Publicaciones

• Article dans une revue

Fabrication of 24-MHz-disk resonators with silicon passive integration technology

M. Sworowski, F. Neuilly, Bernard Legrand, A. Summanwar, P. Philippe, L. Buchaillot

IEEE Electron Device Letters, 2010, 31, pp.23-25. ⟨10.1109/LED.2009.2034542⟩. ⟨hal-00548984⟩

• Article dans une revue

Negative refraction of surface acoustic waves in the subgigahertz range

Bernard Bonello, Laurent Belliard, Juliette Pierre, Jerome O. Vasseur, Bernard Perrin, Olga Boyko-Kazymyrenko

We used the picosecond ultrasonic technique to experimentally demonstrate the negative refraction of surface acoustic waves in a two-dimensional phononic crystal. The sample is made of a square lattice of circular voids drilled at the surface of a thick silica substrate. The lattice parameter is of...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.104109-1-5. ⟨10.1103/PhysRevB.82.104109⟩. ⟨hal-00549435⟩

• Communication dans un congrès

Vers la caractérisation cellulaire par BioMEMS THz

Simon Laurette, A. Treizebre, Nour Eddine Bourzgui, Bertrand Bocquet

13èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2010, Jan 2010, Paris, France. CD-ROM, Session MEMS Lab-on-chip, 1-4. ⟨hal-00573235⟩

• Article dans une revue

Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications

J. Ratajczak, A. Laszcz, A. Czerwinski, J. Katcki, F. Phillipp, P.A. van Aken, N. Reckinger, Emmanuel Dubois

In this paper, we present results of transmission electron microscopy studies on erbium silicide structures fabricated under various thermal conditions. A titanium cap has been used as a protective layer against oxidation during rapid thermal annealing of an erbium layer in a temperature range of...

Journal of Microscopy, 2010, EM 2008 ‐ XIII International Conference on Electron Microscopy, 237 (3), pp.379-383. ⟨10.1111/j.1365-2818.2009.03264.x⟩. ⟨hal-00549623⟩

• Article dans une revue

Time-resolved charge detection and back-action in quantum circuits

T. Ihn, S. Gustavsson, U. Gasser, R. Leturcq, I. Shorubalko, K. Ensslin

Physica E: Low-dimensional Systems and Nanostructures, 2010, 42, pp.803-808. ⟨10.1016/j.physe.2009.11.087⟩. ⟨hal-00568568⟩

• Article dans une revue

Silicon wafer characterisation by laser ultrasonics and neural networks

F. Lefevre, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

Journal of Physics: Conference Series, 2010, 214, pp.012042 -1-5. ⟨10.1088/1742-6596/214/1/012042⟩. ⟨hal-00549913⟩

• Article dans une revue

Growth and electric properties of MPB BiScO3-PbTiO3 thin films on La0.7Sr0.3MnO3-coated silicon substrates

S.A. Zhang, X.L. Dong, Y. Chen, F. Cao, Y.Y. Zhang, G.S. Wang, N. Sama, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.1583-1585. ⟨10.1111/j.1551-2916.2010.03630.x⟩. ⟨hal-00549506⟩

• Article dans une revue

Bottom and top electrodes nature and PZT film thickness influence on electrical properties

N. Sama, Caroline Soyer, Denis Remiens, C. Verrue, R. Bouregba

Sensors and Actuators A: Physical , 2010, 158, pp.99-105. ⟨10.1016/j.sna.2009.11.032⟩. ⟨hal-00549503⟩

• Article dans une revue

Imperfection-sensitive ductility of aluminium thin films

M. Coulombier, A. Boé, C. Brugger, J.P. Raskin, T. Pardoen

Scripta Materialia, 2010, 62, pp.742-745. ⟨10.1016/j.scriptamat.2010.01.048⟩. ⟨hal-00548611⟩

• Article dans une revue

A 60 GHz power amplifier with 14.5 dBm saturation power and 25% peak PAE in CMOS 65 nm SOI

A. Siligaris, Y. Hamada, C. Mounet, C. Raynaud, B. Martineau, N. Deparis, N. Rolland, M. Fukaishi, P. Vincent

IEEE Journal of Solid-State Circuits, 2010, 45, pp.1286-1294. ⟨10.1109/JSSC.2010.2049456⟩. ⟨hal-00548603⟩