Publicaciones

• Communication dans un congrès

Electric force microscopy of individually charged silicon nanoparticles

Thierry Melin, Heinrich Diesinger, Sophie Barbet, D. Deresmes, T. Baron., Didier Stiévenard

We report on charge injection experiments performed on single silicon nanoparticles and their analysis by Electric Force Microscopy (EFM). An analytical model is presented, enabling a quantitative determination of the charge state of the semiconductor nanoparticles from EFM signals, for arbitrary...

Materials Research Society 2005 Fall Meeting, Nov 2005, Boston, MA, United States. ⟨hal-00126439⟩

• Article dans une revue

Benzocyclobutene wafer bonding for III-V nanophotonic guiding structures

D. Lauvernier, Jean-Pierre Vilcot, S. Garidel, S. Mc Murtry, Didier Decoster

Electronics Letters, 2005, 41, pp.1170-1172. ⟨hal-00125663⟩

• Communication dans un congrès

Réalisation de transistors HEMTs AlInAs/GaInAs de 20nm de longueur de grille

I. Duszynski, Nicolas Wichmann, S. Bollaert, X. Wallart, A. Cappy

Actes des 14èmes Journées Nationales Microondes, 2005, Nantes, France. ⟨hal-00126727⟩

• Communication dans un congrès

Technologie, simulation et caractérisation à T=300K de dispositifs balistiques de type GaInAs/AlInAs avec grille de commande

J.S. Galloo, C. Gardes, Z. Teukam, Yannick Roelens, S. Bollaert, X. Wallart, A. Cappy

Actes des 14èmes Journées Nationales Microondes, 2005, Nantes, France. ⟨hal-00126725⟩

• Article dans une revue

Design and optimization of a 1.3/1.55-µm wavelength selective p-i-n photodiode based on multimode diluted waveguide

V. Magnin, L. Giraudet, Joseph Harari, Didier Decoster

IEEE Photonics Technology Letters, 2005, 17, pp.459-461. ⟨hal-00125655⟩

• Communication dans un congrès

High frequency low noise potentialities of down to 65nm technology nodes MOSFETs

Gilles Dambrine, Daniel Gloria, Patrick Scheerer, Christine Raynaud, Francois Danneville, Sylvie Lepilliet, Alexandre Siligaris, Guillaume Pailloncy, Baudouin Martineau, Emmanuel Bouhana, Raphael Valentin

65 nm n-MOSFETs show state-of-the-art cut-off frequency with f t = 210 GHz and microwave low noise and high gain properties (NF min = 0.8 dB and G ass = 17.3 dB at 12 GHz). As compared with the previous nodes, the high frequency properties of these MOSFETs continue to be in agreement with the...

European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005, Oct 2005, Paris, France. pp.97-100. ⟨hal-00125303⟩

• Article dans une revue

Molecular interactions of PTCDA on Si(100)

T. Soubiron, Francois Vaurette, J.P. Nys, B. Grandidier, X. Wallart, D. Stievenard

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2005, 581, pp.178-188. ⟨hal-00126421⟩

• Article dans une revue

Electrodeposited nanocrystalline PbSe quantum wells : synthesis, electrical and optical properties

Zeger Hens, Ernst Stefan Kooij, Guy Allan, B. Grandidier, Daniel Vanmaekelbergh

The synthesis of PbSe nanocrystals by electrodeposition on Au(111) is discussed and it is shown that the characteristics of nucleation and growth determine the electrical and optical properties of the nanocrystals. Electrodeposition of PbSe on gold occurs by a two-dimensional nucleation and growth...

Nanotechnology, 2005, 16, pp.339-343. ⟨10.1088/0957-4484/16/4/001⟩. ⟨hal-00126418⟩

• Communication dans un congrès

HEMTs for millimeter and sub-millimeter waves applications

S. Bollaert, A. Cappy, Gilles Dambrine, I. Duszynski, Yannick Roelens, A. Shchepetov, X. Wallart, A. Wieszt

GDR THz, 2005, Montpellier, France. ⟨hal-00125314⟩

• Communication dans un congrès

Ballistic nanodevices for high frequency applications

S. Bollaert

International Conference on Materials for Advanced Technologies, ICMAT 2005, 2005, Singapore, Singapore. ⟨hal-00125313⟩