Publicaciones

• ART

A simple method for measuring Si-Fin sidewall roughness by AFM

X.H. Tang, V. Bayot, N. Reckinger, D. Flandre, J.P. Raskin, Emmanuel Dubois, B. Nysten

The gate oxide reliability and the electrical behavior of FinFETs are directly related to the surface characteristics of the fin vertical sidewalls. The surface roughness of the fin sidewalls is one of the most important structural parameters to be monitoredin order to optimize the fin patterning...

IEEE Transactions on Nanotechnology, 2009, 8, pp.611-616. ⟨10.1109/TNANO.2009.2021064⟩. ⟨hal-00471972⟩

• ART

Deep level investigation by capacitance and conductance transient spectroscopy in AlGaN/GaN/SiC HEMTs

M. Gassoumi, B. Grimbert, M.A. Poisson, Julien Fontaine, M.A. Zaidi, Christophe Gaquière, H. Maaref

Journal of Optoelectronics and Advanced Materials, 2009, 11, pp.1713-1717. ⟨hal-00473671⟩

• COMM

Multimode transmitters with ΔΣ-based all-digital RF signal generation

A. Frappe, A. Flament, B. Stefanelli, A. Kaiser

18th Workshop on Advances in Analog Circuit Design, AACD 2009, 2009, Lund, Sweden. ⟨hal-00575268⟩

• COMM

Optimisation de la bande passante d'un détecteur acousto-optique

N. Ouail, Michel Pommeray, Jean-Claude Kastelik, Samuel Dupont

Horizons de l'Optique, OPTIQUE Lille 2009, 2009, Villeneuve d'Ascq, France. ⟨hal-00575295⟩

• COMM

Acoustic waves in layered media : comparative study of Raman scattering and reflection delay time

E.H. El Boudouti, R. Zelmat, Y. El Hassouani, R. Bailich, Bahram Djafari-Rouhani

15th International Conference on Photoacoustic and Photothermal Phenomena, ICPPP15, 2009, Leuven, Belgium. ⟨hal-00575398⟩

• COMM

Observation of the 'lobe structure' in the ballistic interferometers

Y. Yamauchi, M. Hashisaka, S. Nakamura, K. Chida, S. Kasai, T. Ono, R. Leturcq, K. Ensslin, D.C. Driscoll, A.C. Gossard, K. Kobayashi

18th International Conference on Electronic Properties of Two-Dimensional Systems, EP2DS-18, 2009, Kobe, Japan. ⟨hal-00575422⟩

• COMM

Magnetotransport in InAs nanowires grown by molecular beam epitaxy

Renaud Leturcq, J. Daymard, Didier Stiévenard, Philippe Caroff, Christophe Coinon, X. Wallart

4ème Workshop Annuel du GDR Nanofils Nanotubes Semiconducteurs, 2009, Autrans, France. ⟨hal-00575342⟩

• COMM

Ab-initio calculation of the phonon dispersion relations of lead chalcogenides

Ludger Wirtz, Ondrej Kilian, Guy Allan

14th International Workshop on Computational Physics and Materials Science : Total Energy and Force Methods, 2009, Trieste, Italy. ⟨hal-00575360⟩

• COMM

Atomic scale structure of <111>-oriented Si nanowire

T. Xu

• COMM

Interface states characterization by an admittance spectroscopy technique in pentacene MIS capacitors

C. Petit, D. Zander, K. Lmimouni, M. Ternisien, S. Lenfant, D. Vuillaume

10th European Conference on Molecular Electronics, ECME 2009, 2009, Copenhagen, Denmark. ⟨hal-00574933⟩