Publications

• Communication dans un congrès

Analysis of AlGaN/GaN epi-material on resistive Si(111) substrate for MMIC applications in millimeter wave range

F. Lecourt, Y. Douvry, N. Defrance, Virginie Hoel, Y. Cordier, Jean-Claude de Jaeger

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.33-36. ⟨hal-00549995⟩

• Article dans une revue

High-speed 1.3-µm p-i-n GaNAsSb/GaAs waveguide photodetector

Malek Zegaoui, Z. Xu, N. Saadsaoud, Kianhuan Tan, Wan Khai Loke, Satrio Wicaksono, Soon Fatt Yoon, Christiane Legrand, Didier Decoster, Jean Chazelas

The authors report the demonstration of high-speed GaNAsSb/GaAs p-i-n waveguide photodetector grown by molecular beam epitaxy technique. A 0.4-μm-thick GaNAsSb core layer with 3.3% of N and 8% of Sb for detection wavelength over 1.3 μm is sandwiched by GaAs and AlGaAs cladding layers. The device…

IEEE Electron Device Letters, 2010, 31 (7), pp.704-706. ⟨10.1109/LED.2010.2049563⟩. ⟨hal-00549006⟩

• Article dans une revue

Structured light fringe projection setup using optimized acousto-optic deflectors

Samuel Dupont, Jean-Claude Kastelik, Michel Pommeray

IEEE/ASME Transactions on Mechatronics, 2010, 15, pp.557-560. ⟨10.1109/TMECH.2010.2052627⟩. ⟨hal-00549025⟩

• Article dans une revue

Diameter dependence of the wurtzite-zinc blende transition in InAs nanowires

J. Johansson, K.A. Dick, P. Caroff, M.E. Messing, J. Bolinsson, K. Deppert, L. Samuelson

Journal of Physical Chemistry C, 2010, 114, pp.3837-3842. ⟨10.1021/jp910821e⟩. ⟨hal-00548709⟩

• Article dans une revue

Optically power supplied Gbit/s wireless hotspot using 1.55 µm THz photomixer and heterodyne detection at 200 GHz

Guillaume Ducournau, P. Szriftgiser, Denis Bacquet, Alexandre Beck, Tahsin Akalin, Emilien Peytavit, Mohammed Zaknoune, Jean-Francois Lampin

A wireless transmission system with a remote-supplied hotspot is demonstrated working up to gigabit data rates. The emission uses a 200 GHz carrier frequency, generated using an 1.55 µm photomixer composed of an unitravelling carrier photodiode monolithically integrated with a wide bandwidth…

Electronics Letters, 2010, 46, pp.1349-1350. ⟨10.1049/el.2010.2062⟩. ⟨hal-00548731⟩

• Article dans une revue

Faceted sidewalls of silicon nanowires : Au-induced structural reconstructions and electronic properties

T. Xu, J.P. Nys, A. Addad, O.I. Lebedev, A. Urbieta, B. Salhi, Maxime Berthe, B. Grandidier, D. Stievenard

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81, pp.115403-1-10. ⟨10.1103/PhysRevB.81.115403⟩. ⟨hal-00549070⟩

• Article dans une revue

60 GHz current gain cut-off frequency graphene nanoribbon FET

N. Meng, F.J. Ferrer, D. Vignaud, Gilles Dambrine, H. Happy

International Journal of Microwave and Wireless Technologies, 2010, 2, pp.441-444. ⟨10.1017/S175907871000070X⟩. ⟨hal-00548564⟩

• Article dans une revue

A 60 GHz power amplifier with 14.5 dBm saturation power and 25% peak PAE in CMOS 65 nm SOI

A. Siligaris, Y. Hamada, C. Mounet, C. Raynaud, B. Martineau, N. Deparis, N. Rolland, M. Fukaishi, P. Vincent

IEEE Journal of Solid-State Circuits, 2010, 45, pp.1286-1294. ⟨10.1109/JSSC.2010.2049456⟩. ⟨hal-00548603⟩

• Article dans une revue

(Multi)exciton dynamics and exciton polarizability in colloidal InAs quantum dots

Joep J. H. Pijpers, M.T.W. Milder, C. Delerue, Mischa Bonn

We report steady state and dynamic properties of (multi)excitons in InAs quantum dots using femtosecond time-resolved transient absorption and time-resolved terahertz spectroscopy. The polarizability of confined excitons in the ground state is found to be of the order of 104 Å3, increasing sharply…

Journal of Physical Chemistry C, 2010, 114 (14), pp.6318-6324. ⟨10.1021/jp911948z⟩. ⟨hal-00549022⟩

• Communication dans un congrès

Backgate bias and stress level impact on giant piezoresistance effect in thin silicon films and nanowires

V. Passi, J.P. Raskin, F. Ravaux, Emmanuel Dubois

23rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2010, 2010, China. pp.464-467, ⟨10.1109/MEMSYS.2010.5442464⟩. ⟨hal-00549973⟩