ultra-basse consommation pour le traitement et le stockage de l'information

Yannick Dusch

2011. ⟨hal-00799399⟩