Publications

Affichage de 9981 à 9990 sur 16075


  • Article dans une revue

MEMS magneto-mechanical microvalves (MMMS) for aerodynamic active flow control

Philippe Pernod, Vladimir Preobrazhensky, A. Merlen, O. Ducloux, Abdelkrim Talbi, L. Gimeno, R. Viard, Nicolas Tiercelin

Journal of Magnetism and Magnetic Materials, 2010, 322, pp.1642-1646. ⟨10.1016/j.jmmm.2009.04.086⟩. ⟨hal-00549558⟩

  • Article dans une revue

Proposal and performance analysis of normally off n++ GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier

J. Kuzmik, C. Ostermaier, G. Pozzovivo, B. Basnar, W. Schrenk, J.F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean, Y. Douvry, Christophe Gaquière, Jean-Claude de Jaeger, K. Cico, K. Frölich, J. Skriniarova, J. Kovacs, G. Strasser, D. Pogany, E. Gornik

IEEE Transactions on Electron Devices, 2010, 57, pp.2144-2154. ⟨10.1109/TED.2010.2055292⟩. ⟨hal-00549465⟩

  • Article dans une revue

Electron beam nanolithography in AZnLOF 2020

E. Herth, P. Tilmant, M. Faucher, M. François, Christophe Boyaval, Francois Vaurette, Y. Deblock, Bernard Legrand, L. Buchaillot

Microelectronic Engineering, 2010, 87, pp.2057-2060. ⟨10.1016/j.mee.2009.12.079⟩. ⟨hal-00548989⟩

  • Article dans une revue

High-speed programming of nanowire-gated carbon-nanotube memory devices

G. Agnus, A. Filoramo, S. Lenfant, D. Vuillaume, J.P. Bourgoin, Vincent Derycke

Small, 2010, 6, pp.2659-2663. ⟨10.1002/smll.201001293⟩. ⟨hal-00548969⟩

  • Article dans une revue

The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors

C. Thelander, K.A. Dick, M.T. Borgström, L.E. Fröberg, P. Caroff, H.A. Nilsson, L. Samuelson

Nanotechnology, 2010, 21, pp.205703-1-9. ⟨10.1088/0957-4484/21/20/205703⟩. ⟨hal-00548956⟩

  • Article dans une revue

RF injection-locking of terahertz quantum cascade lasers

P. Gellie, Jean-Francois Lampin, C. Sirtori, S. Barbieri

Electronics Letters, 2010, 46, pp.S60-S64. ⟨10.1049/el.2010.8393⟩. ⟨hal-00800826⟩

  • Article dans une revue

Thermal noise in MOSFETs : a two- or a three-parameter noise model ?

M. Emam, P. Sakalas, D. Vanhoenacker-Janvier, J.P. Raskin, T.C. Lim, Francois Danneville

IEEE Transactions on Electron Devices, 2010, 57, pp.1188-1191. ⟨10.1109/TED.2010.2044286⟩. ⟨hal-00548567⟩

  • Article dans une revue

Validation of the 2 temperatures noise model using pre-matched transistors in W-band for sub-65 nm technology

N. Waldhoff, Y. Tagro, D. Gloria, F. Gianesello, Francois Danneville, Gilles Dambrine

IEEE Microwave and Wireless Components Letters, 2010, 20, pp.274-276. ⟨10.1109/LMWC.2010.2045588⟩. ⟨hal-00548601⟩