Publications

• Communication dans un congrès

Atomic scale dopant metrology in an individual silicon nanowire by atom probe tomography

W.H. Chen, Rodrigue Lardé, Emmanuel Cadel, T. Xu, J.P. Nys, B. Grandidier, D. Stiévenard, Philippe Pareige

In this work, the p-type silicon nanowires (SiNWs) are grown by the Chemical Vapor Deposition (CVD) method using gold as catalyst droplet, silane as precursor and diborane as dopant reactant and are analyzed at the atomic scale using the three dimensional laser assisted Atom Probe Tomography (APT…

Nanotechnology 2010 Advanced Materials, CNTs, Particles, Films and Composites - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010, Jun 2010, Anaheim, CA, United States. pp.29-32. ⟨hal-01953261⟩

• Communication dans un congrès

Monocouches organiques auto-assemblées pour application en transistors à effet de champ et switch électrooptique

D. Lmimouni, Marc Ternisien, S. Lenfant, David Guérin, Dominique Vuillaume

PIRM IV : 4e Congrès International Physique des Interactions Rayonnement Matière, Dakhla, MOROCCO, 2010, Dakhla, Maroc. ⟨hal-03954183⟩

• Communication dans un congrès

Improvements of high performance 2-nm-thin InAlN/AlN barrier devices by interface engineering

C. Ostermaier, G. Pozzovivo, J.F. Carlin, B. Basnar, W. Schrenk, A.M. Andrews, Y. Douvry, Christophe Gaquière, Jean-Claude de Jaeger, L. Toth, B. Pecz, M. Gonschorek, E. Feltin, N. Grandjean, G. Strasser, D. Pogany, J. Kuzmik

30th International Conference on the Physics of Semiconductors, ICPS-30, 2010, Seoul, South Korea. pp.905-906, ⟨10.1063/1.3666669⟩. ⟨hal-00800884⟩

• Ouvrages

Les chambres réverbérantes en électromagnétisme

B. Demoulin, P. Besnier

Hermes Science Publication, 422 p., 2010, ISBN 978-2-7462-2592-3. ⟨hal-00800613⟩

• Chapitre d'ouvrage

MEMS acoustiques

Michel Bruneau, Anne-Christine Hladky

Livre blanc de l'acoustique en France en 2010, Société Française d'Acoustique, pp.80, 2010, ISBN 978-2-919340-00-2. ⟨hal-00800615⟩

• Article dans une revue

Characterization of nano-crystalline diamond films grown under continuous DC bias during plasma enhanced chemical vapor deposition

V. Mortet, L. Zhang, M. Eckert, A. Soltani, J. d'Haen, O. Douhéret, M. Moreau, S. Osswald, E. Neyts, David Troadec, P. Wagner, A. Bogaerts, G. van Tendeloo, K. Haenen

Nanocrystalline diamond films have generated much interested due to their diamond-like properties and low surface roughness. Several techniques have been used to obtain a high re-nucleation rate, such as hydrogen poor or high methane concentration plasmas. In this work, the properties of nano-…

MRS Online Proceedings Library, 2010, 1203, pp.J05-03. ⟨10.1557/PROC-1203-J05-03⟩. ⟨hal-00656630⟩

• Article dans une revue

Low-temperature scanning tunneling microscopy study of self-assembled InAs quantum dots grown by droplet epitaxy

Corentin Durand, A. Peilloux, K. Suzuki, K. Kanisawa, B. Grandidier, K. Muraki

Using molecular beam epitaxy, we study self-assembled InAs quantum dots (QDs) grown on GaAs (001) substrates by lowtemperature scanning tunneling microscopy. We compare two different growth processes, the well-known Stranski-Krastanow mode and the more recently studied droplet epitaxy mode. We show…

Physics Procedia, 2010, Proceedings of the 14th International conference on Narrow Gap Semiconductors and Systems, 3 (2), pp.1299-1304. ⟨10.1016/j.phpro.2010.01.180⟩. ⟨hal-00568565⟩

• Article dans une revue

Low-frequency surface plasmon excitations in multicoaxial negative-index metamaterial cables

M.S. Kushwaha, Bahram Djafari-Rouhani

By using an elegant response function theory, which does not require matching of the messy boundary conditions, we investigate the surface plasmon excitations in the multicoaxial cylindrical cables made up of negative-index metamaterials. The multicoaxial cables with dispersive metamaterial…

Journal of the Optical Society of America B, 2010, 27, pp.605-610. ⟨10.1364/JOSAB.27.000605⟩. ⟨hal-00549077⟩

• Article dans une revue

Synthesis and electrical properties of fullerene-based molecular junctions on silicon substrate

David Guérin, S. Lenfant, S. Godey, D. Vuillaume

Journal of Materials Chemistry, 2010, 20, pp.2680-2690. ⟨10.1039/b924255d⟩. ⟨hal-00548971⟩

• Communication dans un congrès

GaN-on-Si HEMTs above 10 W/mm at 2 GHz together with high thermal stability at 325°C

F Medjdoub, D. Marcon, J. Das, J. Derluyn, K. Cheng, S. Degroote, N. Vellas, Christophe Gaquière, Marie Germain, S. Decoutere

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.37-40. ⟨hal-00549996⟩