Publicaciones

Affichage de 10361 à 10370 sur 16059


  • COMM

A High Mobility Field-Effect Transistor as an Antenna for sub-THz Radiation

Maciej Sakowicz, Jerzy Łusakowski, Krzysztof Karpierz, Marian Grynberg, Wojciech Gwarek, Stephane Boubanga Tombet, Dominique Coquillat, Wojciech Knap, Andrey Shchepetov, S. Bollaert

The experiments on radiation coupling to field effect transistors working as terahertz radiation detectors are reported. Two types of high electron mobility transistors: InGaAs/InAlAs and GaAs/AlGaAs, with different layout geometries are studied. We show that terahertz radiation coupling efficiency...

29th International Conference on Physics of Semiconductors, ICPS-29, Jul 2008, Rio de Janeiro, Brazil. pp.503-504, ⟨10.1063/1.3295528⟩. ⟨hal-00545966⟩

  • ART

Deep level investigation by capacitance and conductance transient spectroscopy in AlGaN/GaN/SiC HEMTs

M. Gassoumi, B. Grimbert, M.A. Poisson, Julien Fontaine, M.A. Zaidi, Christophe Gaquière, H. Maaref

Journal of Optoelectronics and Advanced Materials, 2009, 11, pp.1713-1717. ⟨hal-00473671⟩

  • COMM

Comparison of two coding techniques dedicated to UWB V2V communication system

Yassin El Hillali, Raja Elassali, Fouzia Boukour, A. El Abed, Atika Rivenq

9th International Conference on Intelligent Transport Systems Telecommunications, ITST 2009, 2009, France. pp.673-676, ⟨10.1109/ITST.2009.5399273⟩. ⟨hal-00474137⟩

  • COMM

Millimeter wave ultra wide band short range radar localization accuracy

N. Obeid, M. Heddebaut, Fouzia Boukour, Christophe Loyez, N. Rolland

IEEE 69th Vehicular Technology Conference, VTC Spring 2009, 2009, Spain. pp.2170-2174, ⟨10.1109/VETECS.2009.5073669⟩. ⟨hal-00474172⟩

  • ART

12 GHz F-max GaN/AlN/AlGaN nanowire MISFET

S. Vandenbrouck, K. Madjour, D. Theron, Y.J. Dong, Y. Li, C.M. Lieber, Christophe Gaquière

IEEE Electron Device Letters, 2009, 30, pp.322-324. ⟨10.1109/LED.2009.2014791⟩. ⟨hal-00473429⟩

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Short- and long-range sensing using plasmonic nanostrucures : experimental and theoretical studies

E. Galopin, A. Noual, J. Niedziolka-Jonsson, M. Jonsson-Nedziolka, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani, Rabah Boukherroub, Sabine Szunerits

Journal of Physical Chemistry C, 2009, 113, pp.15921-15927. ⟨10.1021/jp905154z⟩. ⟨hal-00473362⟩

  • COMM

Investigaton on fabrication of GaAsSb/InP UTC-PD based photomixer operating at 1.55 µm wavelengths

Alexandre Beck, Olivier Offranc, Mohammed Zaknoune, Emilien Peytavit, Guillaume Ducournau, Tahsin Akalin, X. Wallart, Jean-Francois Lampin

We report our investigation on realization of 1.55 mum wavelengths sensitive photomixer based on GaAsSb/InP uni-travelling-carrier photodiode. The epitaxial structure and technological steps are described.

34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009, Sep 2009, Busan, South Korea. pp.1-2, ⟨10.1109/ICIMW.2009.5324658⟩. ⟨hal-00474427⟩

  • COMM

Microwave power performance on AlGaN/GaN HEMTs on composite substrate

Jean-Claude de Jaeger, Virginie Hoel, N. Defrance, Y. Douvry, Christophe Gaquière, M.A. Poisson, J. Thorpe, H. Lahreche, R. Langer

4th European Microwave Integrated Circuits Conference, EuMIC 2009, 2009, Italy. pp.144-147. ⟨hal-00474461⟩