Publications

• Communication dans un congrès

First AlN/GaN HEMTs power measurement at 18 GHz on silicon substrate

F Medjdoub, Malek Zegaoui, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

AlN/GaN heterostructure is an ideal candidate to push the limits of microwave GaN-based devices owing to the maximum theoretical spontaneous and piezoelectric difference between the epitaxial AlN barrier and the underlying GaN layer. If the tricky growth conditions of this binary can be controlled…

69th Device Research Conference, DRC 2011, Jun 2011, Santa Barbara, CA, United States. pp.219-220, ⟨10.1109/DRC.2011.5994506⟩. ⟨hal-00799973⟩

• Communication dans un congrès

Strain relaxation of GaSb islands on GaP and GaAs substrates for highmobility AlSb/InAs heterostructures

S. El Kazzi, L. Desplanque, X. Wallart, Y. Wang, P. Ruterana

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00799994⟩

• Autre publication scientifique

Nano-système magnéto-électro-mécanique (NMEMS) ultra-basse consommation pour le traitement et le stockage de l'information

Yannick Dusch

2011. ⟨hal-00799399⟩

• Article dans une revue

Opening of simultaneous photonic and phononic band gap in two-dimensional square lattice periodic structure

Driss Bria, B. Assouar, Mourad Oudich, Yan Pennec, Jerome O. Vasseur, Bahram Djafari-Rouhani

We discuss two points related to the simultaneous existence of phononic and photonic band gaps in a two-dimensional crystal constituted by a square array of holes drilled in a matrix. In a first part, using the case of a sapphire sample in the microwave range, we show that in addition to the…

Journal of Applied Physics, 2011, 109 (1), pp.014507. ⟨10.1063/1.3530682⟩. ⟨hal-00579068⟩

• Article dans une revue

Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

H.A. Nilsson, P. Caroff, E. Lind, M.E. Pistol, C. Thelander, L.E. Wernersson

Journal of Applied Physics, 2011, 110, pp.064510-1-4. ⟨10.1063/1.3633742⟩. ⟨hal-00639829⟩

• Communication dans un congrès

Assessment of III-V MOSFET architectures for low power applications using static and dynamic numerical simulation

Minghua Shi, J. Saint-Martin, A. Bournel, D. Querlioz, P. Dollfus, J.J. Mo, Nicolas Wichmann, L. Desplanque, X. Wallart, Francois Danneville, S. Bollaert

37th IEEE International SOI Conference, SOI 2011, 2011, Tempe, AZ, United States. pp.1-2, ⟨10.1109/SOI.2011.6081701⟩. ⟨hal-00799795⟩

• Communication dans un congrès

Anisotropic transport of InAs/AlSb heterostructures grown on InP substrates

G. Moschetti, H. Zhao, P.A. Nilsson, S. Wang, A. Kalabukhov, Gilles Dambrine, S. Bollaert, L. Desplanque, X. Wallart, J. Grahn

35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, 2011, Catania, Italy. pp.17-18. ⟨hal-00799700⟩

• Article dans une revue

Unprecedented robust antiferromagnetism in fluorinated hexagonal perovskites

M. Sturza, H. Kabbour, S. Daviero-Minaud, D. Filimonov, K. Pokholok, Nicolas Tiercelin, F. Porcher, L. Aldon, O. Mentre

Journal of the American Chemical Society, 2011, 133, pp.10901-10909. ⟨10.1021/ja2028603⟩. ⟨hal-00639870⟩

• Article dans une revue

Development of interdigital transducer sensors for non-destructive characterization of thin films using high frequency Rayleigh waves

J. Deboucq, Marc Duquennoy, Mohammadi Ouaftouh, Frédéric Jenot, Julien Carlier, Mohamed Ourak

In this paper, Rayleigh waves were generated and studied over a broad frequency range (5–50 MHz) and from the dispersion phenomenon, two substrate on layer type-samples with thin layer thicknesses of 1 μm and 500 nm, respectively, were characterized. The originality in this paper is the use of…

Review of Scientific Instruments, 2011, 82, pp.064905-1-7. ⟨10.1063/1.3600797⟩. ⟨hal-00639936⟩

• Article dans une revue

Exceptional plasticity of silicon nanobridges

T. Ishida, F. Cleri, K. Kakushima, M. Mita, T. Sato, M. Miyata, N. Itamura, J. Endo, H. Toshiyoshi, N. Sasaki, D. Collard, H. Fujita

Nanotechnology, 2011, 22, pp.355704-1-6. ⟨10.1088/0957-4484/22/35/355704⟩. ⟨hal-00639885⟩