Publicaciones
Affichage de 14661 à 14670 sur 16256
Electronic structure of layer compounds GaSe and InSe in a tight binding approach
M.O.D. Camara, A. Mauger, I. Devos
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 65, pp.125206/1-12. ⟨hal-00149670⟩
Outils théoriques pour la structure électronique
Christophe Delerue, Guy Allan, Michel Lannoo, Christophe Krzeminski, Yann-Michel Niquet
Ecole thématique sur les nitrures, 2002, La Plagne, France. ⟨hal-00149679⟩
Efficient and unusual intraband optical transitions in silicon nanocrystals
Christophe Delerue, Guy Allan
Materials Research Society Fall Meeting, 2002, Boston, MA, United States. ⟨hal-00149680⟩
Theory of silicon nanocrystals
Christophe Delerue, Guy Allan, Michel Lannoo
NATO Advanced Research Workshop : Towards the first silicon laser, 2002, Trento, Italy. ⟨hal-00149682⟩
Etude par EFM des propriétés de charge d'ilots semiconducteurs de taille nanométrique
Thierry Melin, D. Deresmes, D. Stievenard
Forum des microscopies à sonde locale, 2002, Spa, Belgique. ⟨hal-00149683⟩
High-power AlGaN/GaN HEMTs on resistive silicon substrate
Virginie Hoel, N. Vellas, Christophe Gaquière, Jean-Claude de Jaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
Electronics Letters, 2002, 38, pp.750-752. ⟨hal-00149694⟩
S. Carnot’s Réflexions: a theory based on non–classical Logic
Antonino Drago, Raffaele Pisano
Bulletin of Symbolic Logic, 2002, 8 (131), pp.131-132. ⟨hal-04508058⟩
Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density
D. Vignaud, Jean-Francois Lampin, E. Lefebvre, M. Zaknoune, F. Mollot
Applied Physics Letters, 2002, 80, pp.4151. ⟨hal-00018489⟩
Why do (2x4) GaAs and InAs (001) surfaces exposed to phosphorus have so different strain behavior ?
Xavier Wallart, Catherine Priester, D. Deresmes, Thomas Gehin, Francis Mollot
Applied Physics Letters, 2002, 81, pp.1060-1062. ⟨hal-00018491⟩