Publications

Affichage de 9831 à 9840 sur 16256


  • Article dans une revue

Gold-free growth of GaAs nanowires on silicon : arrays and polytypism

S.R. Plissard, K. A. Dick, G. Larrieu, S. Godey, A. Addad, X. Wallart, P. Caroff

Nanotechnology, 2010, 21, pp.385602-1-8. ⟨10.1088/0957-4484/21/38/385602⟩. ⟨hal-00548717⟩

  • Article dans une revue

Computer simulation of disordered structures and nanosystems : an atomic-scale view

C. Massobrio, F. Cleri, R. Kozubski

Solid State Sciences, 2010, 12, pp.155-156. ⟨10.1016/j.solidstatesciences.2010.01.016⟩. ⟨hal-00549045⟩

  • Article dans une revue

AlGaN/GaN HEMT on (111) single crystalline diamond

M. Alomari, A. Dussaigne, D. Martin, N. Grandjean, Christophe Gaquière, E. Kohn

Electronics Letters, 2010, 46, pp.299-300. ⟨10.1049/el.2010.2937⟩. ⟨hal-00549443⟩

  • Article dans une revue

Effects of ultrathin TiOx seeding layer on crystalline orientation and electrical properties of sputtered (Ba,Sr)TiO3 thin films

L.H. Yang, G.S. Wang, X.L. Dong, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.2136-2139. ⟨10.1111/j.1551-2916.2010.03677.x⟩. ⟨hal-00549507⟩

  • Article dans une revue

0-3 and 1-3 piezo-composites based on single crystal PMN-PT for transducer applications

F. Levassort, Anne-Christine Hladky, H. Le Khanh, L.P. Tran-Huu-Hue, M. Lethiecq, M. Pham Thi

Advances in Applied Ceramics, 2010, 109, pp.162-168. ⟨10.1179/174367509X12472364601075⟩. ⟨hal-00549550⟩

  • Article dans une revue

Two-dimensional simulation of the single-sided air-coupled ultrasonic pitch-catch technique for non-destructive testing

S. Delrue, K. van den Abeele, E. Blomme, J. Deveugele, P. Lust, Olivier Bou Matar

Ultrasonics, 2010, 50, pp.188-196. ⟨10.1016/j.ultras.2009.08.005⟩. ⟨hal-00549561⟩

  • Article dans une revue

Metallographic and numerical studies of the role of catalyst particles of MgH2-Mg system

M. Celino, A. Montone, F. Cleri, A. Aurora, D. Mirabile-Gattia, S. Giusepponi, M. Vittori-Antisari

Defect and Diffusion Forum, 2010, 297-301, pp.263-268. ⟨10.4028/www.scientific.net/DDF.297-301.263⟩. ⟨hal-00549631⟩

  • Article dans une revue

High-speed 1.3-µm p-i-n GaNAsSb/GaAs waveguide photodetector

Malek Zegaoui, Z. Xu, N. Saadsaoud, Kianhuan Tan, Wan Khai Loke, Satrio Wicaksono, Soon Fatt Yoon, Christiane Legrand, Didier Decoster, Jean Chazelas

The authors report the demonstration of high-speed GaNAsSb/GaAs p-i-n waveguide photodetector grown by molecular beam epitaxy technique. A 0.4-μm-thick GaNAsSb core layer with 3.3% of N and 8% of Sb for detection wavelength over 1.3 μm is sandwiched by GaAs and AlGaAs cladding layers. The device…

IEEE Electron Device Letters, 2010, 31 (7), pp.704-706. ⟨10.1109/LED.2010.2049563⟩. ⟨hal-00549006⟩