Publicaciones

• ART

Molecular interactions of PTCDA on Si(100)

T. Soubiron, Francois Vaurette, J.P. Nys, B. Grandidier, X. Wallart, D. Stievenard

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2005, 581, pp.178-188. ⟨hal-00126421⟩

• COMM

Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates : application to X-band low noise amplifiers

Jean-Claude de Jaeger, S.L. Delage, Gilles Dambrine, M.A. Poisson, Virginie Hoel, Sylvie Lepilliet, B. Grimbert, E. Morvan, Y. Mancuso, G. Gauthier, A. Lefrancois, Y. Cordier

2005, pp.229-232. ⟨hal-00126458⟩

• ART

Ultrasonic cavitation in thin liquid layers

A. Moussatov, C. Granger, Bertrand Dubus

Ultrasonics Sonochemistry, 2005, 12, pp.415-422. ⟨hal-00124472⟩

• ART

Behavior of a common source traveling wave amplifier versus temperature in SOI technology

M. Si Moussa, C. Pavageau, P. Simon, Francois Danneville, J. Russat, N. Fel, J.P. Raskin, D. Vanoenacker-Janvier

EuMA - Journal of the European Microwave Association, 2005, 1, pp.288-292. ⟨hal-00125165⟩

• COMM

Origin and control of spurious Lamb wave resonances in Bulk Acoustic Wave (BAW) resonators

A. Volatier, C. Pigot, P. Ancey, Bertrand Dubus

WCU/UI'05 Joint Conference, 2005, Beijing, China. ⟨hal-00124962⟩

• COMM

High frequency low noise potentialities of down to 65nm technology nodes MOSFETs

Gilles Dambrine, Daniel Gloria, Patrick Scheerer, Christine Raynaud, Francois Danneville, Sylvie Lepilliet, Alexandre Siligaris, Guillaume Pailloncy, Baudouin Martineau, Emmanuel Bouhana, Raphael Valentin

65 nm n-MOSFETs show state-of-the-art cut-off frequency with f t = 210 GHz and microwave low noise and high gain properties (NF min = 0.8 dB and G ass = 17.3 dB at 12 GHz). As compared with the previous nodes, the high frequency properties of these MOSFETs continue to be in agreement with the...

European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005, Oct 2005, Paris, France. pp.97-100. ⟨hal-00125303⟩

• COMM

Ballistic nanodevices for high frequency applications

S. Bollaert

International Conference on Materials for Advanced Technologies, ICMAT 2005, 2005, Singapore, Singapore. ⟨hal-00125313⟩

• COMM

HEMTs for millimeter and sub-millimeter waves applications

S. Bollaert, A. Cappy, Gilles Dambrine, I. Duszynski, Yannick Roelens, A. Shchepetov, X. Wallart, A. Wieszt

GDR THz, 2005, Montpellier, France. ⟨hal-00125314⟩

• COMM

A 40 GHz superheterodyne receiver integrated in 0.13 µm BiCMOS SiGe:C HBT technology

S. Pruvost, I. Telliez, Francois Danneville, Gilles Dambrine, M. Laurens

2005, pp.10-13. ⟨hal-00125902⟩

• COMM

Silicon-molecules-metal junctions by nanotransfer printing : chemical synthesis and electrical properties

David Guérin, C. Merckling, S. Lenfant, D. Vuillaume

8th European Conference on Molecular Electronics, ECME8, 2005, Bologna, Italy. ⟨hal-00125601⟩