Publications
Affichage de 9971 à 9980 sur 16256
Graded channel concept for improving RF noise of an industrial 0.15 µm SOI CMOS technology
M. Emam, P. Sakalas, A. Kumar, J. Ida, D. Vanhoenacker-Janvier, J. Raskin, Francois Danneville
5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.170-173. ⟨hal-00549920⟩
Thermal oxidation of lattice matched InAlN/GaN heterostructures
M. Alomari, A. Chuvilin, L. Toth, B. Pecz, J.F. Carlin, N. Grandjean, Christophe Gaquière, M.A. Di Forte-Poisson, S. Delage, E. Kohn
Physica Status Solidi C: Current Topics in Solid State Physics, 2010, 7, pp.13-16. ⟨10.1002/pssc.200982623⟩. ⟨hal-00549908⟩
AlGaN/GaN HEMT on (111) single crystalline diamond
M. Alomari, A. Dussaigne, D. Martin, N. Grandjean, Christophe Gaquière, E. Kohn
Electronics Letters, 2010, 46, pp.299-300. ⟨10.1049/el.2010.2937⟩. ⟨hal-00549443⟩
0-3 and 1-3 piezo-composites based on single crystal PMN-PT for transducer applications
F. Levassort, Anne-Christine Hladky, H. Le Khanh, L.P. Tran-Huu-Hue, M. Lethiecq, M. Pham Thi
Advances in Applied Ceramics, 2010, 109, pp.162-168. ⟨10.1179/174367509X12472364601075⟩. ⟨hal-00549550⟩
Effects of ultrathin TiOx seeding layer on crystalline orientation and electrical properties of sputtered (Ba,Sr)TiO3 thin films
L.H. Yang, G.S. Wang, X.L. Dong, Denis Remiens
Journal of the American Ceramic Society, 2010, 93, pp.2136-2139. ⟨10.1111/j.1551-2916.2010.03677.x⟩. ⟨hal-00549507⟩
Metallographic and numerical studies of the role of catalyst particles of MgH2-Mg system
M. Celino, A. Montone, F. Cleri, A. Aurora, D. Mirabile-Gattia, S. Giusepponi, M. Vittori-Antisari
Defect and Diffusion Forum, 2010, 297-301, pp.263-268. ⟨10.4028/www.scientific.net/DDF.297-301.263⟩. ⟨hal-00549631⟩
60 GHz current gain cut-off frequency graphene nanoribbon FET
N. Meng, F.J. Ferrer, D. Vignaud, Gilles Dambrine, H. Happy
International Journal of Microwave and Wireless Technologies, 2010, 2, pp.441-444. ⟨10.1017/S175907871000070X⟩. ⟨hal-00548564⟩
A 60 GHz power amplifier with 14.5 dBm saturation power and 25% peak PAE in CMOS 65 nm SOI
A. Siligaris, Y. Hamada, C. Mounet, C. Raynaud, B. Martineau, N. Deparis, N. Rolland, M. Fukaishi, P. Vincent
IEEE Journal of Solid-State Circuits, 2010, 45, pp.1286-1294. ⟨10.1109/JSSC.2010.2049456⟩. ⟨hal-00548603⟩
Imperfection-sensitive ductility of aluminium thin films
M. Coulombier, A. Boé, C. Brugger, J.P. Raskin, T. Pardoen
Scripta Materialia, 2010, 62, pp.742-745. ⟨10.1016/j.scriptamat.2010.01.048⟩. ⟨hal-00548611⟩
Diameter dependence of the wurtzite-zinc blende transition in InAs nanowires
J. Johansson, K.A. Dick, P. Caroff, M.E. Messing, J. Bolinsson, K. Deppert, L. Samuelson
Journal of Physical Chemistry C, 2010, 114, pp.3837-3842. ⟨10.1021/jp910821e⟩. ⟨hal-00548709⟩