Publicaciones
Affichage de 10111 à 10120 sur 16227
Propagation of elastic waves in one-dimensional periodic stubbed waveguides
Anne-Christine Hladky, C. Granger, Jerome O. Vasseur, M. de Billy
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.104307-1-7. ⟨10.1103/PhysRevB.82.104307⟩. ⟨hal-00548561⟩
Microwave performance of InAlAsSb/In0.35Ga0.65Sb/InAlAsSb double heterojunction bipolar transistors
E. Mairiaux, L. Desplanque, X. Wallart, M. Zaknoune
IEEE Electron Device Letters, 2010, 31, pp.299-301. ⟨10.1109/LED.2010.2040241⟩. ⟨hal-00548566⟩
Molecular nanoelectronics [Invited review paper]
D. Vuillaume
Proceedings of the IEEE, 2010, 98, pp.2111-2123. ⟨10.1109/JPROC.2010.2063410⟩. ⟨hal-00548967⟩
Regulation of power amplifiers under VSWR conditions in CMOS 65nm for 60GHz WLAN applications
Jean Gorisse
2010. ⟨hal-00572699⟩
DC electrical performances improvement of AlGaAs/InGaAs PHEMTs by using low thermal neutron radiation dose
Y. Guhel, B. Boudart, Christophe Gaquière, N. Vellas, J.L. Trolet, M. Piccione
Electronics Letters, 2010, 46, pp.650-652. ⟨10.1049/el.2010.0070⟩. ⟨hal-00549454⟩
Characterisation by time-frequency analysis of the EM disturbances produced by railway substations
T. Hammi, S. Baranowski, H. Ouaddi, G. Nottet, V. Deniau, J. Rioult
9th International Symposium on EMC joint with 20th International Wroclaw Symposium on EMC, EMC Europe 2010, 2010, Poland. pp.826-831. ⟨hal-00568651⟩
MIMO cross-layer design for ad-hoc networks
W.F. Mao, W. Hamouda, Iyad Dayoub
IEEE Global Telecommunications Conference, GLOBECOM 2010, 2010, United States. pp.1-5, ⟨10.1109/GLOCOM.2010.5683276⟩. ⟨hal-00568619⟩
Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs
J. Kuzmik, C. Ostermaier, G. Pozzovivo, B. Basnar, W. Schrenk, J.F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean, Y. Douvry, Christophe Gaquière, Jean-Claude de Jaeger, G. Strasser, D. Pogany, E. Gornik
8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.163-166, ⟨10.1109/ASDAM.2010.5666325⟩. ⟨hal-00550008⟩
GaN-on-Si HEMTs above 10 W/mm at 2 GHz together with high thermal stability at 325°C
F Medjdoub, D. Marcon, J. Das, J. Derluyn, K. Cheng, S. Degroote, N. Vellas, Christophe Gaquière, Marie Germain, S. Decoutere
5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.37-40. ⟨hal-00549996⟩