Publicaciones

• Article dans une revue

Microwave modulation of terahertz quantum cascade lasers : a transmission-line approach

Wilfried Maineult, Lu Ding, Pierre Gellie, Pascal Filloux, Carlo Sirtori, Stefano Barbieri, Tahsin Akalin, Jean-Francois Lampin, Isabelle Sagnes, Harvey E. Beere, David Ritchie

We report on microwave impedance measurements of metal-metal ridge-waveguide terahertz quantum cascade lasers. Experimental data, recorded at 4 K in the 100 MHz–55 GHz range, are well reproduced by distributed-parameter transmission-line simulations, showing that the modulation cutoff is limited by...

Applied Physics Letters, 2010, 96, pp.021108-1-3. ⟨10.1063/1.3284518⟩. ⟨hal-00548728⟩

• Chapitre d'ouvrage

Microstub resonators based-waveguides for filtering and multiplexing devices

Yan Pennec, Bahram Djafari-Rouhani, Abdellatif Akjouj, Jerome O. Vasseur, A. Noual, L. Dobrzynski

In this chapter, we report numerical simulations, based on a two dimensions Finite Difference Time Domain (FDTD) method, of light propagation in two-dimensional semiconductor micro optical waveguides coupled to one or several lateral stubs. This resonator offers a filtering alternative to well-...

Progress in Optical Fibers Research, Nova Science Publishers, Inc., pp.83-105, 2010, 9781606924778. ⟨hal-03526132⟩

• Article dans une revue

Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

S.R. Plissard, K.A. Dick, X. Wallart, P. Caroff

Applied Physics Letters, 2010, 96, pp.121901-1-3. ⟨10.1063/1.3367746⟩. ⟨hal-00548716⟩

• Article dans une revue

Graphene growth by molecular beam epitaxy on the carbon-face of SiC

E. Moreau, S. Godey, F.J. Ferrer, D. Vignaud, X. Wallart, J. Avila, M.C. Asensio, F. Bournel, J.J. Gallet

Graphene layers have been grown by molecular beam epitaxy (MBE) on the (0001¯) C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of SiC...

Applied Physics Letters, 2010, 97 (24), pp.241907. ⟨10.1063/1.3526720⟩. ⟨hal-00548720⟩

• Communication dans un congrès

Pulse shaping with width randomisation for IR-UWB signal

K. Kouakou, Laurent Clavier, D. Issa, P.A. Rolland

3rd European Wireless Technology Conference, EuWiT 2010, 2010, France. pp.157-160. ⟨hal-00549930⟩

• Article dans une revue

High-speed programming of nanowire-gated carbon-nanotube memory devices

G. Agnus, A. Filoramo, S. Lenfant, D. Vuillaume, J.P. Bourgoin, Vincent Derycke

Small, 2010, 6, pp.2659-2663. ⟨10.1002/smll.201001293⟩. ⟨hal-00548969⟩

• Proceedings/Recueil des communications

On the birth of Electromagnetic theory. Faraday and Maxwell

Raffaele Pisano

The Circulation of Science and Technology. Proceedings of the 4th ESHS Conference European Society for the History of Science, University of Barcelona Press, pp.514-515, 2010, 978-84-9965-108-8. ⟨hal-04515840⟩

• Article dans une revue

A three-dimensional Monte Carlo model for the simulation of nanoelectronic devices

T. Sadi, Jean-Luc Thobel

We present a three-dimensional (3D) semi-classical ensemble Monte Carlo model newly developed to simulate a variety of nanoelectronic devices. The characteristics of the 3D model are compared with the widely used two-dimensional (2D) models. The advantages of our model, in terms of accuracy in...

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2010, 23, pp.200-214. ⟨10.1002/jnm.735⟩. ⟨hal-00549480⟩

• Article dans une revue

Proposal and performance analysis of normally off n++ GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier

J. Kuzmik, C. Ostermaier, G. Pozzovivo, B. Basnar, W. Schrenk, J.F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean, Y. Douvry, Christophe Gaquière, Jean-Claude de Jaeger, K. Cico, K. Frölich, J. Skriniarova, J. Kovacs, G. Strasser, D. Pogany, E. Gornik

IEEE Transactions on Electron Devices, 2010, 57, pp.2144-2154. ⟨10.1109/TED.2010.2055292⟩. ⟨hal-00549465⟩

• Article dans une revue

Monte Carlo study of the dynamic performance of a 100-nm-gate InAlAs/InGaAs velocity modulation transistor

B.G. Vasallo, Nicolas Wichmann, S. Bollaert, Yannick Roelens, A. Cappy, T. Gonzalez, D. Pardo, J. Mateos

IEEE Transactions on Electron Devices, 2010, 57, pp.2572-2578. ⟨10.1109/TED.2010.2058633⟩. ⟨hal-00567883⟩