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Affichage de 13471 à 13480 sur 16256

Communication dans un congrès

Nanomachined electrospray ionisation tips

C. Descatoire, David Troadec, A. Ashcroft, L. Buchaillot, S. Arscott

2005, pp.122-123. ⟨hal-00130658⟩

Communication dans un congrès

Effet du désordre dans un démultiplexeur nanométrique plasmonique

Maxime Beaugeois, Abdellatif Akjouj, Bahram Djafari-Rouhani, Jerome O. Vasseur, Yan Pennec, Mohamed Bouazaoui, Jean-Pierre Vilcot, Sophie Maricot, J.P. Vigneron, L. Dobrzynski

GDR Ondes, 2005, Marseille, France. ⟨hal-00130844⟩

Communication dans un congrès

Monitoring capillary endothelial cell culture and capillary formation in a microdevice by impedance spectroscopy measurements

K. Rissanen, S. Ostrovidov, E. Lennon, V. Senez, J. Kim, B. Kim, K.S. Furukawa, T. Ushida, Y. Sakai, T. Fujii

2005, pp.201-204. ⟨hal-00130852⟩

Communication dans un congrès

3D self-assembling of SU-8 microstructures on silicon by plasma induced compressive stress

Jean-Baptiste Bureau, Bernard Legrand, Dominique Collard, Lionel Buchaillot

This paper presents the development of suspended movable microstructures made of SU-8 photoresist where compressive stress leads to 3D self-assembled microstructures. Internal compressive stress in the photoresist is induced by an SF/sub 6/ based plasma process. Clamped-clamped beam structures have...

13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05., Jun 2005, Seoul, South Korea. pp.19-22, ⟨10.1109/SENSOR.2005.1496348⟩. ⟨hal-00128655⟩

Article dans une revue

Integration of PtSi-based Schottky-barrier p-MOSFETs with a midgap tungsten gate

G. Larrieu, Emmanuel Dubois

This paper demonstrates the successful integration of Schottky barrier (SB) MOSFETs that feature platinum silicide (PtSi) source/drain and a tungsten midgap gate down to a length of 40 nm. SB MOSFETs are shown to steadily progress with respect to conventional highly doped source/drain with a...

IEEE Transactions on Electron Devices, 2005, 52 (12), pp.2720-2726. ⟨10.1109/TED.2005.859703⟩. ⟨hal-00138397⟩

Article dans une revue

CBr4 and Be heavily doped InGaAs grown in a production MBE system

S. Godey, S. Dhellemmes, A. Wilk, M. Zaknoune, F. Mollot

Journal of Crystal Growth, 2005, 278, pp.600-603. ⟨hal-00154907⟩

Communication dans un congrès

Low frequency and linear high frequency noise performances of AlGaN/GaN grown on SiC substrate

Jean-Guy Tartarin, Geoffroy Soubercaze-Pun, Laurent Bary, Christophe Chambon, Sébastien Gribaldo, Olivier Llopis, Laurent Escotte, Robert Plana, S. Delage, Christophe Gaquière, Jacques Graffeuil

2005, pp.277-280. ⟨hal-00154917⟩